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840001AK-34LF

840001AK-34LF

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    VFQFN-16

  • 描述:

    IC FREQ SYNTHESIZER 16-VFQFPN

  • 数据手册
  • 价格&库存
840001AK-34LF 数据手册
FemtoClocks™ Crystal-to-LVCMOS/LVTTL Frequency 840001-34 DATASHEET General Description Features The 840001-34 is a two output LVCMOS/LVTTL Synthesizer. One output is the LVCMOS/LVTTL main synthesized clock output (Q) and one output is a three-state LVCMOS/LVTTL reference clock (REF_OUT) output at the frequency of the crystal oscillator. The device can accept crystals from 15.3125MHz to 42.67MHz and can synthesize outputs from 81.67MHz to 213.33MHz. The 840001-34 is packaged in a 3mm x 3mm 16-pin VFQFN, making it ideal for use on space constrained boards.. • Two LVCMOS/LVTTL outputs, 22 typical output impedance One main clock output (Q) One three-state reference clock output (REF_OUT) • Crystal oscillator interface can accept crystals from 15.3125MHz to 42.67MHz, 18pF parallel resonant crystal • • • • • • Q output frequency range: 81.67MHz to 213.33MHz RMS phase jitter @106.25, (637kHz – 10MHz): 0.38ps (typical) VCO range: 490MHz to 640MHz Full 3.3V and 2.5V operating supply 0°C to 70°C ambient operating temperature Available in lead-free (RoHS 6) package Common Application Configuration Table Inputs Crystal (MHz) M Divider VCO (MHz) N Divider Output Frequency (MHz) 40 15 600 6 100 (default) 26.5625 24 637.5 6 106.25 40 15 600 4 150 26.5625 24 637.5 3 212.5 25 25 625 5 125 25 25 625 4 156.25 10 Gigabit Ethernet 22.5 25 562.5 3 187.5 12 Gigabit Ethernet 19.44 32 622.08 4 155.52 SONET Block Diagram Serial Attached (SCSI), PCI Express, Processor Clock Fibre Channel Serial ATA (SATA), Processor Clock Fibre Channel 2 Ethernet OE 1 VCO 490MHz - 640MHz M-Div 11 = ÷15 (default) 10 = ÷24 01 = ÷25 00 = ÷32 M1 2 11 VDDO XTAL_OUT 3 10 GND XTAL_IN Q M0 4 9 VDD 5 6 7 8 N1 XTAL_OUT Phase Detector N0 OSC 16 15 14 13 12 Q nc XTAL_IN N-Div 00 = ÷3 01 = ÷4 10 = ÷5 11 = ÷6 (default) nc VDDA REF_OUT nc (Pullup) REF_OUT Pin Assignment M1 OE Application 840001-34 16 Lead VFQFN 3mm x 3mm x 0.95 package body K Package Top View (Pullup) M0 (Pullup) N1 (Pullup) N0 (Pullup) 840001-34 Rev A 3/30/15 1 ©2015 Integrated Device Technology, Inc. 840001-34 DATASHEET Table 1. Pin Descriptions Number Name Type 1 OE Input 2, 3 XTAL_IN, XTAL_OUT Input Description Pullup Output enable pin. When HIGH, REF_OUT output is enabled. When LOW, forces REF_OUT to Hi-Z state. See Table 3A. LVCMOS/LVTTL interface levels. Crystal oscillator interface. XTAL_IN is the input. XTAL_OUT is the output. 4, 5 M0, M1 Input 6, 14, 15 nc Unused Pullup M divider inputs. LVCMOS/LVTTL interface levels. See Table 3B. 7, 8 N0, N1 Input 9 VDD Power Core supply pin. 10 GND Power Power supply ground. 11 VDDO Power Output supply pin. 12 Q Output Single-ended clock output. 22 typical output impedance. LVCMOS/LVTTL interface levels. 13 REF_OUT Output Single-ended three-state reference clock output. 22 typical output impedance. LVCMOS/LVTTL interface levels. 16 VDDA Power Analog supply pin. No connect. Pullup Determines output divider value as defined in Table 3C. LVCMOS/LVTTL interface levels. NOTE: Pullup refers to intenal input resistors. See Table 2, Pin Characteristics, for typical values. Table 2. Pin Characteristics Symbol Parameter CIN Input Capacitance CPD Power Dissipation Capacitance RPULLUP Input Pullup Resistor ROUT Output Impedance Rev A 3/30/15 Test Conditions Minimum Typical Maximum Units 4 pF VDD, VDDO = 3.465V 8 pF VDD, VDDO = 2.625V 6 pF 51 k VDD, VDDO = 3.3V±5% 14 22 30  VDD, VDDO = 2.5V±5% 16 26 36  2 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Table 3A. Control Input Function Table Control