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841N254BKILF

841N254BKILF

  • 厂商:

    RENESAS(瑞萨)

  • 封装:

    VFQFN-32

  • 描述:

    IC CLK SYNTH PLL 250MHZ 32VFQFN

  • 数据手册
  • 价格&库存
841N254BKILF 数据手册
FemtoClock® NG Crystal-to-LVDS/ HCSL Clock Synthesizer 841N254B Datasheet Description Features The 841N254B is a 4-output clock synthesizer designed for S-RIO 1.3 and 2.0 reference clock applications. The device generates four copies of a selectable 250MHz, 156.25MHz, 125MHz or 100MHz clock signal with excellent phase jitter performance. The four outputs are organized in two banks of two LVDS and two HCSL ouputs. The device uses IDT’s fourth generation FemtoClock® NG technology for an optimum of high clock frequency and low phase noise performance, combined with a low power consumption and high power supply noise rejection. The synthesized clock frequency and the phase-noise performance are optimized for driving RIO 1.3 and 2.0 SerDes reference clocks. ▪ Fourth generation FemtoClock® (NG) technology ▪ Selectable 250MHz, 156.25MHz, 125MHz or 100MHz output ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ ▪ The device supports 3.3V and 2.5V voltage supplies and is packaged in a small 32-lead VFQFN package. The extended temperature range supports wireless infrastructure, telecommunication and networking end equipment requirements. Function Table Inputs F_SEL1 F_SEL0 Output Frequency with fXTAL = 25MHz 0 (default) 0 (default) 156.25MHz 0 1 125MHz 1 0 100MHz 1 1 250MHz clock synthesized from a 25MHz fundamental mode crystal Four differential clock outputs (two LVDS and two HCSL outputs) Crystal interface designed for 25MHz, parallel resonant crystal RMS phase jitter at 156.25MHz, using a 25MHz crystal (1MHz - 20MHz): 0.27ps (typical) RMS phase jitter at 156.25MHz, using a 25MHz crystal (12kHz - 20MHz): 0.32ps (typical) Power supply noise rejection PSNR: -50dB (typical) LVCMOS interface levels for the frequency select input Full 3.3V or 2.5V supply voltage Lead-free (RoHS 6) packaging -40°C to 85°C ambient operating temperature NOTE: F_SEL[1:0] are asynchronous controls. Block Diagram ©2018 Integrated Device Technology, Inc. 1 April 17, 2018 841N254B Datasheet Contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Function Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pin Description and Pin Characteristic Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Function Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 DC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 DC Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Typical Phase Noise at 156.25MHz (3.3V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Typical Phase Noise at 156.25MHz (3.3V) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Parameter Measurement Information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Applications Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Recommendations for Unused Input Pins . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Inputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Outputs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Interface to IDT S-RIO Switches . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Overdriving the XTAL Interface . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 HCSL Recommended Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 LVDS Driver Termination . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 VFQFN EPAD Thermal Release Path . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Schematic Layout . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 Power Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21 Reliability Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Transistor Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22 Package Outline Drawings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Ordering Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 ©2018 Integrated Device Technology, Inc. 2 April 17, 2018 841N254B Datasheet Pin Description and Pin Characteristic Tables Table 1. Pin Descriptions Type[a] Number Name Description 1, 8, 13, 32 VDD Power Core supply pins. 2, 4 nc Unused No connect. 3 VDDA Power Analog power supply. 5, 17, 23, 25, 31 GND Power Power supply ground. 6 REF_CLK Input Pulldown Alternative single-ended reference clock input. LVCMOS/LVTTL interface levels. 7 nOEA Input Pulldown Output enable input. See Table 6 for function. LVCMOS/LVTTL interface levels. 