SLVU2.8-8.TB

EPD TVS Diode Array For ESD and Latch-Up Protection PROTECTION PRODUCTS Description The SLV series of transient voltage suppressors are designed to protect low voltage, state-of-the-art CMOS semiconductors from transients caused by electrostatic discharge (ESD), cable discharge events (CDE), lightning and other induced voltage surges. The devices are constructed using Semtech’s proprietary EPD process technology. The EPD process provides low standoff voltages with significant reductions in leakage currents and capacitance over siliconavalanche diode processes. The SLVU2.8-8 features integrated low capacitance compensation diodes that reduce the maximum capacitance to 8pF per line. This, combined with low leakage current, means signal integrity is preserved in high-speed applications such as 10/100 Ethernet. The SLVU2.8-8 is in an SO-8 package and may be used to protect four high-speed line pairs. The layout of the device minimizes trace inductance and reduces voltage overshoot associated with ESD events. The low clamping voltage of the SLVU2.8-8 minimizes the stress on the protected IC. The SLV series TVS diodes will meet the surge requirements of IEC 61000-4-2 (ESD), IEC61000-4-5 (Lightning), and ETSI ETS 300 386. SLVU2.8-8 PRELIMINARY Features 600 Watts peak pulse power (tp = 8/20µs) Transient protection for high speed data lines to IEC 61000-4-2 (ESD) 15kV (air), 8kV (contact) IEC 61000-4-4 (EFT) 40A (tp = 5/50ns) IEC 61000-4-5 (Lightning) 24A (tp = 8/20µs) Protects four line pairs (eight lines) Comprehensive pin out for easy board layout Low capacitance High peak pulse current (30A, 8/20µs) Low leakage current Low operating and clamping voltages Solid-state EPD TVS process technology Mechanical Characteristics JEDEC SO-8 package Molding compound flammability rating: UL 94V-0 Marking : Part number, date code, logo Packaging : Tape and Reel per EIA 481 Applications 10/100 Ethernet WAN/LAN Equipment Switching Systems DSLAMs Desktops, Servers, & Notebooks Instrumentation Base Stations Analog Inputs Circuit Diagram (Each Line) Schematic & PIN Configuration SO-8 (Top View) Revision 1/18/2008 1 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Absolute Maximum Rating R ating Peak Pulse Power (tp = 8/20µs) Peak Pulse Current (tp = 8/20µs) ESD Per IEC 61000-4-2 (Air) ESD Per IEC 61000-4-2 (Contact) Op erating Temp erature Storage Temp erature Symbol Pp k IP P ESD TJ TSTG Value 600 30 30 25 -55 to +125 -55 to +150 Units Watts A kV °C °C Electrical Characteristics (T=25oC) SLVU2.8-8 Parameter Reverse Stand-Off Voltage Punch-Through Voltage Snap-Back Voltage Reverse Leakage Current Clamping Voltage Clamping Voltage Clamping Voltage Junction Capacitance Symbol VRWM V PT VSB IR VC VC VC Cj IPT = 2µA ISB = 50mA VRWM = 2.8V, T=25°C (Each Line) IPP = 1A, tp = 8/20µs (Each Line) IPP = 24A, tp = 8/20µs (Each Line) IPP = 30A, tp = 8/20µs (Each Line) VR = 0V, f = 1MHz (Each Line) 3.0 2.8 .100 1 4.6 15 17 8 Conditions Minimum Typical Maximum 2.8 Units V V V µA V V V pF  2008 Semtech Corp. 2 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Typical Characteristics Non-Repetitive Peak Pulse Power vs. Pulse Time 110 10 PRELIMINARY Power Derating Curve 100 90 % of Rated Power or IPP 80 70 60 50 40 30 20 10 0 Peak Pulse Power - PPP (kW) 1 0.1 0.01 0.1 1 10 Pulse Duration - tp (µs) 100 1000 0 25 50 75 100 o 125 150 Ambient Temperature - TA ( C) Pulse Waveform 110 100 90 80 Percent of IPP 70 60 50 40 30 20 10 0 0 5 10 15 Time (µs) 20 25 30 0 Clamping Voltage vs. Peak Pulse Current Waveform Parameters: tr = 8µs td = 20µs 16 Clamping Voltage Vc - (V) 12 e -t 8 td = IPP/2 4 Waveform Parameters: tr = 8µs td = 20µs 0 5 10 15 20 25 30 35 Peak Pulse Current Ipp - (A) Normalized Capacitance vs. Reverse Voltage 1.4 1.2 C J(VR) / C J(VR=0) 1 0.8 0.6 0.4 0.2 f = 1 MHz 0 0 0.5 1 1.5 2 2.5 3 Reverse Voltage - VR (V) CH1 S21 LOG Insertion Loss S21 10 dB/ REF 0 dB START .030 000 MHz STOP 3 000. 000 000 MHz  2008 Semtech Corp. 3 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Applications Information Device Connection for Protection of Eight Data Lines Electronic equipment is susceptible to transient disturbances from a variety of sources including: ESD to an open connector or interface, direct or nearby lightning strikes to cables and wires, and charged cables “hot plugged” into I/O ports. The SLVU2.8-8 is designed to protect sensitive components from damage and latchup which may result from such transient events. The SLVU2.8-8 can be configured to protect four highspeed line pairs differentially, or four lines to ground (common mode). The device is connected as follows: 1 . Differential Protection of four line pairs: Line pairs are connected at pins 1 and 2, 3 and 4, 5 and 6, and 7 and 8. Circuit Board Layout Recommendations for Suppression of ESD. Good circuit board layout is