2SD1275A

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A DESCRIPTION ・With TO-220Fa package ・Complement to type 2SB949,2SB949A ・High forward current transfer ratio hFE ・High-speed switching APPLICATIONS ・For power amplification PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ABSOLUTE MAXIMUM RATINGS AT Tc=25℃ SYMBOL VCBO PARAMETER 2SD1275 Collector-base voltage 2SD1275A 2SD1275 VCEO Collector-emitter voltage 2SD1275A VEBO IC ICM Emitter-base voltage Collector current (DC) Collector current-Peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open collector Open base 80 5 2 4 35 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO PARAMETER Collector-emitter breakdown voltage 2SD1275 IC=30mA , IB=0 2SD1275A IC=2A; IB=8mA VCE=4V; IC=2A 2SD1275 ICBO Collector cut-off current 2SD1275A 2SD1275 ICEO Collector cut-off current 2SD1275A IEBO hFE-1 hFE-2 fT Emitter cut-off current DC current gain DC current gain Transition frequency VCE=40V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=4V IC=2A ; VCE=4V IC=0.5A; VCE=10V;f=1MHz 1000 2000 20 10000 MHz 2 mA VCB=80V; IE=0 VCE=30V; IB=0 2 mA VCB=60V; IE=0 1 mA 80 2.5 2.8 V V CONDITIONS MIN 60 V TYP. MAX UNIT VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage Switching times ton ts tf Turn-on time Storage time Fall time IC=2A ;IB1=8mA IB2=-8mA;VCC=50V 0.5 4 1 μs μs μs hFE-2 Classifications Q 2000-5000 R 4000-10000 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors 2SD1275 2SD1275A PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) JMnic