9 nOEB Input Pulldown Output enable input. See Table 7 for function. LVCMOS/LVTTL interface levels. 10 REF_SEL Input Pulldown Reference select input. See Table 4 for function. LVCMOS/LVTTL interface levels. 11, 12 XTAL_IN, XTAL_OUT Input 14 BYPASS Input Pulldown Bypass mode select pin. See Table 5 for function. LVCMOS/LVTTL interface levels. 15, 16 F_SEL0, F_SEL1 Input Pulldown Frequency select pin. See Table 3 for function. LVCMOS/LVTTL interface levels. 18, 19 QA1, nQA1 Output Differential clock output. LVDS interface levels. 20 VDDOA Power Output supply pin for QAx outputs. 21, 22 QA0, nQA0 Output Differential clock output. LVDS interface levels. 24 IREF Input 26, 27 nQB1, QB1 Output Differential clock output. HCSL interface levels. 28 VDDOB Power Output supply pin for QBx outputs. 29, 30 nQB0, QB0 Output Differential clock output. HCSL interface levels. Crystal oscillator interface. XTAL_IN is the input, XTAL_OUT is the output. External fixed precision resistor (475) from this pin to ground provides a reference current used for differential current-mode QBx, nQBx clock outputs. [a] Pulldown refers to internal input resistors. See Table 2 for typical values. Table 2. Pin Characteristics Symbol Parameter CIN Input Capacitance RPULLDOWN Input Pulldown Resistor ©2018 Integrated Device Technology, Inc. Test Conditions 3 Minimum Typical Maximum Units 4 pF 100 k April 17, 2018 841N254B Datasheet Function Tables Table 3. Output Divider and Output Frequency Inputs[a] F_SEL1 F_SEL0 Operation fOUT with fREF = 25MHz 0 (default) 0 (default) fOUT = fREF * 25 ÷ 4 156.25MHz 0 1 fOUT = fREF * 5 125MHz 1 0 fOUT = fREF * 4 100MHz 1 1 fOUT = fREF * 10 250MHz [a] F_SEL[1:0] are asynchronous controls. Table 4. PLL Reference Clock Select Function Table Input REF_SEL[a] Operation 0 (default) The crystal interface is selected as reference clock 1 The REF_CLK input is selected as reference clock [a] REF_SEL is an asynchronous control. Table 5. PLL BYPASS Function Table Input BYPASS[a] Operation 0 (default) PLL is enabled. The reference frequency fREF is multiplied by the PLL feedback divider of 25 and then divided by the selected output divider N. 1 PLL is bypassed. The reference frequency fREF is divided by the selected output divider N. AC specifications do not apply in PLL bypass mode. [a] BYPASS is an asynchronous control. Table 6. nOEA Output Enable Function Table Input nOEA[a] 0 (default) 1 Operation QA0, nQA0 and QA1, nQA1 outputs are enabled QA0, nQA0 and QA1, nQA1 outputs are disabled (high-impedance) [a] nOEA is an asynchronous control. ©2018 Integrated Device Technology, Inc. 4 April 17, 2018 841N254B Datasheet Table 7. nOEB Output Enable Function Table Input nOEB[a] 0 (default) 1 Operation QB0, nQB0 and QB1, nQB1 outputs are enabled QB0, nQB0 and QB1, nQB1 outputs are disabled (high-impedance) [a] nOEB is an asynchronous control. Absolute Maximum Ratings Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These ratings are stress specifications only. Functional operation of the product at these conditions or any conditions beyond those listed in the DC Characteristics or AC Characteristics is not implied. Exposure to absolute maximum rating conditions for extended periods may affect product reliability. Table 8. Absolute Maximum Ratings Item Rating Supply Voltage, VDD 3.6V Inputs, VI XTAL_IN Other Inputs 0V to 2V -0.5V to VDD + 0.5V Outputs, VO (HCSL) -0.5V to VDD + 0.5V Outputs, IO (LVDS) Continuous Current Surge Current 10mA 15mA Package Thermal Impedance, JA 37.7°C/W (0 mps) Storage Temperature, TSTG -65C to 150C ©2018 Integrated Device Technology, Inc. 5 April 17, 2018 841N254B Datasheet DC Electrical Characteristics Table 9. Power Supply DC Characteristics, VDD = VDDOA = VDDOB = 3.3V±5% or 2.5V±5%, TA = -40°C to 85°C Symbol Parameter VDD Core Supply Voltage VDDA VDDOA& Test Conditions Analog Supply Voltage Output Supply Voltage B Minimum Typical Maximum Units 3.135 3.3 3.465 V 2.375 2.5 2.625 V VDD – 0.30 3.3 VDD V VDD – 0.30 2.5 VDD V 3.135 3.3 3.465 V 2.375 2.5 2.625 V IDDA Analog Supply Current 30 mA IDD Power Supply Current 113 mA IDDOA&B Output Supply Current 72 mA Table 10. LVCMOS/LVTTL Input DC Characteristics, VDD = VDDOA = VDDOB = 3.3V±5% or 2.5V±5%, TA = -40°C to 85°C Symbol Parameter VIH Input High Voltage VIL Input Low Voltage Test Conditions Minimum VDD = 3.3V Maximum Units 2 VDD + 0.3 V VDD = 2.5V 1.7 VDD + 0.3 V VDD = 3.3V -0.3 0.8 V VDD = 2.5V -0.3 0.7 V 150 µA IIH Input High Current nOEA, nOEB, BYPASS, REF_SEL, REF_CLK, F_SEL[1:0] VDD = VIN = 