SiC Schottky Barrier Diode
SCS110AG
Applications Switching power supply Dimensions (Unit : mm) Structure
Features 1)Shorter recovery time 2)Reduced temperature dependence 3)High-speed switching possible
Construction Silicon carbide epitaxial planer type
ROHM : TO-220AC
Absolute maximum ratings (Ta=25°C) Parameter Reverse voltage (repetitive) Reverse voltage (DC) Continuous forward current (*1) Forward current surge peak (60Hz 1cyc) (*2) ・ Junction temperature Storage temperature (*1)Tc=117°C max (*2)PW=8.3ms sinusoidal
Symbol VRM VR IF IFSM Tj Tstg
Limits 600 600 10 40 150 55 to 150
Unit V V A A °C °C
Electrical characteristics (Ta=25°C) Parameter DC blocking voltage Forward voltage Reverse current Total capacitance Total capacitive charge Switching time Thermal resistance
Symbol VDC VF IR C Qc tc Rth(j-c)
Min. 600 -
Typ. 1.5 2.0 430 47 16 15 -
Max. 1.7 200 1.8
Unit V V μA pF pF nC ns °C/W IR=0.2mA IF=10A VR=600V
Conditions
VR=1V,f=1MHz VR=600V,f=1MHz VR=400V,di/dt=350A/μs VR=400V,di/dt=350A/μs junction to case
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1/3
2011.04 - Rev.A
SCS110AG
Data Sheet
Fig.1 VF-IF Characteristics 100 pulsed 10 FORWARD CURRENT: IF(A) Ta= 125°C 1 Ta= 75°C Ta= 25°C Ta=-25°C 0.1 FORWARD CURRENT: IF(A) 10 15 pulsed
Fig.2 VF-IF Characteristics
Ta= 125°C Ta= 75°C
5 Ta= 25°C Ta=-25°C
0.01
0.001 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE : VF (V)
0 0 0.5 1 1.5 2 2.5 FORWARD VOLTAGE : VF (V)
Fig.3 VR-IR Characteristics 100000 CAPACITANCE BETWEEN TERMINALS : Ct [pF] 1000
Fig.4 VR-Ct Characteristics
10000 REVERSE CURRENT (nA) Ta= 125°C 1000 Ta= 75°C 100 Ta= 25°C
100
10
10
Ta=-25°C
Ta=25°C f=1MHz 1 0.01 0.1 1 10 100 1000 REVERSE VOLTAGE : VR [V]
1 0 200 400 600 REVERSE VOLTAGE : VR (V)
Fig.5 Thermal Resistance vs Pulse Width
10
Fig.6 Power Dissipation 80
Ta=25°C Single Pulse THERMAL RESISTANCE : (℃/W)
70 60
1
POWER DISSIPATION (W)
50 40 30 20 10
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
0 0 30 60 90 120 150 PULSE WIDTH : Pw ( s ) CASE TEMPERATURE : Tc (℃)
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2/3
2011.04 - Rev.A
SCS110AG
Data Sheet
Fig.7 Derating Curve Ip-Tc 60 Duty=0.1 PEAK FORWARD CURRENT (A) 50 POWER DISSIPATION (W) 30 25 20 15 10 5 0 0 30 60 90 120 150 CASE TEMPARATURE : Tc (℃) 0 0 40
Fig.8 Io-Pf Characteristics D.C. Duty=0.8 35 Duty=0.5 Duty=0.2 Duty=0.1
40
Duty=0.2
30 Duty=0.5 20
10
Duty=0.8
D.C.
5
10
15
AVERAGE RECTIFIED FORWARD CURRENT : Io (A)
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3/3
2011.04 - Rev.A
Notice
Notes
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R1120A
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