5LP01S

Ordering number : EN6666A 5LP01S SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP01S Features • • • General-Purpose Switching Device Applications Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -50 ±10 --0.07 --0.28 0.15 150 --55 to +150 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 RDS(on)3 Ciss Coss Crss td(on) tr td(off) tf Conditions ID=--1mA, VGS=0V VDS=-50V, VGS=0V VGS=± 8V, VDS=0V VDS=-10V, ID=-100µA VDS=-10V, ID=--40mA ID=--40mA, VGS=--4V ID=--20mA, VGS=--2.5V ID=--5mA, VGS=-1.5V VDS=-10V, f=1MHz VDS=-10V, f=1MHz VDS=-10V, f=1MHz See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. Ratings min --50 --1 ± 10 --0.4 70 100 18 20 30 7.4 4.2 1.3 20 35 160 150 23 28 60 --1.4 typ max Unit V µA µA V mS Ω Ω Ω pF pF pF ns ns ns ns Marking : XB Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 71206 / 41006PE MS IM TB-00002192 / D2000 TS IM TA-3075 No.6666-1/4 5LP01S Continued from preceding page. Parameter Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Symbol Qg Qgs Qgd VSD Conditions VDS=--10V, VGS=-10V, ID=--70mA VDS=--10V, VGS=-10V, ID=--70mA VDS=--10V, VGS=-10V, ID=--70mA IS=--70mA, VGS=0V Ratings min typ 1.40 0.16 0.23 --0.85 --1.2 max Unit nC nC nC V Package Dimensions unit : mm 7027-004 1.6 0.8 Switching Time Test Circuit 0.4 0.2 0.4 0.3 0V --4V VIN VIN VDD= --25V ID= --40mA RL=625Ω PW=10µs D.C.≤1% D G VOUT 1.6 0.5 0.5 1 2 3 5LP01S 0.1 0 to 0.1 0.1 MIN 1 : Gate 2 : Source 3 : Drain SANYO : SMCP 0.75 0.6 P.G 50Ω S --0.07 ID -- VDS 0V V --0.14 ID -- VGS Ta= -25°C --6 . 0V --0.06 --2 --3 .5 .0 V --0.12 VDS= --10V 25°C --4 . Drain Current, ID -- A .5V --2.0V Drain Current, ID -- A --0.05 --3 --0.10 --0.03 --0.06 --0.02 VGS= --1.5V --0.04 --0.01 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 --1.8 --2.0 --0.02 0 0 --0.5 --1.0 --1.5 --2.0 --2.5 --3.0 --3.5 --4.0 Drain-to-Source Voltage, VDS -- V 40 IT00090 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 100 75° --0.04 --0.08 C IT00091 RDS(on) -- ID Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) -- Ω VGS= --4V 7 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 35 30 5 25 3 --40mA 20 Ta=75°C 2 ID= --20mA 25°C --25°C 15 10 0 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 10 --0.01 2 3 5 7 --0.1 2 3 Gate-to-Source Voltage, VGS -- V IT00092 Drain Current, ID -- A IT00093 No.6666-2/4 5LP01S 1000 7 RDS(on) -- ID VGS= --2.5V 100 RDS(on) -- ID VGS= --1.5V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 5 3 2 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 7 5 Ta=75°C 3 100 7 5 3 2 25°C --25°C 2 Ta=75°C 25°C --25°C 2 3 5 7 --0.1 2 3 10 --0.01 10 --0.001 2 3 5 7 --0.01 2 3 Drain Current, ID -- A 40 IT00094 1.0 Drain Current, ID -- A RDS(on) -- Ta yfs -- ID IT00095 Forward Transfer Admittance, yfs -- S 7 5 3 2 VDS= --10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 35 30 25 20 = m S -20 VG =A, ID m -40 =ID = S VG A, .5 --2 V .0 --4 V 0.1 7 5 3 2 °C Ta= --25 75°C 25°C 15 10 --60 --40 --20 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C 3 2 0.01 --0.01 2 3 5 7 --0.1 2 3 IT00096 1000 IS -- VSD VGS=0V Drain Current, ID -- A IT00097 SW Time -- ID 7 VDD= --25V VGS = --4V tf td(off) Switching Time, SW Time -- ns 5 3 2 Source Current, IS -- A --0.1 7 5 100 7 5 3 2 Ta=7 5°C 25°C 3 2 tr td(on) --0.01 --0.5 --25°C --0.6 --0.7 --0.8 --0.9 --1.0 --1.1 --1.2 IT00098 10 --0.01 2 3 5 7 Diode Forward Voltage, VSD -- V 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 0 --5 --10 --15 --20 --25 --30 --35 Ciss, Coss, Crss -- VDS f=1MHz Drain Current, ID -- A --10 --9 --0.1 IT00099 VGS -- Qg Gate-to-Source Voltage, VGS -- V VDS= --10V ID= --70mA --8 --7 --6 --5 --4 --3 --2 --1 0 Ciss, Coss, Crss -- pF Ciss Coss Crss --40 --45 --50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Drain-to-Source Voltage, VDS -- V IT00100 Total Gate Charge, Qg -- nC IT00101 No.6666-3/4 5LP01S 0.20 PD -- Ta Allowable Power Dissipation, PD -- W 0.15 0.10 0.05 0 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- °C IT02381 Note on usage : Since the 5LP01S is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of April, 2006. Specifications and information herein are subject to change without notice. PS No.6666-4/4