BFL4037

Ordering number : ENA1831 BFL4037 SANYO Semiconductors DATA SHEET BFL4037 Features • • • N-Channel Silicon MOSFET General-Purpose Switching Device Applications ON-resistance RDS(on)=0.33Ω (typ.) Input capacitance Ciss=1200pF (typ.) 10V drive Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single Pulse) *4 Avalanche Current *5 Symbol VDSS VGSS IDc*1 IDpack*2 IDP PD Tch Tstg EAS IAV Limited only by maximum temperature Tch=150°C Tc=25°C (SANYO’s ideal heat dissipation condition)*3 PW≤10μs, duty cycle≤1% Tc=25°C (SANYO’s ideal heat dissipation condition)*3 Conditions Ratings 500 ±30 16 11 60 2.0 40 150 --55 to +150 159 16 Unit V V A A A W W °C °C mJ A Note : *1 Shows chip capability *2 Package limited *3 SANYO’s condition is radiation from backside. The method is applying silicone grease to the backside of the device and attaching the device to water-cooled radiator made of aluminium. *4 VDD=99V, L=1mH, IAV=16A (Fig.1) *5 L≤1mH, single pulse Package Dimensions unit : mm (typ) 7509-002 10.0 3.2 3.5 7.2 4.5 2.8 Product & Package Information • Package : TO-220FI(LS) • JEITA, JEDEC : SC-67, SOT-186A, TO-220F • Minimum Packing Quantity : 100 pcs./bag or 50pcs./magazine Marking Electrical Connection 2 16.1 16.0 FL4037 LOT No. 0.9 1.2 0.75 14.0 0.6 3.6 1.2 0.7 1 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) 3 2.55 2.55 http://semicon.sanyo.com/en/network 90810QB TK IM TC-00002471 No. A1831-1/5 BFL4037 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain “Miller” Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD trr Qrr Conditions ID=10mA, VGS=0V VDS=400V, VGS=0V VGS=±24V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=8A ID=8A, VGS=10V VDS=30V, f=1MHz VDS=30V, f=1MHz VDS=30V, f=1MHz See Fig.2 See Fig.2 See Fig.2 See Fig.2 VDS=200V, VGS=10V, ID=16A VDS=200V, VGS=10V, ID=16A VDS=200V, VGS=10V, ID=16A IS=16A, VGS=0V See Fig.3 IS=16A, VGS=0V, di/dt=100A/μs Ratings min 500 100 ±10 3 4.5 9 0.33 1200 250 55 26.5 78 146 57 48.6 8.2 27.4 0.95 600 5000 1.3 0.43 5 typ max Unit V μA μA V S Ω pF pF pF ns ns ns ns nC nC nC V ns nC Fig.1 Avalanche Resistance Test Circuit D ≥50Ω RG G BFL4037 10V 0V 50Ω S VDD L Fig.2 Switching Time Test Circuit 10V 0V VIN VDD=200V VIN PW=10μs D.C.≤0.5% G D ID=8A RL=25Ω VOUT BFL4037 P.G RGS=50Ω S Fig.3 Reverse Recovery Time Test Circuit BFL4037 D 500μH G S VDD=50V Driver MOSFET No. A1831-2/5 BFL4037 45 ID -- VDS Tc=25°C 15V 10V 45 ID -- VGS VDS=20V Tc= --25°C 25°C 40 35 40 35 Drain Current, ID -- A 30 25 20 15 10 5 0 0 5 10 15 20 8V Drain Current, ID -- A 30 25 20 15 10 5 75°C 6V VGS=5V 25 30 IT11732 0 0 2 4 6 8 10 12 14 16 18 20 Drain-to-Source Voltage, VDS -- V 1.2 RDS(on) -- VGS Gate-to-Source Voltage, VGS -- V 1.0 RDS(on) -- Tc IT11733 ID=8A Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 1.0 0.9 Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --50 --25 0 25 50 75 100 125 150 0.8 0.6 Tc=75°C 0.4 =8 ID A =1 S , VG 0V 25°C --25°C 0.2 0 3 5 7 9 11 13 15 IT11734 Gate-to-Source Voltage, VGS -- V 3 | yfs | -- ID Case Temperature, Tc -- °C 5 3 2 10 7 5 3 2 1.0 7 5 3 2 IS -- VSD IT11735 Forward Transfer Admittance, | yfs | -- S 2 VDS=10V VGS=0V 7 5 3 2 2 = Tc --2 5°C 75 °C Source Current, IS -- A 10 5°C 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 3 2 0.01 0.2 0.4 0.6 --25°C 0.8 1.0 0.1 7 5 Tc=7 5°C 25°C 1.0 1.2 1.4 IT11737 Drain Current, ID -- A 1000 7 SW Time -- ID IT11736 10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 Ciss, Coss, Crss -- VDS Diode Forward Voltage, VSD -- V Switching Time, SW Time -- ns 5 3 2 VDD=200V VGS=10V f=1MHz Ciss, Coss, Crss -- pF Ciss td (off) 100 7 5 3 2 10 0.1 Coss tr tf td(on) Crss 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 10 0 5 10 15 20 25 30 35 40 45 50 Drain Current, ID -- A IT11738 Drain-to-Source Voltage, VDS -- V IT11739 No. A1831-3/5 BFL4037 10 9 VGS -- Qg VDS=200V ID=16A Drain Current, ID -- A 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 ASO IDP=60A (PW≤10μs) IDc(*1)=16A IDpack(*2)=11A DC Gate-to-Source Voltage, VGS -- V 8 7 6 5 4 3 2 1 0 0 10 20 30 40 50 IT11740 10 10 1m s ms 10 μs 0μ s 10 op 0m s n Operation in this area is limited by RDS(on). era tio 0.1 7 5 3 2 Tc=25°C Single pulse 0.01 0.1 2 3 5 7 1.0 *1. Shows chip capability *2. SANYO's ideal heat dissipation condition 23 5 7 10 23 5 7 100 23 57 Total Gate Charge, Qg -- nC 2.5 PD -- Ta Drain-to-Source Voltage, VDS -- V 45 PD -- Tc IT15944 Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 0 20 40 60 80 100 120 140 160 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 140 160 2.0 1.5 1.0 0.5 0 Ambient Temperature, Ta -- °C 120 EAS -- Ta IT11730 Case Temperature, Tc -- °C IT11742 Avalanche Energy derating factor -- % 100 80 60 40 20 0 0 25 50 75 100 125 150 175 IT10478 Ambient Temperature, Ta -- °C No. A1831-4/5 BFL4037 Note on usage : Since the BFL4037 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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