2SD1275A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949/949A ・High DC current gain ・High-speed switching APPLICATIONS ・For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SD1275 VCBO Collector-base voltage 2SD1275A Collector-emitter voltage Emitter-base voltage Collector current Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ 2SD1275 Open base 2SD1275A Open collector 80 5 2 4 35 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT VCEO VEBO IC ICM Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER 2SD1275 IC=30mA , IB=0 2SD1275A VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage 2SD1275 2SD1275A Collector ICEO cut-off current IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency 2SD1275A VCE=40V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=2A ; VCE=4V IC=0.5A; VCE=10V;f=1MHz 2SD1275 IC=2A; IB=8mA VCE=4V; IC=2A VCB=60V; IE=0 CONDITIONS 2SD1275 2SD1275A MIN 60 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage V 80 2.5 2.8 V V ICBO Collector cut-off current 1.0 VCB=80V; IE=0 VCE=30V; IB=0 2.0 mA mA 2.0 1000 2000 20 10000 mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V 0.5 4.0 1.0 μs μs μs hFE-2 Classifications Q 2000-5000 R 4000-10000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1275 2SD1275A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3