SCS112AG_1104

SiC Schottky Barrier Diode SCS112AG Applications Switching power supply Dimensions (Unit : mm) Structure Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible Construction Silicon carbide epitaxial planer type ROHM : ＴO-220AC Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current (*1) Forward current surge peak (60Hz 1cyc) (*2) ・ Junction temperature Storage temperature (*1)Tc=115°C max (*2)PW=8.3ms sinusoidal Symbol VRM VR IF IFSM Tj Tstg Limits 600 600 12 41 150 55 to 150 Unit V V A A °C °C Electrical characteristics (Ta=25°C) Parameter DC blocking voltage Forward voltage Reverse current Total capacitance Total capacitive charge Switching time Thermal resistance Symbol VDC VF IR C Qc tc Rth(j-c) Min. 600 - Typ. 1.5 2.4 516 56 22 16 - Max. 1.7 240 1.6 Unit V V μA pF pF nC ns °C/W IR=0.24mA IF=12A VR=600V Conditions VR=1V,f=1MHz VR=600V,f=1MHz VR=400V,di/dt=350A/μs VR=400V,di/dt=350A/μs junction to case www.rohm.com ©2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.04 - Rev.A SCS112AG 　 Data Sheet Fig.1 VF-IF Characteristics 100 pulsed 18 pulsed Fig.2 VF-IF Characteristics Ta= 125°C 10 FORWARD CURRENT: IF(A) Ta= 125°C 1 Ta= 75°C Ta= 25°C Ta=-25°C FORWARD CURRENT: IF(A) 12 Ta= 75°C 0.1 6 Ta= 25°C Ta=-25°C 0.01 0.001 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE : VF (V) 0 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE : VF (V) Fig.3 VR-IR Characteristics 100000 CAPACITANCE BETWEEN TERMINALS : Ct [pF] 1000 Fig.4 VR-Ct Characteristics 10000 REVERSE CURRENT (nA) Ta= 125°C 1000 Ta= 75°C Ta= 25°C 100 100 10 10 Ta=-25°C Ta=25°C f=1MHz 1 0.01 0.1 1 10 100 1000 REVERSE VOLTAGE : VR [V] 1 0 200 400 600 REVERSE VOLTAGE: VR (V) Fig.5 Thermal Resistance vs Pulse Width 10 90 80 THERMAL RESISTANCE (℃/W) 70 1 POWER DISSIPATION (W) 60 50 40 30 20 10 0 0.01 0.1 1 10 100 1000 Fig.6 Power Dissipation 0.1 Ta=25°C Single Pulse 0.01 0.00001 0.0001 0.001 0 30 60 90 120 150 PULSE WIDTH : Pw (s) CASE TEMPERATURE : Tc (℃) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 2/3 2011.04 - Rev.A SCS112AG 　 Data Sheet Fig.7 Derating Curve Ip-Tc 70 Duty=0.1 60 PEAK FORWARD CURRENT (A) POWER DISSIPATION (W) 40 35 30 25 20 15 10 D.C. 5 0 0 30 60 90 120 150 CASE TEMPARATURE : Tc (℃) 0 0 5 50 Duty=0.2 40 30 20 Duty=0.8 10 Duty=0.5 50 45 Fig.8 Io-Pf Characteristics D.C. Duty=0.8 Duty=0.5 Duty=0.2 Duty=0.1 10 15 20 AVERAGE RECTIFIED FORWARD CURRENT : Io (A) www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 3/3 2011.04 - Rev.A Notice Notes Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact us. ROHM Customer Support System http://www.rohm.com/contact/ www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. R1120A