3LP01M-TL-H

3LP01M Ordering number : EN6139C SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 3LP01M General-Purpose Switching Device Applications Features • • • Low ON-resistance High-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±10 V Allowable Power Dissipation ID IDP PD 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.1 A --0.4 A This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Product & Package Information unit : mm (typ) 7023A-010 • Package : MCP • JEITA, JEDEC : SC-70, SOT-323 • Minimum Packing Quantity : 3,000 pcs./reel 0.15 3 3LP01M-TL-E 3LP01M-TL-H 0.9 Packing Type: TL Marking 1.25 0 to 0.08 LOT No. 1 XA 2 0.65 LOT No. TL 0.3 Electrical Connection 0.3 0.425 2.1 0.425 2.0 0.2 Package Dimensions 1 : Gate 2 : Source 3 : Drain 3 SANYO : MCP 1 2 http://semicon.sanyo.com/en/network 71112 TKIM/40908 TIIM TC-00001304/32406PE MSIM TB-00002153/90100 TSIM TA-2006 No.6139-1/7 3LP01M Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Conditions V(BR)DSS IDSS ID= --1mA, VGS=0V VDS= --30V, VGS=0V VGS=±8V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID= --50mA, VGS= --4V ID= --30mA, VGS= --2.5V ID= --1mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD Ratings min typ max --30 VDS= --10V, ID= --100μA VDS= --10V, ID= --50mA V --0.4 80 VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --100mA --1 μA ±10 μA --1.4 110 V mS 8 10.4 Ω 11 15.4 Ω 27 54 Ω 7.5 pF 5.7 pF 1.8 pF 24 ns 55 ns 120 ns 130 ns 1.43 nC 0.18 nC 0.25 IS= --100mA, VGS=0V Unit --0.83 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --15V VIN VIN PW=10μs D.C.≤1% D ID= --50mA RL=300Ω VOUT G 3LP01M P.G 50Ω S Ordering Information Package Shipping memo 3LP01M-TL-E Device MCP 3,000pcs./reel Pb Free 3LP01M-TL-H MCP 3,000pcs./reel Pb Free and Halogen Free No.6139-2/7 3LP01M ID -- VDS VDS= --10V --0.18 V .5 --2 --0.16 --2.0V V --0.06 --0.12 --0.10 --0.05 --0.08 --0.04 --0.06 --0.03 VGS= --1.5V --0.02 --0.04 --0.02 --0.01 0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain-to-Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 20 15 --50mA ID= --30mA 5 --3 --4 --5 --6 --7 --8 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 25°C 10 7 --25°C 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A 12 = V GS 10 5 --2. A 50m = -V, I D 4.0 = -V GS 8 6 4 2 --60 --40 --20 0 20 40 60 80 --25°C 5 3 2 2 3 100 Ambient Temperature, Ta -- °C 120 140 5 7 160 IT00083 2 --0.1 3 IT00080 RDS(on) -- ID VGS= --1.5V 5 3 2 100 7 5 25°C Ta=75°C 3 2 --25°C 2 3 5 7 2 --1.0 Drain Current, ID -- mA Forward Transfer Admittance, | yfs | -- S A 30m = -V, I D 7 3 IT00082 | yfs | -- ID 1.0 16 14 25°C Ta=75°C 10 IT00081 RDS(on) -- Ta 18 2 10 --0.1 3 --4.0 IT00078 3 7 3 --3.5 Drain Current, ID -- A VGS= --2.5V Ta=75°C --3.0 VGS= --4V IT00079 5 2 --2.5 RDS(on) -- ID 1000 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --10 RDS(on) -- ID 100 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω --9 --2.0 5 1.0 --0.01 0 --2 --1.5 7 25 --1 --1.0 100 Ta=25°C 0 --0.5 Gate-to-Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 10 25°C Ta= --0.14 --6.0 --0.07 75° C Drain Current, ID -- A --0.08 --25 °C --4 . --3 .0V 0V --3.5V --0.09 ID -- VGS --0.20 Drain Current, ID -- A --0.10 VDS= --10V 7 5 3 25°C 2 0.1 5°C 2 Ta= -- 75°C 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00084 No.6139-3/7 3LP01M IS -- VSD 3 Switching Time, SW Time -- ns 5 --0.01 --0.5 --0.6 --0.7 --25°C 2 25°C 3 Ta=7 5°C --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 3 2 10 Ciss Coss 5 3 2 Crss 3 5 7 Drain Current, ID -- A --0.1 IT00086 VGS -- Qg VDS= --10V ID= --0.1A --9 7 2 --10 5 Ciss, Coss, Crss -- pF tf 2 f=1MHz 7 --8 --7 --6 --5 --4 --3 --2 --1 1.0 0 0 --10 --5 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00088 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 3 IT00085 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.1 Gate-to-Sourse Voltage, VGS -- V Source Current, IS -- A 7 VDD= --15V VGS= --4V 7 2 --0.1 SW Time -- ID 1000 VGS=0V 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02381 No.6139-4/7 3LP01M Embossed Taping Specification 3LP01M-TL-E, 3LP01M-TL-H No.6139-5/7 3LP01M Outline Drawing 3LP01M-TL-E, 3LP01M-TL-H Land Pattern Example Mass (g) Unit 0.006 mm * For reference Unit: mm 2.1 1.0 0.7 0.65 0.65 No.6139-6/7 3LP01M Note on usage : Since the 3LP01M is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of July, 2012. Specifications and information herein are subject to change without notice. PS No.6139-7/7