MMFTN123

MMFTN123 N-Channel Logic Level Enhancement Mode Field Effect Transistor 1. Gate 2. Source 3. Drain SOT-23 Plastic Package Drain Gate Source Absolute Maximum Ratings (Ta = 25 OC unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Peak Drain Current Total Power Dissipation Junction Temperature Storage Temperature Range Symbol VDSS VGSS ID IDM Ptot Tj Tstg Value 100 ± 20 170 680 360 150 -65 to +150 Unit V V mA mA mW O C C O Thermal Characteristics Parameter Thermal Resistance from Juntion to Ambient 1) Symbol Rthj-a Value 500 1) Unit K/W Device mounted on a printed-circuit board. SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 03/06/2006 MMFTN123 Characteristics at Ta = 25 OC unless otherwise specified Parameter Drain-Source Breakdown Voltage at ID = 250 µA Gate-Source Threshold Voltage at VGS = VDS, ID = 1 mA Drain-Source Leakage Current at VDS = 100 V at VDS = 20 V Gate-Source Leakage Current at VGS = ± 20 V Drain-Source On-State Resistance at VGS = 10 V, ID = 170 mA at VGS = 4.5 V, ID = 170 mA Input Capacitance at VDS = 25 V, f = 1 MHz Output Capacitance at VDS = 25 V, f = 1 MHz Reverse Transfer Capacitance at VDS = 25 V, f = 1 MHz Turn-On Delay Time at VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω Turn-On Rise Time at VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω Turn-Off Delay Time at VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω Turn-Off Fall Time at VDD = 30 V, ID = 280 mA, VGS = 10 V, RG = 6 Ω Ciss Coss Crss td(on) tr td(off) tf RDS(ON) 73 7 3.4 6 10 3.4 18 31 5 pF pF pF Ω IGSS IDSS 1 10 ± 50 µA nA nA Symbol V(BR)DSS VGSth Min. 100 0.8 Typ. Max. 2 Unit V V ns ns ns ns SEMTECH ELECTRONICS LTD. ® (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) Dated: 03/06/2006