BFL4026-1E

Ordering number : ENA1797A BFL4026 N-Channel Power MOSFET http://onsemi.com 900V, 5A, 3.6Ω, TO-220F-3FS Features • • ON-resistance RDS(on)=2.8Ω (typ.) 10V drive • Input capacitance Ciss=650pF (typ.) Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Unit 900 V ±30 V 5 A IDc*1 Limited only by maximum temperature Tch=150°C IDpack*2 Tc=25°C (Our ideal heat dissipation condition)*3 3.5 A Drain Current (Pulse) IDP PW≤10μs, duty cycle≤1% 10 A Allowable Power Dissipation PD 2.0 W Channel Temperature Drain Current (DC) 35 W Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *4 EAS IAV 132 mJ Avalanche Current *5 Tc=25°C (Our ideal heat dissipation condition)*3 5 A Note : *1 Shows chip capability *2 Package limited *3 Our condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=50V, L=10mH, IAV=5A (Fig.1) *5 L≤10mH, single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7528-001 • Package : TO-220F-3FS • JEITA, JEDEC : SC-67 • Minimum Packing Quantity : 50 pcs./magazine 4.7 10.16 3.18 BFL4026-1E Marking Electrical Connection 2 FL4026 3.23 15.8 15.87 6.68 3.3 2.54 LOT No. 1 12.98 2.76 1.47 MAX 3 0.8 1 2.54 2 3 0.5 2.54 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source TO-220F-3FS 71112 TKIM/70710QB TKIM TC-00002399 No. A1797-1/7 BFL4026 Electrical Characteristics at Ta=25°C Parameter Symbol Ratings Conditions Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS ID=10mA, VGS=0V VDS=720V, VGS=0V Gate-to-Source Leakage Current IGSS VGS=±30V, VDS=0V Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | VDS=10V, ID=1mA VDS=20V, ID=2.5A Static Drain-to-Source On-State Resistance RDS(on) ID=2.5A, VGS=10V Input Capacitance Ciss min typ Unit max 900 V 1.0 mA ±100 nA 2.0 4.0 1.4 2.8 V S 2.8 3.6 Ω 650 pF Output Capacitance Coss 100 pF Reverse Transfer Capacitance Crss 35 pF Turn-ON Delay Time td(on) 14 ns Rise Time tr 37 ns Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD IS=5A, VGS=0V 0.85 Reverse Recovery Time trr See Fig.3 720 ns Reverse Recovery Charge Qrr IS=5A, VGS=0V, di/dt=100A/μs 4700 nC VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=5A ≥50Ω RG 10V 0V ns 33 nC 5.3 nC nC 1.2 V Fig.2 Switching Time Test Circuit 10V 0V L VIN VDD=200V ID=2.5A RL=80Ω VIN G S ns 39 16.5 Fig.1 Avalanche Resistance Test Circuit D 117 D BFL4026 VDD 50Ω VOUT PW=10μs D.C.≤0.5% G BFL4026 P.G RGS=50Ω S Fig.3 Reverse Recovery Time Test Circuit BFL4026 D 500μH G S VDD=50V Driver MOSFET Ordering Information Device BFL4026-1E Package Shipping memo TO-220F-3FS 50pcs./magazine Pb Free No. A1797-2/7 BFL4026 ID -- VDS VDS=20V 9 7V 6 6V 4 3 2 5V VGS=4V 5 10 15 20 25 30 35 40 45 Drain-to-Source Voltage, VDS -- V 4 3 25°C 2 --25°C 1 3 4 5 6 7 8 9 10 11 12 13 7 5 7 5 3 2 0.1 7 2 3 5 7 0.1 2 3 5 7 1.0 2 3 SW Time -- ID 7 =1 S 4 VG 3 2 1 --25 0 25 50 75 100 125 150 IT15764 IS -- VSD VGS=0V Single pulse 3 2 1.0 7 5 3 2 0.1 7 5 100 7 5 tf 3 tr 2 td(on) 0.8 1.0 1.2 IT15766 f=1MHz 3 2 Ciss, Coss, Crss -- pF td (off) 0.6 Ciss, Coss, Crss -- VDS 5 3 2 0.4 Diode Forward Voltage, VSD -- V VDD=200V VGS=10V 5 Switching Time, SW Time -- ns .5A =2 ID , 0V 5 0.01 0.2 5 7 10 IT15765 Drain Current, ID -- A 1000 7 5 Ciss 3 2 Co ss 100 7 5 Cr ss 3 2 10 7 0.1 6 3 2 5 3 0.01 7 10 7 5 5°C --2 = Tc °C 75 1.0 12 IT15762 8 2 °C 25 2 10 Case Temperature, Tc -- °C VDS=20V 3 8 Single pulse IT15763 | yfs | -- ID 6 RDS(on) -- Tc 0 --50 15 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S Gate-to-Source Voltage, VGS -- V 14 4 Gate-to-Source Voltage, VGS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Tc=75°C 2 2 9 6 5 0 10 7 0 0 50 ID=2.5A Single pulse 8 2 IT15761 RDS(on) -- VGS 9 3 5°C 0 75°C 4 1 1 0 25°C 5 --25° C 5 6 25°C 7 Tc= --25°C Drain Current, ID -- A Drain Current, ID -- A 7 15V 10V 8 ID -- VGS 8 Tc=25°C Tc= 7 10 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 10 IT15767 10 0 5 10 15 20 25 30 35 40 Drain-to-Source Voltage, VDS -- V 45 50 IT15768 No. A1797-3/7 BFL4026 VGS -- Qg 10 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 5 4 1 3 2 5 10 15 20 25 30 35 Total Gate Charge, Qg -- nC 0.5 40 60 80 100 120 140 Ambient Temperature, Ta -- °C 160 IT15771 EAS -- Ta 120 5 7 1.0 2 3 5 7 10 2 3 5 7100 2 3 Drain-to-Source Voltage, VDS -- V Allowable Power Dissipation, PD -- W 1.0 20 2 3 PD -- Tc 40 1.5 0 *1. Shows chip capability *2. Our ideal heat dissipation condition Tc=25°C Single pulse 0.01 0.1 40 2.0 0 Operation in this area is limited by RDS(on). IT15769 PD -- Ta 2.5 Allowable Power Dissipation, PD -- W 3 2 2 0 1m s IDpack(*2)=3.5A 1.0 7 5 0.1 7 5 3 0 Avalanche Energy derating factor -- % 3 2 s 0μ 6 IDc(*1)=5A s m n 10 ms atio 0 r 10 ope DC 7 IDP=10A (PW≤10μs) 10 8 10 7 5 μs 10 9 ASO 2 VDS=200V ID=5A 5 71000 2 IT15770 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15772 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1797-4/7 BFL4026 Magazine Specification BFL4026-1E No. A1797-5/7 BFL4026 Outline Drawing BFL4026-1E Mass (g) Unit 1.8 mm * For reference No. A1797-6/7 BFL4026 Note on usage : Since the BFL4026 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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