FMY4A

UMY4N / UMZ2N / FMY4A / IMZ2A Transistors Power management (dual transistors) UMY4N / UMZ2N / FMY4A / IMZ2A !Features 1) Both a 2SA1037AK chip and 2SC2412K chip in a UMT or SMT package. !External dimensions (Units : mm) (4) (3) UMY4N 0.2 0.65 0.65 0.65 0.8 0.7 0.8 0.7 0.65 (5) 1.25 !Absolute maximum ratings (Ta = 25°C) 0.15 2.1 0.9 1.1 1.3 0.95 0.95 1.9 2.9 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power UMY4N, UMZ2N dissipation FMY4A, IMZ2A Junction temperature Storage temperature VCBO VCEO VEBO IC PC Tj Tstg Tr1 −60 −50 Tr2 60 50 0.1Min. V V V mA mW °C °C ROHM : UMT5 EIAJ : SC-88A 0to0.1 Parameter Symbol Limits Unit Each lead has same dimensions −6 7 −150 150 150 (TOTAL) 300 (TOTAL) 150 −55~+150 ∗1 ∗2 0.2 (4) (3) UMZ2N ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. (5) (6) 1.25 2.1 0.15 0.1Min. 0to0.1 !Package, marking, and packaging specifications Part No. Package Marking Code Basic ordering unit (pieces) UMY4N UMT5 Y4 TR 3000 UMZ2N UMT6 Z2 TR 3000 FMY4A SMT5 Y4 T148 3000 IMZ2A SMT6 Z2 T108 3000 ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions FMY4A 0.95 0.95 1.9 0.3 (2) (4) (3) (1) !Circuit diagrams UMY4N FMY4A 0.15 0.3to0.6 1.6 2.8 0to0.1 Tr1 Tr2 Tr2 Tr1 ROHM : SMT5 EIAJ : SC-74A Each lead has same dimensions UMZ2N IMZ2A Tr2 Tr1 Tr2 Tr1 IMZ2A (6) 0.3 (4) (5) 1.6 2.8 0.15 0.3to0.6 0to0.1 ROHM : SMT6 EIAJ : SC-74 Each lead has same dimensions (3) (2) (1) (5) (1) (2) (1) 1.3 (2) UMY4N / UMZ2N / FMY4A / IMZ2A Transistors !Electrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. −60 −50 −6 − − − 120 − − Typ. − − − − − − − 140 4 Max. − − − −0.1 −0.1 −0.5 560 − 5 Unit V V V µA µA V − MHz pF IC = −50µA IC = −1mA IE = −50µA VCB = −60V VEB = −6V IC/IB = −50mA/−5mA VCE = −6V , IC = −1mA VCE = −12V , IE = 2mA , f = 100MHz VCB = −12V , IE = 0A , f = 1MHz Conditions ∗ ∗ Transition frequency of the device. Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE fT Cob Min. 60 50 7 − − − 120 − − Typ. − − − − − − − 180 2 Max. − − − 0.1 0.1 0.4 560 − 3.5 Unit V V V µA µA V − MHz pF IC = 50µA IC = 1mA IE = 50µA VCB = 60V VEB = 7V Conditions IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz ∗ ∗ Transition frequency of the device.