2.625V or 3.465V IIL Input Low Current nOEA, nOEB, BYPASS, REF_SEL, REF_CLK, F_SEL[1:0] VDD = 2.625V or 3.465V, VIN = 0V Typical -5 µA Table 11. LVDS 3.3V DC Characteristics, VDD = VDDOA = 3.3V ± 5% or 2.5V ± 5%, TA = -40°C to 85°C Symbol Parameter VOD Differential Output Voltage VOD VOD Magnitude Change VOS Offset Voltage VOS VOS Magnitude Change ©2018 Integrated Device Technology, Inc. Test Conditions Minimum 200 1.1 6 Typical Maximum Units 550 mV 50 mV 1.3 V 50 mV April 17, 2018 841N254B Datasheet Table 12. Crystal Characteristics Parameter Test Conditions Minimum Mode of Oscillation Typical Maximum Units Fundamental Frequency 25 MHz Equivalent Series Resistance (ESR) 80  Shunt Capacitance 7 pF DC Electrical Characteristics Table 13. AC Characteristics, VDD = VDDOA = VDDOB = 3.3V±5% or 2.5V±5%, TA = -40°C to 85°C Symbol Parameter Test Conditions fOUT Output Frequency F_SEL [1:0] = 00 156.25 MHz F_SEL [1:0] = 01 125 MHz F_SEL [1:0] = 10 100 MHz F_SEL [1:0] = 11 250 MHz REF_CLK 25 MHz 156.25MHz, Integration Range: 1MHz – 20MHz 0.27 ps 156.25MHz, Integration Range: 12kHz – 20MHz 0.32 ps 125MHz, Integration Range: 1MHz – 20MHz 0.33 ps 125MHz,Integration Range: 12kHz – 20MHz 0.37 ps 156.25MHz, Offset: 100Hz -91.6 dBc/Hz 156.25MHz, Offset: 1kHz -120.8 dBc/Hz 156.25MHz, Offset: 10kHz -132.2 dBc/Hz 156.25MHz, Offset: 100kHz -135.0 dBc/Hz From DC to 50MHz -50 dB Between QAx/nQAx & QBx/nQBx 1.8 fREF Reference Frequency tjit(Ø) RMS Phase Jitter (Random); NOTE 1 N Single-Side Band Noise Power Minimum PSNR Power Supply Noise Rejection tsk(o) Output Skew NOTE 2, 3 tsk(b) Bank Skew NOTE 3, 4 t R / tF Output Rise/Fall Time tLOCK PLL Lock Time VRB Ring-back Voltage Margin; NOTE 5, 6 QBx, nQBx -100 tSTABLE Time before VRB is Allowed; NOTE 5, 6 QBx, nQBx 500 QAx, nQAx ©2018 Integrated Device Technology, Inc. 20% to 80% 7 100 Typical Maximum Units 2.7 ns 55 ps 400 ps 20 ms 100 mV ps April 17, 2018 841N254B Datasheet Table 13. AC Characteristics, VDD = VDDOA = VDDOB = 3.3V±5% or 2.5V±5%, TA = -40°C to 85°C Symbol Parameter VMAX Absolute Maximum Output Voltage; NOTE 7, 8 QBx, nQBx VMIN Absolute Minimum Output Voltage; NOTE 7, 9 QBx, nQBx -300 VCROSS Absolute Crossing Voltage; NOTE 7, 10, 11 QBx, nQBx 100 VCROSS Total Variation of VCROSS over all edges; NOTE 7, 10, 12 QBx, nQBx Rise/Fall Edge Rate; NOTE 5, 13 QBx, nQBx Output Duty Cycle; NOTE 5 Output Duty Cycle odc Test Conditions Minimum Typical Maximum Units 1150 mV mV 350 mV 140 mV 0.6 5.5 V/ns QBx, nQBx 47 53 % QAx, nQAx 47 53 % Measured between -150mV to 150mV NOTE: Electrical parameters are guaranteed over the specified ambient operating temperature range, which is established when the device is mounted in a test socket with maintained transverse airflow greater than 500 lfpm. The device will meet specifications after thermal equilibrium has been reached under these conditions. NOTE: Characterized using a 25MHz crystal. NOTE 1: Please refer to the phase noise plots. NOTE 2: Defined as skew between outputs at the same supply voltage and with equal load conditions. Measured at the output differential cross points. NOTE 3: This parameter is defined in accordance with JEDEC Standard 65. NOTE 4: Defined as skew within a bank of outputs at the same voltage and with equal load conditions. NOTE 5: Measurement taken from differential waveform. NOTE 6: TSTABLE is the time the differential clock must maintain a minimum ±150mV differential voltage after rising/falling edges before it is allowed to drop back into the VRB ±100mV differential range. NOTE 7: Measurement taken from single ended waveform. NOTE 8: Defined as the maximum instantaneous voltage including overshoot. See Parameter Measurement Information Section. NOTE 9: Defined as the minimum instantaneous voltage including undershoot. See Parameter Measurement Information Section. NOTE 10: Measured at crossing point where the instantaneous voltage value of the rising edge of Q equals the falling edge of nQ. See Parameter Measurement Information Section. NOTE 11: Refers to the total variation from the lowest crossing point to the highest, regardless of which edge is crossing. Refers to all crossing points for this measurement. See Parameter Measurement Information Section. NOTE 12: Defined as the total variation of all crossing voltage of rising Q and falling nQ. This is the maximum allowed variance in the VCROSS for any particular system. See Parameter Measurement Information Section. NOTE 13: Measured from -150mV to +150mV on the differential