Input Output OE REF_OUT 0 Hi-Z 1 Active (default) Table 3B. M Divider Function Table Control Inputs M1 M0 Feedback Divider Ratio 0 0 ÷32 0 1 ÷25 1 0 ÷24 1 1 ÷15 (default) Table 3C. N Divider Function Table Control Inputs N1 N0 Output Divider Ratio 0 0 ÷3 0 1 ÷4 1 0 ÷5 1 1 ÷6 (default) Rev A 3/30/15 3 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Absolute Maximum Ratings NOTE: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characterisitcs is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Item Rating Supply Voltage, VDD 4.6V Inputs, VI -0.5V to VDD + 0.5V Outputs,VO -0.5V to VDD + 0.5V Package Thermal Impedance, JA 76.1C/W (0 mps) Storage Temperature, TSTG -65C to 150C DC Electrical Characteristics Table 4A. Power Supply DC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = 0°C to 70°C Symbol Parameter VDD Test Conditions Minimum Typical Maximum Units Positive Supply Voltage 3.135 3.3 3.465 V VDDA Analog Supply Voltage VDD – 0.12 3.3 VDD V VDDO Output Supply Voltage 3.135 3.3 3.465 V IDD Power Supply Current 100 mA IDDA Analog Supply Current 12 mA IDDO Output Supply Current 35 mA Table 4B. Power Supply DC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = 0°C to 70°C Symbol Parameter VDD Minimum Typical Maximum Units Positive Supply Voltage 2.375 2.5 2.625 V VDDA Analog Supply Voltage VDD – 0.12 3.3 VDD V VDDO Output Supply Voltage 2.375 2.5 2.625 V IDD Power Supply Current 90 mA IDDA Analog Supply Current 12 mA IDDO Output Supply Current 25 mA Rev A 3/30/15 Test Conditions 4 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Table 4C. LVCMOS/LVTTL DC Characteristics, VDD = VDDO = 3.3V ± 5% or 2.5V ± 5%, TA = 0°C to 70°CC Symbol Parameter Test Conditions Minimum VDD = 3.3V Typical Maximum Units VIH Input High Voltage 2 VDD + 0.3 V VDD = 2.5V 1.7 VDD + 0.3 V VIL Input Low Voltage VDD = 3.3V -0.3 0.8 V VDD = 2.5V -0.3 0.7 V IIH Input High Current OE, M0, M1, N0, N1 VDD = VIN = 3.465V or 2.625V 5 µA IIL Input Low Current OE, M0, M1, N0, N1 VDD = VIN = 3.465V or 2.625V -150 µA V Output High Voltage; NOTE 1 VDDO = 3.3V±5% 2.6 VOH VDDO = 2.5V±5% 1.8 V VOL Output Low Voltage; NOTE 1 VDDO = 3.3V±5% or 2.5V±5% 0.5 V NOTE 1: Outputs terminated with 50 to VDDO/2. See Parameter Measurement Information, Output Load Test Circuit diagrams. Table 5. Crystal Characteristics Parameter Test Conditions Minimum Maximum Units 42.67 MHz Equivalent Series Resistance (ESR) 50  Shunt Capacitance 7 pF Drive Level 1 mW Mode of Oscillation Typical Fundamental Frequency 15.3125 NOTE: It is not recommended to overdrive the crystal input with an external clock. Rev A 3/30/15 5 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET AC Electrical Characteristics Table 6A. AC Characteristics, VDD = VDDO = 3.3V ± 5%, TA = 0°C to 70°C Parameter Symbol fOUT Output Frequency tjit(Ø) tR / tF odc RMS Phase Jitter, Random; NOTE 1 Output Rise/Fall Time Output Duty Cycle Test Conditions Minimum Typical 81.67 Maximum Units 213.33 MHz 100MHz, Integration Range: 637kHz – 10MHz 0.54 ps 106.25MHz, Integration Range: 637kHz – 10MHz 0.38 ps 20% to 80% 200 700 ps Q, N = 3 40 60 % Q, N 3 48 52 % REF_OUT 48 52 % NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has been reached under these conditions NOTE 1: Please refer to Phase Noise Plot. Table 6B. AC Characteristics, VDD = VDDO = 2.5V ± 5%, TA = 0°C to 70°C Parameter Symbol fOUT Output Frequency tjit(Ø) RMS Phase Jitter, Random; NOTE 1 tR / tF odc Output Rise/Fall Time Output Duty Cycle Test Conditions Minimum Typical 81.67 Maximum Units 213.33 MHz 100MHz, Integration Range: 637kHz – 10MHz 0.54 ps 106.25MHz, Integration Range: 637kHz – 10MHz 0.38 ps 20% to 80% 300 800 ps Q, N = 3 35 65 % Q, N 3 40 60 % REF_OUT 45 55 % NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. Device will meet specifications after thermal equilibrium has been reached under these conditions NOTE 1: Please refer to Phase Noise Plot. Rev A 3/30/15 6 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET ➝ Typical Phase Noise at 100MHz (3.3V) Filter Raw Phase Noise Data ➝ ➝ Noise Power dBc Hz 100MHz RMS Phase Jitter (Random) 637kHz to 10MHz = 0.54ps (typical) Phase Noise Result by adding a filter to raw data Offset Frequency (Hz) ➝ Typical Phase Noise at 106.25MHz (3.3V) Fibre Channel Filter Raw Phase Noise Data ➝ ➝ Noise Power dBc Hz 106.25MHz RMS Phase Jitter (Random) 637kHz to 10MHz = 0.38ps (typical) Phase Noise Result by adding a Fibre Channel filter to raw data Offset Frequency (Hz) Rev A 3/30/15 7 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Parameter Measurement Information 1.25V±5% 1.65V±5% 1.25V±5% 1.65V±5% SCOPE VDD, VDDO VDDA SCOPE VDD, VDDO VDDA Qx GND GND -1.65V±5% -1.25V±5% 3.3V LVCMOS Output Load AC Test Circuit Qx 2.5V LVCMOS Output Load AC Test Circuit Phase Noise Plot V DDO Noise Power Q, REF_OUT 2 t PW Phase Noise Mask f1 Offset Frequency t odc = f2 PERIOD t PW x 100% t PERIOD RMS Jitter = Area Under the Masked Phase Noise Plot RMS Phase Jitter Q, REF_OUT Output Duty Cycle/Pulse Width/Period 80% 80% tR tF 20% 20% Output Rise/Fall Time Rev A 3/30/15 8 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Application Information Power Supply Filtering Technique 3.3V To achieve optimum jitter performance, power supply isolation is required. The ICS40001I-34 provides separate power supplies to isolate any high switching noise from the outputs to the internal PLL. VDD, VDDA, and VDDO should be individually connected to the power supply plane through vias, and 0.01µF bypass capacitors should be used for each pin. Figure 1 illustrates this for a generic VDD pin and also shows that VDDA requires that an additional 10 resistor along with a 10F bypass capacitor be connected to the VDDA pin. VDD .01µF 10Ω .01µF 10µF VDDA Figure 1. Power Supply Filtering Recommendations for Unused Input and Output Pins Inputs: Outputs: LVCMOS Control Pins: LVCMOS Output All control pins have internal pull-ups; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. All unused LVCMOS output can be left floating. There should be no trace attached. Crystal Input Interface The ICS840001I-34 has been characterized with 18pF parallel resonant crystals. The capacitor values, C1 and C2, shown in Figure 2 below were determined using a 26.5625MHz, 18pF parallel resonant crystal and were chosen to minimize the ppm error. The optimum C1 and C2 values can be slightly adjusted for different board layouts. XTAL_IN C1 33pF X1 18pF Parallel Crystal XTAL_OUT C2 33pF Figure 2. Crystal Input Interface Rev A 3/30/15 9 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET VFQFN EPAD Thermal Release Path In order to maximize both the removal of heat from the package and the electrical performance, a land pattern must be incorporated on the Printed Circuit Board (PCB) within the footprint of the package corresponding to the exposed metal pad or exposed heat slug on the package, as shown in Figure 4. The solderable area on the PCB, as defined by the solder mask, should be at least the same size/shape as the exposed pad/slug area on the package to maximize the thermal/electrical performance. Sufficient clearance should be designed on the PCB between the outer edges of the land pattern and the inner edges of pad pattern for the leads to avoid any shorts. application specific and dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated in the land pattern. It is recommended to use as many vias connected to ground as possible. It is also recommended that