2SB647-TA

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92L Plastic-Encapsulate Transistors TO – 92L 2SB647 TRANSISTOR (PNP) 1. EMITTER FEATURES z Low Frequency Power Amplifier z Complementary Pair with 2SD667 2. COLLECTOR 3. BASE  Equivalent Circuit B647 'HYLFHFRGH Solid dot = Green molding compound device, if none, the normal device ;;; &RGH B647 z ORDERING INFORMATION Package Packing Method Pack Quantity 2SB647 TO-92L Bulk 500pcs/Bag 2SB647-TA TO-92L Tape 2000pcs/Box Part Number MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -120 V VCEO Collector-Emitter Voltage -80 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1 A PC Collector Power Dissipation 750 mW Thermal Resistance From Junction To Ambient 167 ℃/W -55~+150 ℃ RθJA TJ,Tstg www.jscj-elec.com Operation Junction and Storage Temperature Range 1 Rev. - 2.0  Ta =25 Я unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-10µA,IE=0 -120 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -80 V Emitter-base breakdown voltage V(BR)EBO IE=-10µA,IC=0 -5 V ICBO Collector cut-off current DC current gain Collector-emitter saturation voltage -10 μA VCE=-5V, IC=-150mA 60 hFE(2)* VCE=-5V, IC=-500mA 30 * VCE(sat) IC=-500mA,IB=-50mA -1 V VCE=-5V, IC=-150mA -1.5 V * Base-emitter voltage VBE Collector output capacitance Cob fT Transition frequency VCB=-100V,IE=0 hFE(1)* 320 VCB=-10V,IE=0, f=1MHz 20 pF VCE=-5V,IC=-150mA 140 MHz *Pulse test CLASSIFICATION OF hFE(1) RANK B C D RANGE 60-120 100-200 160-320 www.jscj-elec.com 2 Rev. - 2.0 Typical Characteristics Static Characteristic -1mA COMMON EMITTER Ta=25℃ IC -0.8mA -0.6mA -0.5mA -0.4mA -0.3mA -50 IC Ta=100℃ DC CURRENT GAIN -0.7mA -100 —— COMMON EMITTER VCE= -5V hFE (mA) -0.9mA -150 COLLECTOR CURRENT hFE 1000 -200 Ta=25℃ 100 -0.2mA IB=-0.1mA -0 10 -0 -1 -2 -3 -4 -5 COLLECTOR-EMITTER VOLTAGE VBEsat —— -1000 -6 -7 -1 IC VCEsat -500 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -800 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) —— -100 IC -1000 (mA) IC β=10 β=10 Ta=25℃ -600 Ta=100 ℃ -400 -200 -0 -0.1 -1 -10 -100 COLLECTOR CURREMT IC -1000 —— IC Ta=100 ℃ -100 Ta=25℃ -10 -0.1 -1000 -1 -10 COLLECTOR CURREMT (mA) VBE fT 500 -1000 (mA) IC Ta=25℃ TRANSITION FREQUENCY -10 T =2 5℃ a T =1 00℃ a COLLECTOR CURRENT IC fT -100 —— -100 IC COMMON EMITTER VCE= -5V (MHz) COMMON EMITTER VCE=-5V (mA) -10 COLLECTOR CURRENT VCE (V) -1 100 -0.1 -0 -200 -400 -600 -800 10 -20 -1000 -40 1000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (mW) Cib CAPACITANCE C (pF) Ta=25 ℃ Cob 10 1 -0.1 -80 —— IC -100 (mA) Ta 750 500 250 0 -1 REVERSE VOLTAGE www.jscj-elec.com PC 1000 f=1MHz IE=0/IC=0 100 -60 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (mV) -10 V 0 -30 25 50 75 AMBIENT TEMPERATURE (V) 3 100 Ta 125 150 (℃ ) Rev. - 2.0 Dimensions In Millimeters Min. Max. 3.750 4.050 1.280 1.580 0.380 0.550 0.620 0.780 0.350 0.450 4.750 5.050 4.000 7.850 8.150 1.270 TYP. 2.440 2.640 13.800 14.200 1.600 0.000 0.300 Symbol A A1 b b1 c D D1 E e e1 L Φ h Dimensions In Inches Min. Max. 0.148 0.159 0.050 0.062 0.015 0.022 0.024 0.031 0.014 0.018 0.187 0.199 0.157 0.309 0.321 0.050 TYP. 0.096 0.104 0.543 0.559 0.063 0.000 0.012 NOTICE JSCJ reserves the right to make modifications,enhancements,improvements,corrections or other changes without further notice to any product herein. JSCJ does not assume any liability arising out of the application or use of any product described herein. www.jscj-elec.com 4 Rev. - 2.0 www.jscj-elec.com 5 Rev. - 2.0