BUX80

BUX80 MECHANICAL DATA Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR 38.61 (1.52) 39.12 (1.54) 0.97 (0.060) 1.10 (0.043) 22.23 (0.875) max. 7.92 (0.312) 12.70 (0.50) 29.9 (1.177) 30.4 (1.197) 16.64 (0.655) 17.15 (0.675) 1 2 Applications The BUX80 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and high switching speed. This device is especially suitable for switching – control amplifiers, power gates, switching regulators, power-switching circuits converters, inverters and control circuits. 3 (case) 3.84 (0.151) 4.09 (0.161) TO–204AA (TO–3) PIN 1 — Base PIN 2 — Emitter Case is Collector. ABSOLUTE MAXIMUM RATINGS (Tj = 25°C unless otherwise stated) VCES VCER VCEO VEBO IC ICM IB Ptot TSTG TJ Collector – Emitter Voltage Collector – Emitter Voltage Collector – Emitter Voltage Emitter – Base Voltage Collector Current Peak Collector Current Base Current Total Power Dissipation Tcase = 40°C Storage Temperature Range Maximum Junction Temperature VBE = 0 RBE = 50Ω IB = 0 IC = 0 800V 500V 400V 10V 10A 15A 5A 100W -65 to +150°C +150°C Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6049 Issue 1 BUX80 ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise stated) Parameter VCEO(BR) VCER(BR) VCE(sat) VBE(sat)* IEBO hFE ton ts tf Collector - Emitter Breakdown Voltage Collector - Emitter Breakdown Voltage Collector – Emitter Saturation Voltage Base – Emitter Saturation Voltage Emitter Cut-off Current DC Current Gain Turn–On Time Storage Time Fall Time Test Conditions IC = 100mA IC = 100mA IC = 5A IC = 8A IC = 5A IC = 8A IC = 0 IC = 1.2A IC = 5A IB1 =1A IC = 5A IB1 =1A IB = 0 RBE = 50Ω IB = 1A IB = 2.5A IB = 1A IB = 2.5A VBE = 10V VCE = 5V VCC = 250V IB2 = -2A VCC =-250V IB2 = -2A Min. 400 500 Typ. Max. Unit V V 1.5 3 1.4 1.8 10 mA — 0.5 3.5 0.5 µs µs V 30 THERMAL CHARACTERISTICS Rth j-mb Thermal Resistance Junction to Case 1.1 °C/W Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Document Number 6049 Issue 1