1 | PMV30UN2R | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.2A;功率(Pd):490mW;5W;导通电阻(RDS(on)@Vgs,Id):32mΩ@4.... | 下载 | Rubycon Corporation |
2 | PBHV8118T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):180V;集电极电流(Ic):1A;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):50@500mA... | 下载 | Rubycon Corporation |
3 | PBSS5220T,215 | 晶体管类型:PNP;集射极击穿电压(Vceo):20V;集电极电流(Ic):2A;功率(Pd):480mW;直流电流增益(hFE@Ic,Vce):200@1A,2V... | 下载 | Rubycon Corporation |
4 | PBSS4160TVL | 晶体管类型:NPN;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):400mW;直流电流增益(hFE@Ic,Vce):250@1mA,5... | 下载 | Rubycon Corporation |
5 | PMV15ENEAR | 类型:N沟道;漏源电压(Vdss):30V;连续漏极电流(Id):6.2A;功率(Pd):700mW;8.3W;导通电阻(RDS(on)@Vgs,Id):20mΩ@... | 下载 | Rubycon Corporation |
6 | PMV20XNEAR | 类型:N沟道;漏源电压(Vdss):20V;连续漏极电流(Id):6.3A;功率(Pd):460mW;6.94W;导通电阻(RDS(on)@Vgs,Id):20mΩ... | 下载 | Rubycon Corporation |
7 | PMBT5551,235 | 晶体管类型:NPN;集射极击穿电压(Vceo):160V;集电极电流(Ic):300mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):80@10... | 下载 | Rubycon Corporation |
8 | PBHV8115T,215 | 晶体管类型:NPN;集射极击穿电压(Vceo):150V;集电极电流(Ic):1A;功率(Pd):300mW;直流电流增益(hFE@Ic,Vce):50@500mA... | 下载 | Rubycon Corporation |
9 | PMV65XPEA | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;... | 下载 | Rubycon Corporation |
10 | PMV65XPEAR | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):2.8A;功率(Pd):480mW;6.25W;导通电阻(RDS(on)@Vgs,Id):78mΩ... | 下载 | Rubycon Corporation |
11 | PMBT2222A,235 | 晶体管类型:NPN;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
12 | PMBT4403,235 | 晶体管类型:PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):600mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@15... | 下载 | Rubycon Corporation |
13 | PMBTA06,235 | 晶体管类型:NPN;集射极击穿电压(Vceo):80V;集电极电流(Ic):500mA;功率(Pd):250mW;直流电流增益(hFE@Ic,Vce):100@10... | 下载 | Rubycon Corporation |
14 | PMN280ENEAX | 类型:N沟道;漏源电压(Vdss):100V;连续漏极电流(Id):1.2A;功率(Pd):667mW;7.5W;导通电阻(RDS(on)@Vgs,Id):385m... | 下载 | Rubycon Corporation |
15 | PMN48XP,115 | 类型:P沟道;漏源电压(Vdss):20V;连续漏极电流(Id):4.1A;功率(Pd):530mW;6.25W;导通电阻(RDS(on)@Vgs,Id):55mΩ... | 下载 | Rubycon Corporation |
16 | PBLS6003D,115 | 晶体管类型:PNP - 预偏压;集电极电流Ic:700mA,100mA;集射极击穿电压Vce:60V,50V;额定功率:400mW; | 下载 | Rubycon Corporation |
17 | PBSS4160DS,115 | 晶体管类型:2个NPN;集射极击穿电压(Vceo):60V;集电极电流(Ic):1A;功率(Pd):560mW;集电极截止电流(Icbo):100nA;集电极-发射... | 下载 | Rubycon Corporation |
18 | PMD3001D,115 | | 下载 | Rubycon Corporation |
19 | PIMT1,115 | 晶体管类型:2个PNP;集射极击穿电压(Vceo):40V;集电极电流(Ic):100mA;功率(Pd):600mW;集电极截止电流(Icbo):100nA;集电极... | 下载 | Rubycon Corporation |
20 | PMN30ENEAX | 类型:-;漏源电压(Vdss):-;连续漏极电流(Id):-;功率(Pd):-;导通电阻(RDS(on)@Vgs,Id):-;阈值电压(Vgs(th)@Id):-;... | 下载 | Rubycon Corporation |