waveform (derived from Q minus nQ). The signal must be monotonic through the measurement region for rise and fall time. The 300mV measurement window is centered on the differential zero crossing. ©2018 Integrated Device Technology, Inc. 8 April 17, 2018 841N254B Datasheet Typical Phase Noise at 156.25MHz (3.3V) Filter 156.25MHz RMS Phase Jitter (Random) 12kHz to 20MHz = 0.32ps (typical) Noise Power (dBc/Hz) Raw Phase Noise Data Phase Noise Result by adding a filter to raw data Offset Frequency (Hz) Typical Phase Noise at 156.25MHz (3.3V) Filter 156.25MHz RMS Phase Jitter (Random) 1MHz to 20MHz = 0.27ps (typical) Noise Power (dBc/Hz) Raw Phase Noise Data Phase Noise Result by adding a filter to raw data Offset Frequency (Hz) ©2018 Integrated Device Technology, Inc. 9 April 17, 2018 841N254B Datasheet Parameter Measurement Information Figure 1. 3.3V LVDS Output Load Test Circuit 3.3V ±5% VDD, VDDOA, VDDA Figure 2. 3.3V HCSL Output Load Test Circuit 3.3V±5% 3.3V±5% VDD, VDDOB VDDA Figure 3. 2.5V HCSL Output Load Test Circuit 2.5V±5% 2.5V±5% VDD, VDDOB VDDA ©2018 Integrated Device Technology, Inc. 10 April 17, 2018 841N254B Datasheet Figure 4. 2.5V LVDS Output Load Test Circuit SCOPE 2.5V±5% POWER SUPPLY + Float GND – VDD, VDDOA, Qx VDDA nQx Figure 5. 3.3V HCSL Output Load Test Circuit 3.3V±5% 3.3V±5% VDD, VDDOB VDDA This load condition is used for IDD, tjit(Ø), tsk(b) and tsk(o) measurements. Figure 6. 2.5V HCSL Output Load Test Circuit 2.5V±5% 2.5V±5% VDD, VDDOB VDDA This load condition is used for IDD, tjit(Ø), tsk(b) and tsk(o) measurements. ©2018 Integrated Device Technology, Inc. 11 April 17, 2018 841N254B Datasheet Figure 7. RMS Phase Jitter Noise Power Phase Noise Plot Phase Noise Mask f1 Offset Frequency f2 RMS Jitter = Area Under the Masked Phase Noise Plot Figure 8. Output Skew nQx Qx nQy Qy Figure 9. Differential Measurement Points for Ringback TSTABLE VRB +150mV VRB = +100mV 0.0V VRB = -100mV -150mV Q - nQ VRB TSTABLE Figure 10. LVDS Output Duty Cycle/Pulse Width/Period nQA[0:1] QA[0:1] ©2018 Integrated Device Technology, Inc. 12 April 17, 2018 841N254B Datasheet Figure 11. Bank Skew nQX0 QX1 nQX0 QX1 tsk(b) Where X = Bank A or Bank B Figure 12. Differential Measurement Points for Duty Cycle/Period Figure 13. HCSL Differential Measurement Points for Rise/Fall Time Figure 14. Single-ended Measurement Points for Delta Cross Point ©2018 Integrated Device Technology, Inc. 13 April 17, 2018 841N254B Datasheet Figure 15. Offset Voltage Setup Figure 16. LVDS Rise/Fall Time nQA[0:1] 80% 80% VOD QA[0:1] 20% 20% tR tF Figure 17. Single-ended Measurement Points for Absolute Cross Point/Swing Figure 18. Differential Output Voltage Setup ©2018 Integrated Device Technology, Inc. 14 April 17, 2018 841N254B Datasheet Applications Information Recommendations for Unused Input Pins Inputs REF_CLK Input For applications not requiring the use of the reference clock, it can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from the REF_CLK to ground. Crystal Inputs For applications not requiring the use of the crystal oscillator input, both XTAL_IN and XTAL_OUT can be left floating. Though not required, but for additional protection, a 1k resistor can be tied from XTAL_IN to ground. LVCMOS Control Pins All control pins have internal pulldowns; additional resistance is not required but can be added for additional protection. A 1k resistor can be used. Outputs LVDS Outputs All unused LVDS output pairs can be either left floating or terminated with 100 across. If they are left floating, we recommend that there is no trace attached. Differential Outputs All unused differential outputs can be left floating. We recommend that there is no trace attached. Both sides of the differential output pair should either be left floating or terminated. Interface to IDT S-RIO Switches The 841N254B is designed for driving the differential reference clock input (REF_CLK) of IDT’s S-RIO 1.3 and 2.0 switch devices. Both the LVDS and the HCSL outputs of the ICS841N254BI have the low-jitter, differential voltage and impedance characteristics required to provide a high-quality 156.25MHz clock signal for both S-RIO 1.3 and 2.0 switch devices. Please see Figure 19 and Figure 20 for suggested interfaces. The interfaces differ by the driving output, LVDS and HCSL, and the corresponding source termination method. In both figures, the AC-coupling capacitors are mandatory by the IDT S-RIO switch devices. The differential REF_CLK input is internally re-biased and