SD1275

SD1275 RF & MICROWAVE TRANSISTORS V HF MOBILE APPLICATIONS . . . . 160 MHz 13.6 VOLTS COMMON EMITTER P OUT = 40 W MIN. WITH 9.0 dB GAIN .380 4L STUD (M135) epoxy sealed ORDER CODE SD1275 BRANDING SD1275 PIN CONNECTION DESCRIPTION The SD1275 is a 13.6 V Class C epitaxial silicon NPN planar transistor designed primarily for VHF communications. The SD1275 utilizes an emitter ballasted die geometry to withstand severe load mismatch conditions. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C) Symbol Parameter 1. Collector 2. Base 3. Emitter 4. Base Value Unit VCBO VCEO VCES VEBO IC PDISS TJ T STG Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature 36 16 36 4.0 8.0 70 +200 − 65 to +150 V V V V A W °C °C °C/W 1/4 THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance June 1993 1.2 SD1275 E LECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCES BVCEO BVEBO I CBO hFE IC = 15mA IC = 50mA IE = 5mA VCB = 15V VCE = 5V VBE = 0mA IB = 0mA IC = 0mA IE = 0mA IC = 250mA 36 16 4.0 — 20 — — — — — — — — 5 — V V V mA — DYNAMIC Symbol Test Conditions Value Min. Typ. Max. Unit POUT GP COB f = 160 MHz f = 160 MHz f = 1 MHz PIN = 5.0 W PIN = 5.0 W VCB = 15 V VCE = 13.6 V VCE = 13.6 V 40 9 — — — 95 — — — W dB pF TYPICAL PERFORMANCE POWER GAIN vs FREQUENCY POWER OUTPUT vs POWER INPUT 2/4 SD1275 TYPICAL PERFORMANCE (cont’d) POWER OUTPUT vs SUPPLY VOLTAGE (175 MHz) POWER OUTPUT vs SUPPLY VOLTAGE (145 MHz) POWER OUTPUT vs SUPPLY VOLTAGE (160 MHz) I MPEDANCE DATA FREQ. 160 MHz PIN = 3.0 W VCE = 12.5 V ZIN (Ω) 1.0 + j 0.4 Z CL (Ω) 2.3 + j 0.1 3/4 SD1275 P ACKAGE MECHANICAL DATA Ref.: Dwg. No.12-0135 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 4/4