BFL4004

BFL4004 Ordering number : ENA1796 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET BFL4004 General-Purpose Switching Device Applications Features • • • ON-resistance RDS(on)=1.9Ω (typ.) Input capacitance Ciss=710pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 800 Gate-to-Source Voltage VGSS ±30 V Limited only by maximum temperature Tch=150°C 6.5 A IDpack*2 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 4.3 A IDP PW≤10μs, duty cycle≤1% 13 A 2.0 W IDc*1 Drain Current (DC) Drain Current (Pulse) V Allowable Power Dissipation PD 36 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 241 mJ 6.5 A Avalanche Current *5 Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=10mH, IAV=6.5A (Fig.1) *5 L≤10mH, single pulse Package Dimensions Product & Package Information unit : mm (typ) 7509-002 • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine 4.5 10.0 2.8 Marking Electrical Connection 7.2 3.5 3.2 FL4004 0.6 16.1 16.0 2 LOT No. 1.2 14.0 3.6 0.9 1.2 0.75 2.4 1 2 3 2.55 2.55 1 0.7 1 : Gate 2 : Drain 3 : Source 3 SANYO : TO-220FI(LS) http://semicon.sanyo.com/en/network 70710QB TK IM TC-00002398 No. A1796-1/5 BFL4004 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=640V, VGS=0V min typ Unit max 800 V 1.0 mA ±100 nA Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=3.25A Static Drain-to-Source On-State Resistance RDS(on) ID=3.25A, VGS=10V Input Capacitance Ciss VDS=30V, f=1MHz 710 pF Output Capacitance Coss VDS=30V, f=1MHz 120 pF Reverse Transfer Capacitance Crss VDS=30V, f=1MHz 42 pF Turn-ON Delay Time td(on) See Fig.2 17 ns Rise Time tr See Fig.2 44 ns Turn-OFF Delay Time td(off) See Fig.2 130 ns Fall Time tf Qg See Fig.2 44 ns VDS=200V, VGS=10V, ID=6.5A 36 nC 6.2 nC 18 nC 0.85 780 ns 5400 nC Total Gate Charge 2.0 1.7 3.4 Gate-to-Source Charge Qgs Qgd Diode Forward Voltage VSD VDS=200V, VGS=10V, ID=6.5A VDS=200V, VGS=10V, ID=6.5A IS=6.5A, VGS=0V Reverse Recovery Time trr See Fig.3 Reverse Recovery Charge Qrr IS=6.5A, VGS=0V, di/dt=100A/μs 2.5 1.2 Ω V Fig.2 Switching Time Test Circuit 10V 0V L VIN ≥50Ω RG VDD=200V ID=3.25A RL=61Ω VIN D 10V 0V V S 1.9 Gate-to-Drain “Miller” Charge Fig.1 Avalanche Resistance Test Circuit 4.0 VDD 50Ω VOUT PW=10μs D.C.≤0.5% BFL4004 G BFL4004 P.G RGS=50Ω S Fig.3 trr Reverse Recovery Time Test Circuit BFL4004 D 500μH G S VDD=50V Driver MOSFET No. A1796-2/5 BFL4004 ID -- VDS VDS=20V 15V 8 7V 6 6V 4 2 VGS=4V 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 0 50 Tc=75°C 3 2 25°C --25°C 1 4 5 6 7 8 9 10 11 12 13 Gate-to-Source Voltage, VGS -- V 14 °C 25 C 5° --2 °C = 75 Tc 1.0 7 5 3 2 0.1 2 3 5 7 0.1 2 3 5 7 1.0 2 3 Drain Current, ID -- A SW Time -- ID 7 6 5 4 A .25 =3 , ID 0V 3 =1 S VG 2 1 --25 0 25 50 75 100 125 150 IT15752 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 0.01 0.2 5 7 10 IT15753 100 7 tf 5 3 tr 2 td(on) 0.8 1.0 1.2 IT15754 f=1MHz 3 2 Ciss, Coss, Crss -- pF td (off) 0.6 Ciss, Coss, Crss -- VDS 5 3 2 0.4 Diode Forward Voltage, VSD -- V VDD=200V VGS=10V 5 1000 7 5 Ciss 3 Cos 2 s 100 7 5 Cr ss 3 2 10 7 0.1 12 IT15750 3 2 7 5 0.01 10 Single pulse 3 2 2 8 Case Temperature, Tc -- °C VDS=20V 3 6 RDS(on) -- Tc 0 --50 15 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 4 IT15751 | yfs | -- ID 7 Switching Time, SW Time -- ns Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 4 3 2 7 5 2 0 Gate-to-Source Voltage, VGS -- V ID=3.25A Single pulse 0 4 IT15749 RDS(on) -- VGS 6 75°C 6 Tc= 75° C 5 25°C 8 2 5V 0 Tc= --25°C 10 --25 °C 10V 25°C 10 0 ID -- VGS 12 Tc=25°C Drain Current, ID -- A Drain Current, ID -- A 12 2 3 5 7 1.0 2 3 Drain Current, ID -- A 5 7 2 10 IT15755 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT15756 No. A1796-3/5 BFL4004 VGS -- Qg 10 Drain Current, ID -- A 6 5 4 3 1 3 2 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 1.0 0.5 20 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15759 EAS -- Ta 120 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.5 0 2 3 PD -- Tc 40 2.0 0 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition Tc=25°C Single pulse 0.01 0.1 40 s Operation in this area is limited by RDS(on). IT15757 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 2 0 1m IDpack(*2)=4.3A 1.0 7 5 0.1 7 5 0 Avalanche Energy derating factor -- % 3 2 μs s 0μ 7 10 IDc(*1)=6.5A 10 8 IDP=13A(PW≤10μs) 10 7 5 s m s n 10 io 0m at 10 per o DC Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=200V ID=6.5A 5 71000 2 IT15758 36 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15760 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1796-4/5 BFL4004 Note on usage : Since the BFL4004 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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