RBQ10T45A

Data Sheet Schottky Barrier Diode RBQ10T45A lApplications General rectification lDimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 lStructure ① 1.3 0.8 (1) (2) (3) 13.5MIN lConstruction Silicon epitaxial planer 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0 .2 8.0 0.7±0.1 0 .05 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 2.6±0.5 ROHM : TO220FN ① Manufacture Date lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) VR Reverse voltage (DC) Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature Tstg (*1) Rating of per diode : Io/2 lElectrical characteristics (Tj=25C) Parameter Forward voltage Reverse current Limits 45 45 10 50 150 -40 to +150 Unit V V A A C C Symbol VF IR Min. - Typ. Max. 0.65 150 Unit V mA Conditions IF=5A VR=45V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RBQ10T45A 　 Data Sheet 10 100000 10000 REVERSE CURRENT:IR(μA) 1000 Ta=125°C 100 10 1 0.1 Ta=-25°C 0.01 0 100 200 300 400 500 600 700 800 0 10 20 30 40 50 Ta=75°C Ta=150°C Ta=125°C FORWARD CURRENT:IF(A) Ta=150°C 1 Ta=75°C 0.1 Ta=25°C Ta=25°C Ta=-25°C 0.01 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 1000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz FORWARD VOLTAGE:VF(mV) 600 590 580 570 560 550 540 530 520 510 AVE:551.3mV Ta=25°C IF=5A n=30pcs 100 10 1 0 5 10 15 20 25 30 500 VF DISPERSION MAP REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 30 Ta=25°C VR=45V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF) 550 540 530 520 510 500 490 480 470 460 450 AVE:489.8pF Ta=25°C f=1MHz VR=0V n=10pcsa 25 REVERSE CURRENT:IR(mA) 20 15 10 AVE:12.2mA 5 0 IR DISPERSION MAP Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ10T45A 　 Data Sheet 300 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 200 REVERSE RECOVERY TIME:trr(ns) IFSM 1cyc 25 20 AVE:128.5A 15 AVE:10.8ns 100 10 5 0 IFSM DISRESION MAP 0 trr DISPERSION MAP 300 300 250 PEAK SURGE FORWARD CURRENT:IFSM(A) IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 8.3ms 1cyc 250 IFSM t 200 200 150 150 100 100 50 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 1000 10 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 100 FORWARD POWER DISSIPATION:Pf(W) 8 Rth(j-a) 10 D=1/2 6 Sin(q＝180) 4 1 Rth(j-c) 0.1 2 DC 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 5 10 15 20 TIME:t(s) Rth-t CHARACTERISTICS AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ10T45A 　 Data Sheet 2 30 0A 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0V DC 20 D=1/2 15 T t Io VR D=t/T VR=20V Tj=150°C 1.5 REVERSE POWER DISSIPATION:PR (W) 1 DC 0.5 Sin(q=180) D=1/2 10 5 Sin(q＝180) 0 0 10 20 30 40 50 0 0 25 50 75 100 125 150 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 30 0A 25 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0V t 20 DC T Io VR D=t/T VR=20V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) 30 AVE:23.3kV 25 20 15 D=1/2 10 15 10 AVE:4.9kV 5 5 Sin(q＝180) 0 0 25 50 75 100 125 150 0 C=200pF R=0W C=100pF R=1.5kW CASE TEMPERATURE:Tc(℃) DERATING DURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A