MMFTN170

MMFTN170 MMFTN170 N Version 2011-01-28 Power dissipation – Verlustleistung 2.9 ±0.1 0.4 3 1.3±0.1 1.1 N-Channel Enhancement Mode Field Effect Transistor N-Kanal Feldeffekt Transistor – Anreicherungstyp N 300 mW SOT-23 (TO-236) 0.01 g Type Code 1 1.9 2 2.5 max Plastic case Kunststoffgehäuse Weight approx. – Gewicht ca. Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Dimensions - Maße [mm] 1=G 2=S 3=D Maximum ratings (TA = 25°C) Drain-Source-voltage – Drain-Source-Spannung Drain-Gate-voltage – Drain-Gate-Spannung Gate-Source-voltage continuos Gate-Source-Spannung dauernd Power dissipation – Verlustleistung Drain current continuos – Drainstrom (dc) Peak Drain current – Drain-Spitzenstrom Junction temperature – Sperrschichttemperatur Storage temperature – Lagerungstemperatur G short RGS < 1 MΩ VDSS VDGR VGSS Ptot ID IDM Tj TS Grenzwerte (TA = 25°C) MMFTN170 60 V 60 V ± 20 V 300 mW 500 mA 800 mA 150°C -55…+150°C © Diotec Semiconductor AG http://www.diotec.com/ 1 MMFTN170 Characteristics (Tj = 25°C) Drain-Source breakdown voltage – Drain-Source-Durchbruchspannung ID = 100 µA Drain-Source leakage current – Drain-Source Leckstrom VDS = 25 V Gate-Body leakage current – Gate-Substrat Leckstrom VGS = 15 V Gate-Source threshold voltage – Gate-Source Schwellspannung VGS = VDS, ID = 1 mA VGS = 10 V, ID = 200 mA Forward Transconductance – Übertragungssteilheit VDS > 2 VDS(on), ID = 200 mA Input Capacitance – Eingangskapazität VDS = 10 V, f = 1 MHz Output Capacitance – Ausgangskapazität VDS = 10 V, f = 1 MHz Reverse Transfer Capacitance – Rückwirkungskapazität VDS = 10 V, f = 1 MHz Turn-On Time – Einschaltzeit VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω Turn-Off Delay Time – Ausschaltverzögerung VDD = 25 V, ID = 500 mA, VGS = 10 V, RG = 50 Ω td(off) 10 ns td(on) 10 ns Crss 10 pF Coss 30 pF Ciss 40 pF VGS(th) RDS(on) gFS 320 mS 0.8 V 3V 5Ω Drain-Source on-state resistance – Drain-Source Einschaltwiderstand IGSS 10 nA V(BR)DSS G short IDSS 0.5 µA 60 V Kennwerte (Tj = 25°C) Min. Typ. Max. 2 http://www.diotec.com/ © Diotec Semiconductor AG