AC-terminated. Both interface circuits are optimized for 50 transmission lines and generate the voltage swing required to reliably drive the clock reference input of a IDT S-RIO switch. Please refer to IDT’s S-RIO device datasheet for more details. Figure 19. LVDS-to-S-RIO 2.0 Reference Clock Interface QAn LVDS REF_CLK_P T= 50 LI CI RL VBIAS LI RL + REF_CLK - CI ICS841N254BI IDT S-RIO 1.3, 2.0 Switch ©2018 Integrated Device Technology, Inc. 15 April 17, 2018 841N254B Datasheet Figure 19 shows the recommended interface circuit for driving the 156.25MHz reference clock of an IDT S-RIO 2.0 switch by a LVDS output (QA0, QA1) of the ICS841N254BI. The LVDS-to-differential interface as shown in Figure 19 does not require any external termination resistors: the ICS841N254BI driver contains an internal source termination at QA0 and QA1. The differential REF_CLK input contains an internal AC-termination (RL) and re-bias (VBIAS). Figure 20 shows the interface circuit for driving the 156.25MHz reference clock of an IDT S-RIO 2.0 switch by an HCSL output of the 841N254B (QB0, QB1): The HCSL-to-differential interface requires external termination resistors (22...33 and 50) for source termination, which should be placed close the driver (QB0, QB1). Figure 20. HCSL-to-S-RIO 2.0 Reference Clock Interface QBn REF_CLK_P HCSL nQBn T= 50 22...33 LI CI RL VBIAS 22...33 49.9 49.9 RL LI + REF_CLK - CI IDT S-RIO 1.3, 2.0 Switch ICS841N254BI Overdriving the XTAL Interface The XTAL_IN input can be overdriven by an LVCMOS driver or by one side of a differential driver through an AC coupling capacitor. The XTAL_OUT pin can be left floating. The amplitude of the input signal should be between 500mV and 1.8V and the slew rate should not be less than 0.2V/nS. For 3.3V LVCMOS inputs, the amplitude must be reduced from full swing to at least half the swing in order to prevent signal interference with the power rail and to reduce internal noise. Figure 21 shows an example of the interface diagram for a high speed 3.3V LVCMOS driver. This configuration requires that the sum of the output impedance of the driver (Ro) and the series resistance (Rs) equals the transmission line impedance. In addition, matched termination at the crystal input will attenuate the signal in half. This can be done in one of two ways. First, R1 and R2 in parallel should equal the transmission line impedance. For most 50 applications, R1 and R2 can be 100. This can also be accomplished by removing R1 and changing R2 to 50. The values of the resistors can be increased to reduce the loading for a slower and weaker LVCMOS driver. Figure 22 shows an example of the interface diagram for an LVPECL driver. This is a standard LVPECL termination with one side of the driver feeding the XTAL_IN input. It is recommended that all components in the schematics be placed in the layout. Though some components might not be used, they can be utilized for debugging purposes. The datasheet specifications are characterized and guaranteed by using a quartz crystal as the input. Figure 21. General Diagram for LVCMOS Driver to XTAL Input Interface VCC XTAL_OUT R1 100 Ro Rs C1 Zo = 50 ohms XTAL_IN Zo = Ro + Rs R2 100 .1uf LVCMOS Driver ©2018 Integrated Device Technology, Inc. 16 April 17, 2018 841N254B Datasheet Figure 22. LVPECL Driver to XTAL Input Interface XTAL_OUT C2 Zo = 50 ohms XTAL_IN .1uf Zo = 50 ohms R1 50 LVPECL Driver R2 50 R3 50 HCSL Recommended Termination Figure 23 is the recommended source termination for applications where the driver and receiver will be on a separate PCBs. This termination is the standard for PCI Express™ and HCSL output types. All traces should be 50 impedance single-ended or 100 differential Figure 23. Recommended Source Termination (Where the driver and receiver will be on separate PCBs) 0.5" Max L1 L1 Rs 22 to 33 +/-5% 1-14" 0-0.2" 0.5 - 3.5" L2 L4 L5 L2 L4 L5 PCI Expres s PCI Expres s Driver Connector 0-0.2" Rt L3 L3 PCI Expres s Add-in Card 49.9 +/- 5% Figure 24 is the recommended termination for applications where a point-to-point connection can be used. A point-to-point connection contains both the driver and the receiver on the same PCB. With a matched termination at the receiver, transmission-line reflections will be minimized. In addition, a series resistor (Rs) at the driver offers flexibility and can help dampen unwanted reflections. The optional resistor can range from 0 to 33. All traces should be 50 impedance single-ended or 100 differential. ©2018 Integrated Device