the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is desirable to avoid any solder wicking inside the via during the soldering process which may result in voids in solder between the exposed pad/slug and the thermal land. Precautions should be taken to eliminate any solder voids between the exposed heat slug and the land pattern. Note: These recommendations are to be used as a guideline only. For further information, please refer to the Application Note on the Surface Mount Assembly of Amkor’s Thermally/Electrically Enhance Leadframe Base Package, Amkor Technology. While the land pattern on the PCB provides a means of heat transfer and electrical grounding from the package to the board through a solder joint, thermal vias are necessary to effectively conduct from the surface of the PCB to the ground plane(s). The land pattern must be connected to ground through these vias. The vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are PIN PIN PAD SOLDER EXPOSED HEAT SLUG GROUND PLANE THERMAL VIA SOLDER LAND PATTERN (GROUND PAD) PIN PIN PAD Figure 4. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (drawing not to scale) Rev A 3/30/15 10 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Reliability Information Table 7. JA vs. Air Flow Table for a 16 Lead VFQFN JA at 0 Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 1 2.5 76.1°C/W 66.5 59.7 Transistor Count The transistor count for 840001-34 is: 2805 Rev A 3/30/15 11 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Package Outline and Package Dimensions Package Outline - K Suffix for 16 Lead VFQFN (Ref.) Seating Plane ND & NE Even (ND-1)x e (R ef.) A1 Index Area A3 N Top View Anvil Singulation or Sawn Singulation L N e (Typ.) 2 If ND & NE 1 are Even 2 E2 (NE -1)x e (Re f.) E2 2 b A (Ref.) D Chamfer 4x 0.6 x 0.6 max OPTIONAL e ND & NE Odd 0. 08 C D2 2 Thermal Base D2 C Table 8. Package Dimensions Symbol N A A1 A3 b ND & NE D&E D2 & E2 e L JEDEC Variation: VEED-2/-4 All Dimensions in Millimeters Minimum Maximum 16 0.80 1.00 0 0.05 0.25 Ref. 0.18 0.30 4 3.00 Basic 1.00 1.80 0.50 Basic 0.30 0.50 Reference Document: JEDEC Publication 95, MO-220 Rev A 3/30/15 12 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Ordering Information Table 9. Ordering Information Part/Order Number ICS840001AK-34LF ICS840001AK-34LFT Marking A34L A34L Package “Lead-Free” 16 Lead VFQFN “Lead-Free” 16 Lead VFQFN Shipping Packaging Tray Tape & Reel Temperature 0°C to 70°C 0°C to 70°C NOTE: Parts that are ordered with an "LF" suffix to the part number are the Pb-Free configuration and are RoHS compliant. Rev A 3/30/15 13 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER 840001-34 DATASHEET Revision History Sheet Rev Table A Rev A 3/30/15 Description of Change Date 11 13 Updated VFQFN EPAD Thermal Release Path section. Updated Package Drawing. 10/27/08 Deleted HiPerClockS references. Crystal Characteristics Table - added note. Deleted application note, LVCMOS to XTAL Interface. Deleted quantity from tape and reel 11/2/12 T9 1 5 9 13 T9 13 Ordering Information - removed leaded devices. Updated data sheet format. 3/30/15 A A Page T5 14 FEMTOCLOCKS™ CRYSTAL-TO-LVCMOS/LVTTL FREQUENCY SYNTHESIZER Corporate Headquarters Sales Tech Support 6024 Silver Creek Valley Road San Jose, CA 95138 USA 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.IDT.com email: clocks@idt.com DISCLAIMER Integrated Device Technology, Inc. (IDT) and its subsidiaries reserve the right to modify the products and/or specifications described herein at any time and at IDT’s sole discretion. All information in this document, including descriptions of product features and performance, is subject to change without notice. Performance specifications and the operating