critical for the suppression of ESD induced transients. The following guidelines are recommended: Place the device near the input terminals or connectors to restrict transient coupling. Minimize the path length between the TVS and the protected line. Minimize all conductive loops including power and ground loops. The ESD transient return path to ground should be kept as short as possible. Never run critical signals near board edges. Use ground planes whenever possible. Differential Protection of Four Line Pairs From Connector SLVU2.8-8 Circuit Diagram 1 8 2 7 3 6 4 5  2008 Semtech Corp. 4 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Typical Applications PRELIMINARY One SLVU2.8.8 Protecting Two 10/100 Ethernet Port  2008 Semtech Corp. 5 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Applications Information (continued) EPD TVS™ Characteristics The SLVU2.8-8 is constructed using Semtech’s proprietary EPD technology. The structure of the EPD TVS is vastly different from the traditional pn-junction devices. At voltages below 5V, high leakage current and junction capacitance render conventional avalanche technology impractical for most applications. However, by utilizing the EPD technology, the SLVU2.8-8 can effectively operate at 2.8V while maintaining excellent electrical characteristics. The EPD TVS employs a complex nppn structure in contrast to the pn structure normally found in traditional silicon-avalanche TVS diodes. The EPD mechanism is achieved by engineering the center region of the device such that the reverse biased junction does not avalanche, but will “punch-through” to a conducting state. This structure results in a device with superior dc electrical parameters at low voltages while maintaining the capability to absorb high transient currents. The IV characteristic curve of the EPD device is shown in Figure 1. The device represents a high impedance to the circuit up to the working voltage (VRWM). During a transient event, the device will begin to conduct as it is biased in the reverse direction. When the punchthrough voltage (VPT) is exceeded, the device enters a low impedance state, diverting the transient current away from the protected circuit. When the device is conducting current, it will exhibit a slight “snap-back” or negative resistance characteristic due to its structure. This must be considered when connecting the device to a power supply rail. To return to a non-conducting state, the current through the device must fall below the snap-back current (approximately < 50mA). IPP ISB IPT VBRR IR VRWM V V VC SB PT IBRR EPD TVS VI Characteristic Curve  2008 Semtech Corp. 6 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Applications Information - SPICE Model PRELIMINARY 0.8 nH SLVU2.8-8 Spice Model SLVU2.8-8 Spice Parameters Parameter IS BV VJ RS IB V CJO TT M N EG Unit Amp Volt Volt Ohm Amp Farad sec --eV D1 (T VS) 6.09E-14 3.4 13.8 0.389 10E-3 24.75E-12 2.541E-9 0.145 1.1 1.11 D2 (LCR D) 8.57E-9 420 0.62 0.15 10E-3 3.15E-12 2.541E-9 0.113 1.1 1.11  2008 Semtech Corp. 7 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Outline Drawing - SO-8 A N 2X E/2 E1 E 1 ccc C 2X N/2 TIPS 2 e/2 B D aaa C SEATING PLANE A2 A C bxN bbb A1 C A-B D SIDE VIEW GAGE PLANE 0.25 e D h h H DIM c A A1 A2 b c D E1 E e h L L1 N 01 aaa bbb ccc DIMENSIONS INCHES MILLIMETERS MIN NOM MAX MIN NOM MAX .053 .069 .010 .004 .065 .049 .012 .020 .010 .007 .189 .193 .197 .150 .154 .157 .236 BSC .050 BSC .010 .020 .016 .028 .041 (.041) 8 8° 0° .004 .010 .008 1.35 1.75 0.10 0.25 1.25 1.65 0.31 0.51 0.17 0.25 4.80 4.90 5.00 3.80 3.90 4.00 6.00 BSC 1.27 BSC 0.25 0.50 0.40 0.72 1.04 (1.04) 8 0° 8° 0.10 0.25 0.20 L (L1) DETAIL 01 A SEE DETAIL A NOTES: 1. CONTROLLING DIMENSIONS ARE IN MILLIMETERS (ANGLES IN DEGREES). 2. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H3. DIMENSIONS "E1" AND "D" DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 4. REFERENCE JEDEC STD MS-012, VARIATION AA. Land Pattern - SO-8 X DIM (C) G Z C G P X Y Z DIMENSIONS INCHES MILLIMETERS (.205) .118 .050 .024 .087 .291 (5.20) 3.00 1.27 0.60 2.20 7.40 Y P NOTES: 1. THIS LAND PATTERN IS FOR REFERENCE PURPOSES ONLY. CONSULT YOUR MANUFACTURING GROUP TO ENSURE YOUR COMPANY'S MANUFACTURING GUIDELINES ARE MET. 2. REFERENCE IPC-SM-782A, RLP NO. 300A.  2008 Semtech Corp. 8 www.semtech.com SLVU2.8-8 PROTECTION PRODUCTS Marking PRELIMINARY SC YYWW SLVU2.8 -8 1 Top View Note: (1) yyww = Date Code Ordering Information Part Number SLVU2.8-8.TB SLVU2.8-8.TBT SLVU2.8-8 SLVU2.8-8.T (1) (1) Working Voltage 2.8V 2.8V 2.8V 2.8V Qty/Pkg 500/Reel 500/Reel 98/Tube 98/Tube R eel Size 7 Inch 7 Inch N /A N /A Note: (1) Lead-Free Product Contact Information Semtech Corporation Protection Products Division 200 Flynn Road, Camarillo, CA 93012 Phone: (805)498-2111 FAX (805)498-3804 www.semtech.com  2008 Semtech Corp. 9