Technology, Inc. 17 April 17, 2018 841N254B Datasheet Figure 24. Recommended Termination (Where a point-to-point connection can be used) 0.5" Max L1 L1 Rs 0 to 33 0 to 33 0-18" 0-0.2" L2 L3 L2 L3 PCI Expres s 49.9 +/- 5% Rt Driver LVDS Driver Termination A general LVDS interface is shown in Figure 25. Standard termination for LVDS type output structure requires both a 100 parallel resistor at the receiver and a 100 differential transmission line environment. In order to avoid any transmission line reflection issues, the 100 resistor must be placed as close to the receiver as possible. IDT offers a full line of LVDS compliant devices with two types of output structures: current source and voltage source. The standard termination schematic as shown in Figure 25 can be used with either type of output structure. If using a non-standard termination, it is recommended to contact IDT and confirm if the output is a current source or a voltage source type structure. In addition, since these outputs are LVDS compatible, the amplitude and common mode input range of the input receivers should be verified for compatibility with the output. Figure 25. Typical LVDS Driver Termination + LVDS Driver LVDS Receiver 100Ω – 100Ω Differential Transmission Line ©2018 Integrated Device Technology, Inc. 18 April 17, 2018 841N254B Datasheet VFQFN EPAD Thermal Release Path In order to maximize both the removal of heat from the package and the electrical performance, a land pattern must be incorporated on the Printed Circuit Board (PCB) within the footprint of the package corresponding to the exposed metal pad or exposed heat slug on the package, as shown in Figure 26. The solderable area on the PCB, as defined by the solder mask, should be at least the same size/shape as the exposed pad/slug area on the package to maximize the thermal/electrical performance. Sufficient clearance should be designed on the PCB between the outer edges of the land pattern and the inner edges of pad pattern for the leads to avoid any shorts. While the land pattern on the PCB provides a means of heat transfer and electrical grounding from the package to the board through a solder joint, thermal vias are necessary to effectively conduct from the surface of the PCB to the ground plane(s). The land pattern must be connected to ground through these vias. The vias act as “heat pipes”. The number of vias (i.e. “heat pipes”) are application specific and dependent upon the package power dissipation as well as electrical conductivity requirements. Thus, thermal and electrical analysis and/or testing are recommended to determine the minimum number needed. Maximum thermal and electrical performance is achieved when an array of vias is incorporated in the land pattern. It is recommended to use as many vias connected to ground as possible. It is also recommended that the via diameter should be 12 to 13mils (0.30 to 0.33mm) with 1oz copper via barrel plating. This is desirable to avoid any solder wicking inside the via during the soldering process which may result in voids in solder between the exposed pad/slug and the thermal land. Precautions should be taken to eliminate any solder voids between the exposed heat slug and the land pattern. Note: These recommendations are to be used as a guideline only. For further information, please refer to the Application Note on the Surface Mount Assembly of Amkor’s Thermally/ Electrically Enhance Leadframe Base Package, Amkor Technology. Figure 26. P.C. Assembly for Exposed Pad Thermal Release Path – Side View (Drawing not to scale) PIN PIN PAD SOLDER EXPOSED HEAT SLUG GROUND PLANE THERMAL VIA SOLDER LAND PATTERN (GROUND PAD) PIN PIN PAD Schematic Layout Figure 27 shows an example of 841N254B application schematic. In this example, the device is operated at VDD = VDDOA = VDDOB = 3.3V. The 12pF parallel resonant 25MHz crystal is used. The load capacitance C1 = 5pF and C2 = 5pF are recommended for frequency accuracy. Depending on the parasitic of the printed circuit board layout, these values might require a slight adjustment to optimize the frequency accuracy. Crystals with other load capacitance specifications can be used. This will require adjusting C1 and C2. For this device, the crystal load capacitors are required for proper operation. As with any high speed analog circuitry, the power supply pins are vulnerable to random noise. To achieve optimum jitter performance, power supply isolation is required. The 841N254B provides separate power supplies