Data Sheet
Schottky Barrier Diode
RBQ30T45A
lApplications General rectification lDimensions (Unit : mm)
4.5±0.3 0.1 10.0±0.3 0.1 2.8±0.2 0.1
lStructure
①
1.3 0.8 (1) (2) (3)
13.5MIN
lConstruction Silicon epitaxial planer
1 .2
5.0±0.2
8.0±0.2 12.0±0.2
15.0±0.4 0.2 8.0
0.7±0.1 0 .05
lFeatures 1)Cathode common type. 2)Low IR 3)High reliability
2.6±0.5
ROHM : TO220FN ① Manufacture Date
lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature (*1) Rating of per diode : Io/2 Tstg
Limits 45 45 30 100 150 -40 to +150
Unit V V A A °C °C
lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.65 450 Unit V mA IF=15A VR=45V Conditions
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1/4
2011.11 - Rev.A
RBQ30T45A
Data Sheet
100
100000 Ta=150°C 10000 REVERSE CURRENT:IR(μA) Ta=125°C Ta=150°C
FORWARD CURRENT:IF(A)
10
1000
Ta=125°C
100 Ta=75°C 10 1
1
Ta=75°C Ta=25°C
0.1 Ta=-25°C
Ta=25°C
0.1 Ta=-25°C
0.01 0 100 200 300 400 500 600 700 800 FORWARD VOLTAGE:VF(mV) VF-IF CHARACTERISTICS
0.01 0 10 20 30 40 50
REVERSE VOLTAGE:VR(V) VR-IR CHARACTERISTICS
10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1000 FORWARD VOLTAGE:VF(mV)
600 590 580 570 560 550 540 530 520 510 AVE:564.4mV Ta=25°C IF=15A n=30pcs
100
10
1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
500
VF DISPERSION MAP
100 90 80 REVERSE CURRENT:IR(mA) 70 60 50 40 30 20 10 0 IR DISPERSION MAP AVE:36.6mA Ta=25°C VR=45V n=30pcs CAPACITANCE BETWEEN TERMINALS:Ct(pF)
1600 1590 1580 AVE:1562.4pF 1570 1560 1550 1540 1530 1520 1510 1500 Ct DISPERSION MAP
Ta=25°C f=1MHz VR=0V n=10pcs
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2/4
2011.11 - Rev.A
RBQ30T45A
Data Sheet
500
30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs
PEAK SURGE FORWARD CURRENT:IFSM(A)
400
IFSM 8.3ms
1cyc
REVERSE RECOVERY TIME:trr(ns)
25 AVE:19.2ns 20
300
AVE265A
15
200
10
100
5
0 IFSM DISRESION MAP
0 trr DISPERSION MAP
500 450 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A) 400 8.3ms 350 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 1cyc 8.3ms
500 450 400 350 300 250 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t
1000
35
TRANSIENT THERMAL IMPEDANCE:Rth (°C/W)
30 100 Rth(j-a) 10 FORWARD POWER DISSIPATION:Pf(W) 25 D=1/2 Sin(q=180)
20 15
1
Rth(j-c)
10 0.1 5 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30
DC
40
50
TIME:t(s) Rth-t CHARACTERISTICS
AVERAGE RECTIFIED FORWARD CURRENT:Io(A) Io-Pf CHARACTERISTICS
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3/4
2011.11 - Rev.A
RBQ30T45A
Data Sheet
6
60 0A Io t T DC D=1/2 30 VR D=t/T VR=20V Tj=150°C 0V
5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
50
REVERSE POWER DISSIPATION:PR (W)
4
40
3 DC Sin(θ=180) 1 D=1/2
2
20
10
Sin(q=180)
0 0 10 20 30 40 50
0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta)
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
80 Io 70 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 60 DC 50 40 30 20 10 0 0 25 50 75 100 125 150 D=1/2 T 0A 0V t
30 No break at 30kV VR D=t/T VR=20V Tj=150°C ELECTROSTATIC DISCHARGE TEST ESD(KV) 25
20
15 AVE:16.2kV 10
Sin(q=180)
5
0 C=200pF R=0W C=100pF R=1.5kW
CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc)
ESD DISPERSION MAP
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4/4
2011.11 - Rev.A
Notice
Notes
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R1120A
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