parameters of the described products are determined in the independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT’s products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT’s products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. While the information presented herein has been checked for both accuracy and reliability, Integrated Device Technology (IDT) assumes no responsibility for either its use or for the infringement of any patents or other rights of third parties, which would result from its use. No other circuits, patents, or licenses are implied. This product is intended for use in normal commercial applications. Any other applications, such as those requiring extended temperature ranges, high reliability or other extraordinary environmental requirements are not recommended without additional processing by IDT. IDT reserves the right to change any circuitry or specifications without notice. IDT does not authorize or warrant any IDT product for use in life support devices or critical medical instruments. Integrated Device Technology, IDT and the IDT logo are registered trademarks of IDT. Product specification subject to change without notice. Other trademarks and service marks used herein, including protected names, logos and designs, are the property of IDT or their respective third party owners. Copyright ©2015 Integrated Device Technology, Inc.. All rights reserved. IMPORTANT NOTICE AND DISCLAIMER RENESAS ELECTRONICS CORPORATION AND ITS SUBSIDIARIES (“RENESAS”) PROVIDES TECHNICAL SPECIFICATIONS AND RELIABILITY DATA (INCLUDING DATASHEETS), DESIGN RESOURCES (INCLUDING REFERENCE DESIGNS), APPLICATION OR OTHER DESIGN ADVICE, WEB TOOLS, SAFETY INFORMATION, AND OTHER RESOURCES “AS IS” AND WITH ALL FAULTS, AND DISCLAIMS ALL WARRANTIES, EXPRESS OR IMPLIED, INCLUDING, WITHOUT LIMITATION, ANY IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, OR NON-INFRINGEMENT OF THIRD PARTY INTELLECTUAL PROPERTY RIGHTS. These resources are intended for developers skilled in the art designing with Renesas products. You are solely responsible for (1) selecting the appropriate products for your application, (2) designing, validating, and testing your application, and (3) ensuring your application meets applicable standards, and any other safety, security, or other requirements. These resources are subject to change without notice. Renesas grants you permission to use these resources only for development of an application that uses Renesas products. Other reproduction or use of these resources is strictly prohibited. No license is granted to any other Renesas intellectual property or to any third party intellectual property. Renesas disclaims responsibility for, and you will fully indemnify Renesas and its representatives against, any claims, damages, costs, losses, or liabilities arising out of your use of these resources. Renesas' products are provided only subject to Renesas' Terms and Conditions of Sale or other applicable terms agreed to in writing. No use of any Renesas resources expands or otherwise alters any applicable warranties or warranty disclaimers for these products. (Rev.1.0 Mar 2020) Corporate Headquarters Contact Information TOYOSU FORESIA, 3-2-24 Toyosu, Koto-ku, Tokyo 135-0061, Japan www.renesas.com For further information on a product, technology, the most up-to-date version of a document, or your nearest sales office, please visit: www.renesas.com/contact/ Trademarks Renesas and the Renesas logo are trademarks of Renesas Electronics Corporation. All trademarks and registered trademarks are the property of their respective owners. © 2020 Renesas Electronics Corporation. All rights reserved.
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