RBQ20T45A

Data Sheet Schottky Barrier Diode RBQ20T45A lApplications General rectification 　　　 lDimensions (Unit : mm) 4.5±0.3 　　　 0.1 10.0±0.3 　　　 0.1 2.8±0.2 　　　 0.1 lStructure ① 1.3 0.8 (1) (2) (3) 13.5MIN lConstruction Silicon epitaxial planer 1.2 5.0±0.2 8.0±0.2 12.0±0.2 15.0±0.4 　 0.2 8.0 0.7±0.1 0 .05 lFeatures 1)Cathode common type. 2)Low IR 3)High reliability 2.6±0.5 ROHM : TO220FN ① Manufacture Date lAbsolute maximum ratings (Tc=25C) Parameter Symbol VRM Reverse voltage (repetitive) Reverse voltage (DC) VR Average rectified forward current (*1) Io IFSM Forward current surge peak (60Hz・1cyc) Junction temperature Tj Storage temperature (*1) Rating of per diode : Io/2 Tstg Limits 45 45 20 100 150 -40 to +150 Unit V V A A °C °C lElectrical characteristics (Tj=25°C) Parameter Forward voltage Reverse current Symbol VF IR Min. Typ. Max. 0.65 300 Unit V mA IF=10A VR=45V Conditions www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/4 2011.11 - Rev.A RBQ20T45A 　 Data Sheet 100 100000 Ta=150°C Ta=125°C REVERSE CURRENT:IR(mA) 10000 FORWARD CURRENT:IF(A) 10 Ta=150°C Ta=75°C Ta=25°C 0.1 Ta=-25°C 1000 Ta=125°C 100 Ta=75°C 10 1 1 Ta=25°C 0.1 Ta=-25°C 0.01 0 100 200 300 400 500 600 700 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 0.01 0 10 20 30 40 50 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 10000 CAPACITANCE BETWEEN TERMINALS:Ct(pF) f=1MHz 1000 FORWARD VOLTAGE:VF(mV) 550 Ta=25°C IF=10A n=30pcs 540 AVE:538.6mV 530 100 520 10 510 1 0 5 10 15 20 25 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 500 VF DISPERSION MAP 50 45 40 REVERSE CURRENT:IR(mA) 35 30 25 20 15 10 5 0 IR DISPERSION MAP AVE:27.7mA CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25°C VR=45V n=30pcs 1300 Ta=25°C f=1MHz VR=0V n=10pcs 1250 1200 AVE:1140.8pF 1150 1100 1050 1000 Ct DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/4 2011.11 - Rev.A RBQ20T45A 　 Data Sheet 500 450 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 400 350 300 250 200 150 100 50 0 IFSM DISRESION MAP AVE240A 8.3ms 1cyc REVERSE RECOVERY TIME:trr(ns) 30 Ta=25°C IF=0.5A IR=1A Irr=0.25*IR n=10pcs AVE:14.6ns 15 25 20 10 5 0 trr DISPERSION MAP 500 450 IFSM PEAK SURGE FORWARD CURRENT:IFSM(A) 350 300 250 200 150 100 50 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 8.3ms 1cyc 8.3ms PEAK SURGE FORWARD CURRENT:IFSM(A) 400 500 450 400 350 300 250 200 150 100 50 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 IFSM t 1000 25 TRANSIENT THERMAL IMPEDANCE:Rth (°C/W) 100 FORWARD POWER DISSIPATION:Pf(W) 20 Rth(j-a) 10 15 D=1/2 Sin(q=180) 1 Rth(j-c) 10 DC 0.1 5 0.01 0.001 0 0.01 0.1 1 10 100 1000 0 10 20 30 40 AVERAGE RECTIFIED FORWARD CURRENT：Io(A) Io-Pf CHARACTERISTICS TIME:t(s) Rth-t CHARACTERISTICS www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/4 2011.11 - Rev.A RBQ20T45A 　 Data Sheet 4 3.5 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 3 REVERSE POWER DISSIPATION:PR (W) 2.5 2 1.5 D=1/2 1 0.5 0 0 10 20 30 40 50 REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS Sin(q＝180) 35 DC D=1/2 25 T 20 0A 0V t VR D=t/T VR=20V Tj=150°C Io 30 DC 15 10 Sin(q＝180) 5 0 0 25 50 75 100 125 150 AMBIENT TEMPERATURE:Ta(°C) DERATING CURVE(Io-Ta) 50 Io 45 40 AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Sin(q＝180) D=1/2 DC 0A 0V t T VR ELECTROSTATIC DISCHARGE TEST ESD(KV) D=t/T VR=20V Tj=150°C 30 No break at 30kV 25 20 15 10 AVE:12.4kV 5 0 C=200pF R=0W C=100pF R=1.5kW CASE TEMPERATURE:Tc(°C) DERATING CURVE(Io-Tc) ESD DISPERSION MAP www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 4/4 2011.11 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A