BUX80

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors BUX80 DESCRIPTION ·With TO-3 package ·High voltage ·Fast switching speed APPLICATIONS ·Switching regulators ·Motor control ·High frequency and efficiency converters PINNING(see fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL VCBO VCEO VEBO IC ICM IB PT Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 800 400 10 10 15 5 100 150 -65~150 UNIT V V V A A A W THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case MAX 1.1 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter sustaining voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain CONDITIONS IC=0.1A; IB=0 IC=5 A;IB=1 A IC=8 A;IB=2.5 A IC=5 A;IB=1 A IC=8 A;IB=2.5 A VCE=800V;VBE=0 TC=125 VEB=10V; IC=0 IC=1.2A ; VCE=5V 30 MIN 400 BUX80 SYMBOL VCEO(SUS) VCEsat-1 VCEsat-2 VBEsat-1 VBEsat-2 ICES IEBO hFE TYP. MAX UNIT V 1.5 3.0 1.4 1.8 1.0 3.0 10 V V V V mA mA Switching times ton ts tf Turn-on time Storage time Fall time IC=5A ;IB1=1A; IB2=-2A VCC=-250V 0.5 3.5 0.5 µs µs µs 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE BUX80 Fig.2 Outline dimensions 3