FMY4AT148

FMY4A Transistors Power management (dual transistors) zExternal dimensions (Unit : mm) e N co ew m m D es en ig de ns d f zFeature 1) Both a 2SA1037AK chip and 2SC2412K chip in a EMT or UMT or SMT package. or FMY4A ROHM : SMT5 EIAJ : SC-74A Tr1 (2) 2.9 (3) (4) 0.3to0.6 (5) 0to0.1 (4) 0.8 0.15 2.8 FMY4A Tr2 (5) (1) 1.6 zEquivalent circuits (3) 0.95 0.95 1.9 (2) SOT-25 0.3 FMY4A Each lead has same dimensions (1) zAbsolute maximum ratings (Ta = 25°C) Parameter Symbol Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature VCBO VCEO VEBO IC PC Tj Tstg ∗1 200mW per element must not be exceeded. Limits Tr1 −60 Tr2 60 −50 50 −6 7 −150 150 300 (TOTAL) 150 −55 to +150 Unit V V V mA mW °C °C ∗1 zPackage, marking, and packaging specifications FMY4A SMT5 Y4 T148 3000 N ot R Part No. Package Marking Code Basic ordering unit (pieces) Rev.A 1/4 FMY4A Transistors zElectrical characteristics (Ta=25°C) Tr1 (PNP) Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO −60 −50 −6 − − − 120 − − − − − − − − − − −0.1 −0.1 −0.5 560 V V V µA µA V − Cob − − 140 4 − 5 MHz pF Symbol Min. Typ. Max. Unit BVCBO BVCEO BVEBO VCE(sat) 60 50 7 − − − − − − − − − − − − 0.1 0.1 0.4 V V V µA µA V hFE 120 − 560 − fT − − 180 2 − 3.5 MHz pF ICBO IEBO VCE(sat) hFE ∗ Transition frequency of the device. Tr2 (NPN) IE = −50µA VCB = −60V VEB = −6V IC/IB = −50mA/−5mA VCE = −6V , IC = −1mA VCE = −12V , IE = 2mA , f = 100MHz VCB = −12V , IE = 0A , f = 1MHz ∗ e N co ew m m D es en ig de ns d f fT Conditions IC = −50µA IC = −1mA or Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance ICBO IEBO Cob ∗ Transition frequency of the device. Conditions IC = 50µA IC = 1mA IE = 50µA VCB = 60V VEB = 7V IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz ∗ zElectrical characteristics curves PNP Tr −10 −5 −2 −1 −0.5 −0.2 R −0.1 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 BASE TO EMITTER VOLTAGE : VBE (V) Fig.1 Grounded emitter propagation characteristics −35.0 Ta=25˚C −31.5 −28.0 −8 −24.5 −21.0 −6 −17.5 −14.0 −4 −10.5 −7.0 −2 −3.5µA 0 −0.4 −0.8 −1.2 −1.6 IB=0 −2.0 COLLECTOR TO MITTER VOLTAGE : VCE (V) Fig.2 Grounded emitter output characteristics (Ι) −100 −80 −60 Ta=25˚C −500 −450 −400 −350 −300 −40 −20 0 −1 −2 −3 −250 −200 −150 −100 −50µA IB=0 −4 −5 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics (ΙΙ) N ot −10 VCE= −6V COLLECTOR CURRENT : IC (mA) −20 Ta=100˚C 25˚C −40˚C COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : Ic (mA) −50 Rev.A 2/4 FMY4A Ta=100˚C 25˚C DC CURRENT GAIN : hFE 200 50 100 50 −5 −10 −20 −0.2 −0.5 −1 −50 −100 IC/IB=50 −0.1 20 10 −1 1000 TRANSITION FREQUENCY : fT (MHz) −0.2 Ta=100˚C 25˚C −40˚C −0.1 −0.05 −0.2 −0.5 −1 −2 −5 −10 −20 500 200 100 50 −50 −100 0.5 1 1 100 0.5 0.2 0.1 0 COLLECTOR CURRENT : IC (mA) R 2 Ta=100°C ot 5 10 20 50 80 0.30mA 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.05mA IB=0A Fig.10 Grounded emitter propagation characteristics 0 0.4 0.8 1.2 −5 −10 −20 −50 −100 1.6 2.0 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Grounded emitter output characteristics ( Ι ) 20 Ta=25˚C f=1MHz IE=0A IC=0A Cib 10 Co b 5 2 −0.5 −1 −2 −5 −10 −20 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.9 Collector output capacitance vs. collector-base voltage Emitter inputcapacitance vs. emitter-base voltage 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C 0 BASE TO EMITTER VOLTAGE : VBE (V) 100 Fig.8 Gain bandwidth product vs. emitter current VCE=6V 25°C −55°C 10 5 EMITTER CURRENT : IE (mA) Fig.7 Collector-emitter saturation voltage vs. collector current (II) 20 2 −2 Fig.6 Collector-emitter saturation voltage vs. collector current (Ι) Ta=25˚C VCE= −12V COLLECTOR CURRENT : IC (mA) NPN Tr −0.2 −0.5 −1 COLLECTOR CURRENT : IC (mA) Fig.5 DC current gain vs. collector current (ΙΙ) lC/lB=10 −0.5 50 VCE= −6V −5 −10 −20 −50 −100 −2 COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current (Ι) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) −0.2 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) −2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) −0.5 −0.05 −0.2 −0.5 −1 N Ta=25˚C e N co ew m m D es en ig de ns d f 100 −40˚C 200 −1 10 COLLECTOR CURRENT : IC (mA) DC CURRENT GAIN : hFE VCE= −5V −3V −1V Ta=25˚C or 500 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors 30µA Ta=25°C 27µA 8 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 4 8 IB=0A 12 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.12 Grounded emitter output characteristics ( ΙΙ ) Rev.A 3/4 FMY4A 100 50 25°C 200 −55°C 100 50 0.5 1 2 5 10 20 20 10 0.2 50 100 200 5 10 20 50 100 200 Fig.14 DC current gain vs. collector current ( ΙΙ ) IC/IB=10 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Fig.13 DC current gain vs. collector current ( Ι ) 0.2 0.5 10 Cib ot 5 2 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.19 IC/IB=50 20 10 0.1 0.05 0.02 0.1 0.05 0.02 0.01 0.5 1 2 5 10 20 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage 0.5 1 2 5 10 20 50 100 200 Fig.15 Collector-emitter saturation voltage vs. collector current Ta=100°C 25°C −55°C 0.2 0.01 0.2 COLLECTOR CURRENT : IC (mA) IC/IB=50 0.2 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 50 100 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.17 Collector-emitter saturation voltage vs. collector current (ΙΙ) BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) Ta=25°C f=1MHz IE=0A IC=0A R 20 Ta=25°C 0.2 COLLECTOR CURRENT : IC (mA) Fig.16 Collector-emitter saturation voltage vs. collector current ( Ι ) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) 2 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) N 0.5 1 COLLECTOR CURRENT : IC (mA) 0.5 0.5 TRANSITION FREQUENCY : fT (MHz) 10 0.2 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) DC CURRENT GAIN : hFE VCE=5V 3V 1V 200 20 VCE=5V Ta=100°C or 500 Ta=25°C e N co ew m m D es en ig de ns d f DC CURRENT GAIN : hFE 500 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Fig.18 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.20 Base-collector time constant vs. emitter current Rev.A 4/4 Appendix or Notes e N co ew m m D es en ig de ns d f No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. R About Export Control Order in Japan N ot Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: ROHM Semiconductor: FMY4AT148