Power Transistors
2SD1895
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1255
Unit: mm
15.0±0.3 11.0±0.2 5.0±0.2 3.2
s Features
q q q q
16.2±0.5 12.5 3.5 Solder Dip
Optimum for 90W HiFi output High foward current transfer ratio hFE: 5000 to 30000 Low collector to emitter saturation voltage VCE(sat):
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