RU60120R

RU60120R N-Channel Advanced Power MOSFET MOSFET Features • 60V/125A, RDS (ON) =5.5mΩ(tpy.)@VGS=10V • Super High Dense Cell Design • Ultra Low On-Resistance • 100% avalanche tested Pin Description TO-220 • Lead Free and Green Devices Available (RoHS Compliant) Applications • DC-DC Converters • Inverter Systems N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating 60 ±25 175 -55 to 175 TC=25°C 125 ① Unit Common Ratings (TC=25°C Unless Otherwise Noted) VDSS VGSS TJ TSTG IS Drain-Source Voltage Gate-Source Voltage Maximum Junction Temperature Storage Temperature Range Diode Continuous Forward Current V °C °C A Mounted on Large Heat Sink I DP ID 300μs Pulse Drain Current Tested Continuous Drain Current TC=25°C TC=25°C TC=100°C PD RθJC ③ 480 ② ① A A W W °C/W 125 92 94 Maximum Power Dissipation Thermal Resistance-Junction to Case TC=25°C TC=100°C 188 0.8 Drain-Source Avalanche Ratings EAS Avalanche Energy, Single Pulsed 441 mJ Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 www.ruichips.com RU60120R Electrical Characteristics Symbol Static Characteristics BVDSS IDSS VGS(th) IGSS RDS(ON) ④ (TC=25°C Unless Otherwise Noted) RU60120R Min. Typ. Max. Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance VGS=0V, IDS=250µA VDS= 60V, VGS=0V TJ=85°C VDS=VGS, IDS=250µA VGS=±25V, VDS=0V VGS= 10V, IDS=32A 60 1 10 2 3 4 ±100 5.5 6 V µA V nA mΩ Diode Characteristics VSD trr Qrr ④ Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ⑤ ISD=32A, VGS=0V ISD=32A, dlSD/dt=100A/µs 48 96 VGS=0V,VDS=0V,F=1MHz VGS=0V, VDS= 30V, Frequency=1.0MHz VDD=30V, RL=1Ω, IDS=32A, VGEN= 10V, RG=4.7Ω 1.8 3870 580 263 32 108 85 45 1.2 V ns nC Ω pF Dynamic Characteristics RG Gate Resistance Ciss Coss Crss td(ON) tr td(OFF) tf Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time ⑤ ns Gate Charge Characteristics Qg Qgs Qgd Notes: Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=48V, VGS= 10V, IDS=32A 105 30 45 nC Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. Pulse width limited by safe operating area. Limited by TJmax, IAS =42A, VDD = 48V, RG = 47Ω , Starting TJ = 25°C. Pulse test ; Pulse width≤300µs, duty cycle≤2%. Guaranteed by design, not subject to production testing . Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 2 www.ruichips.com RU60120R Typical Characteristics Power Dissipation Drain Current Tj - Junction Temperature (°C) ID - Drain Current (A) Tj - Junction Temperature (°C) Ptot - Power (W) Safe Operation Area Thermal Transient Impedance VDS - Drain-Source Voltage (V) Normalized Effective Transient Square Wave Pulse Duration (sec) 3 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 ID - Drain Current (A) www.ruichips.com RU60120R Typical Characteristics Output Characteristics Drain-Source On Resistance VDS - Drain-Source Voltage (V) Drain-Source On Resistance RDS(ON) - On Resistance (mΩ) ID - Drain Current (A) ID - Drain Current (A) Gate Threshold Voltage VGS - Gate-Source Voltage (V) Normalized Threshold Voltage Tj - Junction Temperature (°C) 4 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 RDS(ON) - On - Resistance (m) www.ruichips.com RU60120R Typical Characteristics Drain-Source On Resistance Source-Drain Diode Forward Normalized On Resistance Tj - Junction Temperature (°C) Capacitance IS - Source Current (A) VSD - Source-Drain Voltage (V) Gate Charge VDS - Drain-Source Voltage (V) VGS - Gate-Source Voltage (V) C - Capacitance (pF) QG - Gate Charge (nC) 5 Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 www.ruichips.com RU60120R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 6 www.ruichips.com RU60120R Ordering and Marking Information RU60120 Package (Available) R : TO220 Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 7 www.ruichips.com RU60120R Package Information TO-220FB-3L SYMBOL A A1 A2 b b2 C D D1 DEP E E1 E2 MM MIN 4.40 1.27 2.35 0.77 1.23 0.48 15.40 9.00 0.05 9.70 9.80 NOM 4.57 1.30 2.40 0.50 15.60 9.10 0.10 9.90 8.70 10.00 MAX 4.70 1.33 2.50 0.90 1.36 0.52 15.80 9.20 0.20 10.10 10.20 MIN 0.173 0.050 0.093 0.030 0.048 0.019 0.606 0.354 0.002 0.382 0.386 INCH NOM 0.180 0.051 0.094 0.020 0.614 0.358 0.004 0.389 0.343 0.394 MAX 0.185 0.052 0.098 0.035 0.054 0.021 0.622 0.362 0.008 0.398 0.401 SYMBOL Øp1 e e1 H1 L L1 L2 Øp Q 3.57 2.73 5° 1° 6.40 12.75 MIN 1.40 MM NOM 1.50 2.54BSC 5.08BSC 6.50 2.50REF. 3.60 2.80 7° 3° 3.63 2.87 9° 5° 0.141 0.107 5° 1° 6.60 13.17 3.95 0.252 0.502 MAX 1.60 MIN 0.055 INCH NOM 0.059 0.1BSC 0.2BSC 0.256 0.098REF. 0.142 0.110 7° 3° 0.143 0.113 9° 5° 0.260 0.519 0.156 MAX 0.063 θ1 θ2 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 8 www.ruichips.com RU60120R Customer Service Worldwide Sales and Service: Sales@ruichips.com Technical Support: Technical@ruichips.com Investor Relations Contacts: Investor@ruichips.com Marcom Contact: Marcom@ruichips.com Editorial Contact: Editorial@ruichips.com HR Contact: HR@ruichips.com Legal Contact: Legal@ruichips.com Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: Sales-SZ@ruichips.com Copyright© Ruichips Semiconductor Co., Ltd Rev. A– JUN., 2011 9 www.ruichips.com