3LP01S-TL-E

Ordering number : EN6681C 3LP01S P-Channel Small Signal MOSFET http://onsemi.com –30V, –0.1A, 10.4Ω, Single SMCP Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain to Source Voltage Conditions Ratings VDSS VGSS Gate to Source Voltage Drain Current (DC) Unit --30 V ±10 V Allowable Power Dissipation ID IDP PD 0.15 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Drain Current (Pulse) PW≤10μs, duty cycle≤1% --0.1 A --0.4 A This product is designed to “ESD immunity < 200V*”, so please take care when handling. * Machine Model Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Ordering & Package Information unit : mm (typ) 7013A-013 Shipping memo 3LP01S-TL-E SMCP SC-75,SOT-416 3,000 pcs./reel Pb-Free 0.4 Marking 0.3 0.2 Packing Type: TL 1 2 3 0.1 0.75 0.6 0 to 0.1 0.1 MIN 1 : Gate 2 : Source 3 : Drain SMCP XA LOT No. LOT No. 1.6 0.5 0.5 Package 3LP01S-TL-E 1.6 0.8 0.4 Device TL Electrical Connection 3 1 2 Semiconductor Components Industries, LLC, 2013 June, 2013 62613 TKIM TC-00002948/62712 TKIM/41006PE MSIM TB-00002191/12201 TSIM TA-2005 No.6681-1/6 3LP01S Electrical Characteristics at Ta=25°C Parameter Symbol Drain to Source Breakdown Voltage Conditions V(BR)DSS IDSS IGSS VGS=±8V, VDS=0V Forward Transfer Admittance VGS(off) | yfs | VDS= --10V, ID= --100μA VDS= --10V, ID= --50mA Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 ID= --50mA, VGS= --4V ID= --30mA, VGS= --2.5V ID= --1mA, VGS= --1.5V Zero-Gate Voltage Drain Current Gate to Source Leakage Current Cutoff Voltage RDS(on)3 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) tr Rise Time Turn-OFF Delay Time Fall Time td(off) tf Total Gate Charge Qg Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Diode Forward Voltage VSD ID= --1mA, VGS=0V VDS= --30V, VGS=0V VDS= --10V, f=1MHz See specified Test Circuit. VDS= --10V, VGS= --10V, ID= --100mA Ratings min typ max --30 V --0.4 80 --1 μA ±10 μA --1.4 110 V mS 8 10.4 Ω 11 15.4 Ω 27 54 Ω 7.5 pF 5.7 pF 1.8 pF 24 ns 55 ns 120 ns 130 ns 1.43 nC 0.18 nC 0.25 IS= --100mA, VGS=0V Unit --0.83 nC --1.2 V Switching Time Test Circuit 0V --4V VDD= --15V VIN VIN PW=10μs D.C.≤1% D ID= --50mA RL=300Ω VOUT G 3LP01S P.G 50Ω S No.6681-2/6 3LP01S ID -- VDS --2 --0.18 --0.16 Drain Current, ID -- A V --2.0V --6.0 --0.07 --0.06 --0.05 --0.04 --0.03 VGS= --1.5V --0.02 --0.10 --0.08 --0.06 0 --0.2 0 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 --1.6 Drain to Source Voltage, VDS -- V --1.8 --2.0 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω 20 15 --50mA ID= --30mA 5 0 --1 --2 --3 --4 --5 --6 --7 --8 Gate to Source Voltage, VGS -- V --9 Ta=75°C 25°C --25°C 7 5 3 2 1.0 --0.01 2 3 5 7 2 --0.1 Drain Current, ID -- A , mA 2.5 = -S VG 30 -I D= 10 A, 50m -I D= 8 V 4.0 = -V GS 6 4 2 --60 --40 --20 0 20 40 60 80 3 2 2 3 5 100 Ambient Temperature, Ta -- °C 120 140 7 --0.1 160 IT00083 2 3 IT00080 RDS(on) -- ID VGS= --1.5V 5 3 2 100 7 5 3 Ta=75°C 2 --25°C 2 3 25°C 5 7 --1.0 Drain Current, ID -- mA Forward Transfer Admittance, | yfs | -- S V 12 --25°C 5 2 3 IT00082 | yfs | -- ID 1.0 16 14 7 IT00081 RDS(on) -- Ta 18 25°C Ta=75°C 10 10 --0.1 3 --4.0 IT00078 2 Drain Current, ID -- A Static Drain to Source On-State Resistance, RDS(on) -- Ω 3 --3.5 3 7 5 10 --3.0 VGS= --4V IT00079 VGS= --2.5V 2 --2.5 RDS(on) -- ID 1000 7 --2.0 5 1.0 --0.01 --10 RDS(on) -- ID 100 --1.5 7 25 0 --1.0 100 Ta=25°C 10 --0.5 Gate to Source Voltage, VGS -- V IT00077 RDS(on) -- VGS 30 Static Drain to Source On-State Resistance, RDS(on) -- Ω --0.12 25°C --0.02 0 Static Drain to Source On-State Resistance, RDS(on) -- Ω --0.14 --0.04 --0.01 Static Drain to Source On-State Resistance, RDS(on) -- Ω VDS= --10V Ta= --25 °C --3 .0V --4 . --0.08 Drain Current, ID -- A . 0V --3.5V --0.09 ID -- VGS --0.20 5V 75° C --0.10 VDS= --10V 7 5 3 25°C 2 5°C 2 Ta= -- 0.1 75°C 7 5 3 2 0.01 --0.01 2 3 5 7 --0.1 Drain Current, ID -- A 2 3 IT00084 No.6681-3/6 3LP01S IS -- VSD 3 Switching Time, SW Time -- ns 5 --0.01 --0.5 --0.6 --0.7 --25°C 2 25°C 3 Ta=7 5°C --0.8 --0.9 --1.0 Diode Forward Voltage, VSD -- V td(off) 100 7 5 tr 3 td(on) 2 3 2 10 Ciss Coss 5 3 2 Crss 3 5 7 Drain Current, ID -- A --0.1 IT00086 VGS -- Qg VDS= --10V ID= --0.1A --9 7 2 --10 5 Ciss, Coss, Crss -- pF tf 2 f=1MHz 7 --8 --7 --6 --5 --4 --3 --2 --1 0 1.0 0 --5 --10 --15 --20 --25 Drain to Source Voltage, VDS -- V --30 IT00087 0 0.2 0.4 0.6 0.8 1.0 1.2 Total Gate Charge, Qg -- nC 1.4 1.6 IT00088 PD -- Ta 0.20 Allowable Power Dissipation, PD -- W 3 IT00085 Ciss, Coss, Crss -- VDS 100 5 10 --0.01 --1.1 Gate to Source Voltage, VGS -- V Source Current, IS -- A 7 VDD= --15V VGS= --4V 7 2 --0.1 SW Time -- ID 1000 VGS=0V 0.15 0.10 0.05 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT02381 No.6681-4/6 3LP01S Outline Drawing 3LP01S-TL-E Land Pattern Example Mass (g) Unit 0.003 mm * For reference Unit: mm 0.7 1.3 0.7 0.7 0.6 0.5 0.5 No.6681-5/6 3LP01S Note on usage : Since the 3LP01S is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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