SCS108AG

SCS108AG | SiC Schottky Barrier Diodes | Discrete Semiconductors | ROHM CO., LTD. Page 1 of 1 SiC Schottky Barrier Diodes SCS108AG [ Product description ] Switching loss reduced, enabling high-speed switching . (2-pin package) Outline Features • Shorter recovery time • Reduced temperature dependence • High-speed switching possible Product specifications Absolute maximum ratings (Ta=25ºC) Rated parameters Repetitive peak reverse voltage VRM(V) Reverse voltage(DC) VR(V) Average rectified forward current IO(A) Forward current surge peak IFSM(A) Junction temperature Tj(ºC) Storage temperature Tstg(ºC) Standard value 600 600 8 32 60Hz/1cyc 150 -55 to +150 Conditions 9.8x15.4(t=4.4) Dimensions Equivalent circuit diagram *The contents described here are just outline for introduction. Please obtain the specification sheets from us for thorough check before use. Copyright © 1997-2011 ROHM CO.,LTD. http://www.rohm.com/products/discrete/sic/sic_schottky_barrier/scs108ag/print.html 2/16/2011