to isolate any high switching noise from coupling into the internal PLL. In order to achieve the best possible filtering, it is recommended that the placement of the filter components be on the device side of the PCB as close to the power pins as possible. If space is limited, the 0.1µF capacitor in each power pin filter should be placed on the device side. The other components can be on the opposite side of the PCB. ©2018 Integrated Device Technology, Inc. 19 April 17, 2018 841N254B Datasheet Power supply filter recommendations are a general guideline to be used for reducing external noise from coupling into the devices. The filter performance is designed for a wide range of noise frequencies. This low-pass filter starts to attenuate noise at approximately 10kHz. If a specific frequency noise component is known, such as switching power supplies frequencies, it is recommended that component values be adjusted and if required, additional filtering be added. Additionally, good general design practices for power plane voltage stability suggests adding bulk capacitance in the local area of all devices. The schematic example focuses on functional connections and is not configuration specific. Refer to the pin description and functional tables in the datasheet to ensure that the logic control inputs are properly set. Figure 27. 841N254B Application Schematic L ogic Control Input E xamples Set Logic Inp ut t o '1' S et Log ic Input to '0' V DD R U1 1K QB0 VD D RU2 N ot I ns t al l To Logic Input pins 33 Zo = 50 + nQB0 R5 33 Zo = 50 - TL3 To Logic Input pins R D1 N ot I ns t all R4 TL2 R6 50 VDD O C6 0.1u RD2 1K Using for P CI Express Add-In C ard R7 50 R2 QB 1 nQB 1 V DD 475 VD D VDD=3.3V R3 V DD A 10 VDDOA= VDDOB=3.3V U1 V DD GND QB 0 nQB0 VDDOB QB 1 nQB 1 GND C7 10u C4 0.1u Optional R9 VDD 33 QB 1 1 2 3 4 5 6 7 8 Q1 Ro ~ 7 Ohm R 8 Zo = 50 Ohm REF _CLK nOE A 43 VDD nc VDD A nc GN D R EF _C LK nOEA VDD IRE F GN D nQA0 QA0 V D D OA nQA1 QA1 GN D 24 23 22 21 20 19 18 17 nQA0 QA0 VDD O QB 1_33 Zo = 50 nQB1 R 10 + TL5 - TL6 R 11 50 LV DS Termination nQA 1 3. 3V 2 - BLM18BB 221SN 1 V D DO F errit e Bead C 10 C9 0.1uF R1 100 C8 0.1u BLM18BB 221SN 1 1 + Z o = 100 O hm D if f erent ial VD D C2 5pF 3.3V QA1 B YP AS S F _SE L0 F_S EL1 nOE B RE F_S EL XTAL_I N XTA L_O U T F p 2 1 C1 5pF X1 25MH z R12 50 Using for PC I Express Point-to-P oint Connec tion 9 10 11 12 13 14 15 16 C5 0. 1u 33 nQB1_33 Zo = 50 nOE B RE F_S EL X TAL_IN XT AL_OUT VDD B YP AS S F _SE L0 F _S EL1 V DD D riv er_LV CMOS HCSL Term ina tion 32 31 30 29 28 27 26 25 V DD C3 0.01u C11 1 C 17 2 F errit e Bead C 13 10uF 0. 1uF ©2018 Integrated Device Technology, Inc. 0. 1uF C 12 0. 1uF 20 VDD C14 10uF 0. 1uF April 17, 2018 841N254B Datasheet Power Considerations This section provides information on power dissipation and junction temperature for the 841N254B. Equations and example calculations are also provided. 1. Power Dissipation. The total power dissipation for the 841N254B is the sum of the core power plus the analog power plus the power dissipated in the load(s). The following is the power dissipation for VDD = 3.3V + 5% = 3.465V, which gives worst case results. NOTE: Please refer to Section 3 for details on calculating power dissipated in the load. ▪ Power (core)MAX = VDD_MAX * (IDD_MAX + IDDA_MAX + IDDOA&B_MAX) = 3.465V *(113mA + 30mA + 72mA) = 744.98mW ▪ Power (HCSL_output)MAX = 44.5mW * 2 = 89.0mW Total Power_MAX = (3.465V, with all outputs switching) = 744.98mW + 89.0mW = 833.98mW 2. Junction Temperature. Junction temperature, Tj, is the temperature at the junction of the bond wire and bond pad, and directly affects the reliability of the device. The maximum recommended junction temperature is 125°C. Limiting the internal transistor junction temperature, Tj, to 125°C ensures that the bond wire and bond pad temperature remains below 125°C. The equation for Tj is as follows: Tj = JA * Pd_total + TA Tj = Junction Temperature JA = Junction-to-Ambient Thermal Resistance Pd_total = Total Device Power Dissipation (example calculation is in section 1 above) TA = Ambient Temperature In order to calculate junction temperature, the appropriate junction-to-ambient thermal resistance JA must be used. Assuming no air flow and a multi-layer board, the appropriate value is 37.7°C/W per Table 14. Therefore, Tj for an ambient temperature of 85°C with all outputs switching is: 85°C + 0.834W * 37.7°C/W = 116.4°C. This is below the limit of 125°C. This calculation is only an example. Tj