2SK2590

2SK2590 Silicon N Channel MOS FET REJ03G1021-0300 (Previous: ADE-208-1365A) Rev.3.00 Sep 07, 2005 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator, DC-DC converter, motor control Outline RENESAS Package code: PRSS0004AC-A (Package name: TO-220AB) D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Rev.3.00 Sep 07, 2005 page 1 of 6 2SK2590 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Tch Tstg Ratings 200 ±20 7 28 7 50 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body Body to drain diode reverse recovery time Note: 3. Pulse Test Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) |yfs| Ciss Coss Coss Crss td(on) d(on) tr td(off) tf VDF trr Min 200 ±20 — — 2.0 — 3.0 3.0 — — — — — — — — — Typ — — — — — 0.33 4.5 700 260 45 20 45 50 35 1.1 150 Max — — ±10 250 4.0 0.45 — — — — — — — — — — Unit Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns Test Conditions ID = 10 mA, VGS = 0 IG = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS =160 V, VGS = 0 ID = 1 mA, VDS = 10 V ID = 4 A, VGS = 10 V*1 ID = 4 A, VDS = 10 V*1 VDS = 10 V, VGS = 0, f = 1 MHz ID = 4 A, VGS = 10 V, RL = 7.5 Ω IF = 7 A, VGS = 0 IF = 7 A, VGS = 0, diF / dt = 100 A / µs Rev.3.00 Sep 07, 2005 page 2 of 6 2SK2590 Main Characteristics Power vs. Temperature Derating 80 50 30 Maximum Safe Operation Area 10 Channel Dissipation Pch (W) 10 µs Drain Current ID (A) 60 10 D C PW pe O 0 µs = 1 m s 10 3 m s 40 (1 Operation in 1 this area is limited by RDS(on) Sh ra tio n (T ot ) c = 25 20 0.3 0.1 0.05 °C ) Ta = 25°C 1 3 10 30 100 300 1000 0 50 100 150 200 Case Temperature TC (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 10 V 6V 5.5 V Pulse Test 8 Typical Transfer Characteristics Drain Current ID (A) 8 6 4 2 Drain Current ID (A) Pulse Test VDS = 10 V 5V 4.5 V 6 4 75°C 2 Tc = 25°C 2 4 6 –25°C 4V VGS = 3.5 V 0 4 8 12 16 20 0 8 10 Drain to Source Voltage VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage VDS (on) (V) 2.0 5A Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Drain Current 10 5 Pulse Test 1.6 Static Drain to Source on State Resistance RDS (on) (Ω) 1.2 0.8 Pulse Test 2 VGS = 10 V 1 0.5 2A 15 V 0.4 ID = 1 A 0.2 0.1 0.5 0 4 8 12 16 20 1 2 5 10 20 50 Gate to Source Voltage VGS (V) Drain Current ID (A) Rev.3.00 Sep 07, 2005 page 3 of 6 2SK2590 Static Drain to Source on State Resistance vs. Temperature 1.0 0.8 0.6 0.4 0.2 0 –40 Pulse Test Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance yfs (S) 50 VDS = 10 V Pulse Test 20 10 5 ID = 5 A Tc = 25°C –25°C 75°C 1 A, 2 A 2 1 0.5 0.1 0 40 80 120 160 0.2 0.5 1 2 5 10 Case Temperature TC (°C) Body to Drain Diode Reverse Recovery Time 500 1000 Drain Current ID (A) Typical Capacitance vs. vs. Drain to Source Voltage Reverse Recovery Time trr (ns) Ciss Capacitance C (pF) 200 100 50 20 10 5 0.2 di/dt = 100 A/ µs, VGS = 0 Ta = 25°C 100 Coss 10 VGS = 0 f = 1 MHz 1 Crss 0.5 1 2 5 10 20 0 10 20 30 40 50 Reverse Drain Current IDR (A) Drain to Source Voltage VDS (V) Dynamic Input Characteristics Drain to Source Voltage VDS (V) VGS VDD = 150 V 100 V 50 V Switching Characteristics Gate to Source Voltage VGS (V) 20 500 VGS = 10 V, VDD = 30 V PW = 2 µs, duty < 1% = • • 500 Switching Time t (ns) 400 16 200 100 50 tf 300 ID = 7 A VDS VDD = 150 V 100 V 50 V 8 16 24 32 12 td(off) 200 100 8 4 20 10 5 td(on) tr 0 0 40 0.1 0.2 0.5 1 2 5 10 Gate Charge Qg (nc) Drain Current ID (A) Rev.3.00 Sep 07, 2005 page 4 of 6 2SK2590 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 VGS = 10 V 4 0, –5 V 2 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 1.0 D=1 0.5 0.3 0.1 0.2 0.1 0.05 0.02 ul 1 0.0 hot P 1S se TC = 25°C 0.03 θch–c (t) = γs (t) • θch–c θch–c = 2.5°C/W, TC = 25°C PDM D =PW T PW T 1m 10 m 100 m 1 10 0.01 10 µ 100 µ Pulse Width PW (s) Switching Time Test Circuit Vin Monitor Vout Monitor D.U.T. RL Vout Vin 10 V 50 Ω VDD . = 30 V . Vin 10% 10% Waveforms 90% 10% 90% td (off) 90% td (on) tr tf Rev.3.00 Sep 07, 2005 page 5 of 6 2SK2590 Package Dimensions JEITA Package Code SC-46 RENESAS Code PRSS0004AC-A Package Name TO-220AB / TO-220ABV MASS[Typ.] 1.8g Unit: mm 11.5 Max 2.79 ± 0.2 10.16 ± 0.2 9.5 8.0 φ 3.6 +0.2 –0.1 +0.1 –0.08 4.44 ± 0.2 1.26 ± 0.15 6.4 18.5 ± 0.5 15.0 ± 0.3 1.27 2.7 Max 7.8 ± 0.5 0.76 ± 0.1 14.0 ± 0.5 1.5 Max 2.54 ± 0.5 2.54 ± 0.5 0.5 ± 0.1 Ordering Information Part Name 2SK2590-E Quantity 500 pcs Box (Sack) Shipping Container Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. production Rev.3.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Keep safety first in your circuit designs! Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's Technology application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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