MMFTN170

MMFTN170 N-Channel Enhancement Mode Field Effect Transistor Feature • Voltage controlled small signal switch • High saturation current capability Drain Gate Source 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1 MΩ) Gate-Source Voltage Drain Current - Continuous Drain Current - Pulsed Total Power Dissipation Operating and Storage Temperature Range Symbol VDSS VDGR VGSS ID Ptot Tj, Ts Value 60 60 ± 20 500 800 300 - 55 to + 150 Unit V V V mA mW O C Characteristics at Ta = 25 OC Parameter Drain-Source Breakdown Voltage at ID = 100 µA Zero Gate Voltage Drain Current at VDS = 25 V Gate-Body Leakage, Forward at VGS = 15 V Gate-Source Threshold Voltage at VDS = VGS, ID = 1 mA Static Drain-Source On-Resistance at VGS = 10 V, ID = 200 mA Forward Transconductance at VDS ≥ 2 VDS(on), ID = 200 mA Input Capacitance at VDS = 10 V, f = 1 MHz Output Capacitance at VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 10 V, f = 1 MHz Turn-On Time at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω Turn-Off Delay Time at VDD = 25 V, ID = 500 mA, VGS = 10 V, RGEN = 50 Ω Symbol V(BR)DSS IDSS IGSSF VGS(th) RDS(on) gFS Ciss Coss Crss t(on) t(off) Min. 60 0.8 Typ. 320 Max. 0.5 10 3 5 40 30 10 10 10 Unit V µA nA V Ω mS pF pF pF ns ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 10/02/2007