will obviously vary depending on the number of loaded outputs, supply voltage, air flow and the type of board (multi-layer). Table 14. Thermal Resistance JA for 32-Lead VFQFN, Forced Convection JA Vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards ©2018 Integrated Device Technology, Inc. 0 1 2.5 37.7°C/W 32.9°C/W 29.5°C/W 21 April 17, 2018 841N254B Datasheet 3. Calculations and Equations. The purpose of this section is to calculate power dissipation on the IC per HCSL output pair. HCSL output driver circuit and termination are shown in Figure 28. Figure 28. HCSL Driver Circuit and Termination VDD IOUT = 17mA VOUT RREF = 475Ω ± 1% RL 50Ω IC HCSL is a current steering output which sources a maximum of 17mA of current per output. To calculate worst case on-chip power dissipation, use the following equations which assume a 50 load to ground. The highest power dissipation occurs when VDD_MAX. Power= (VDD_MAX – VOUT) * IOUT, since VOUT – IOUT * RL = (VDD_MAX – IOUT * RL) * IOUT = (3.465V – 17mA * 50) * 17mA Total Power Dissipation per output pair = 44.5mW Reliability Information Table 15. JA vs. Air Flow Table for a 32-lead VFQFN JA vs. Air Flow Meters per Second Multi-Layer PCB, JEDEC Standard Test Boards 0 1 2.5 37.7°C/W 32.9°C/W 29.5°C/W Transistor Count The transistor count for 841N254B is: 23,445 ©2018 Integrated Device Technology, Inc. 22 April 17, 2018 841N254B Datasheet Package Outline Drawings The package outline drawings are appended at the end of this document and are accessible from the link below. The package information is the most current data available. www.idt.com/document/psc/nlnlg-32-package-outline-50-x-50-mm-body-epad-315-x-315-050-mm-pitch-qfn Ordering Information Orderable Part Number Marking Package Carrier Type Temperature 841N254BKILF ICS1N254BIL Lead-Free 32-Lead VFQFN Tray -40C to 85C 841N254BKILFT ICS1N254BIL Lead-Free 32-Lead VFQFN Tape and Reel -40C to 85C Revision History Revision Date Description of Change April 17, 2018 Updated the package out drawings; however, no technical changes Completed other minor changes throughout the document May 23, 2016 Updated datasheet header/footer. Deleted “ICS” prefix from part number throughout the datasheet. November 4, 2013 Replacement part for ICS841N254AKI, per PCN# N1309-01. Corporate Headquarters Sales Tech Support 6024 Silver Creek Valley Road San Jose, CA 95138 USA www.IDT.com 1-800-345-7015 or 408-284-8200 Fax: 408-284-2775 www.IDT.com/go/sales www.IDT.com/go/support DISCLAIMER Integrated Device Technology, Inc. (IDT) and its affiliated companies (herein referred to as “IDT”) reserve the right to modify the products and/or specifications described herein at any time, without notice, at IDT’s sole discretion. Performance specifications and operating parameters of the described products are determined in an independent state and are not guaranteed to perform the same way when installed in customer products. The information contained herein is provided without representation or warranty of any kind, whether express or implied, including, but not limited to, the suitability of IDT's products for any particular purpose, an implied warranty of merchantability, or non-infringement of the intellectual property rights of others. This document is presented only as a guide and does not convey any license under intellectual property rights of IDT or any third parties. IDT's products are not intended for use in applications involving extreme environmental conditions or in life support systems or similar devices where the failure or malfunction of an IDT product can be reasonably expected to significantly affect the health or safety of users. Anyone using an IDT product in such a manner does so at their own risk, absent an express, written agreement by IDT. Integrated Device Technology, IDT and the IDT logo are trademarks or registered trademarks of IDT and its subsidiaries in the United States and other countries. Other trademarks used herein are the property of IDT or their respective third party owners. For datasheet type definitions and a glossary of common terms, visit www.idt.com/go/glossary. Integrated Device Technology, Inc. All rights reserved. ©2018 Integrated Device Technology, Inc. 23 April 17, 2018 32-VFQFPN, Package Outline Drawing 5.0 x 5.0 x 0.90 mm Body, Epad 3.15 x 3.15 mm. NLG32P1, PSC-4171-01, Rev 02, Page 1 32-VFQFPN, Package Outline Drawing 5.0 x 5.0 x 0.90 mm Body, Epad 3.15 x 3.15 mm. 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