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STB23NM60N

STB23NM60N

  • 厂商:

    STMICROELECTRONICS(意法半导体)

  • 封装:

    SOT404

  • 描述:

    MOSFET N-CH 600V 19A D2PAK

  • 数据手册
  • 价格&库存
STB23NM60N 数据手册
STB23NM60N-STF23NM60N STI23NM60N-STP23NM60N-STW23NM60N N-channel 600 V - 0.150 Ω - 19 A - D2PAK - I2PAK - TO-220/FP TO-247, second generation MDmesh™ Power MOSFET Features VDSS (@Tjmax) Type RDS(on) max ID STB23NM60N 19 A STI23NM60N 19 A 3 12 I²PAK 19 A STW23NM60N 19 A r P e 3 1 2 let TO-220 ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance o s b -O Figure 1. ) s ( ct Switching applications 3 TO-247 1. Limited only by maximum temperature allowed ■ u d o 2 1 STP23NM60N Application ) s ( ct D²PAK 19 A (1) 0.180 Ω 650 V STF23NM60N 3 1 3 1 2 TO-220FP Internal schematic diagram u d o Description r P e This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. t e l o s b O Table 1. Device summary Order codes Marking Package Packaging STB23NM60N 23NM60N D²PAK Tape and reel STI23NM60N 23NM60N I²PAK Tube STF23NM60N 23NM60N TO-220FP Tube STP23NM60N 23NM60N TO-220 Tube STW23NM60N 23NM60N TO-247 Tube March 2008 Rev 3 1/19 www.st.com 19 Contents STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit ................................................ 9 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 2/19 s b O STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter D²PAK/I²PAK TO-220FP TO-220/TO-247 Unit VDS Drain-source voltage (VGS=0) 600 V VGS Gate-source voltage ± 25 V ID Drain current (continuous) at TC = 25 °C 19 19 (1) ID Drain current (continuous) at TC = 100 °C 11.7 11.7 (1) IDM (2) Drain current (pulsed) PTOT Total dissipation at TC = 25 °C dv/dt (3) e t e ol Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj )- Pr 150 s b O Max. operating junction temperature A ct A 76 (1) A 35 W u d o 76 (s) 15 V/ns -- 2500 V -55 to 150 °C 150 °C s ( t c 1. Limited only by maximum temperature allowed 2. Pulse width limited by safe operating area u d o 3. ISD ≤ 19 A, di/dt ≤400 A/µs, VDD =80% V(BR)DSS r P e Table 3. t e l o Symbol s b O Thermal data Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-amb max Rthj-pcb Thermal resistance junction-pcb max Tl Maximum lead temperature for soldering purposes TO-220 I²PAK TO-247 D²PAK 0.83 62.5 -- -- TO-220FP Unit 3.6 °C/W 50 -- 62.5 °C/W -- 30 -- °C/W 300 °C 3/19 Electrical ratings Table 4. STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Avalanche characteristics Symbol Parameter IAS Avalanche current, repetitive or not-repetitive (pulse width limited by Tj max) EAS Single pulse avalanche energy (starting Tj= 25 °C, ID = IAS, VDD = 50 V) Max value Unit 9 A 700 mJ ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 4/19 s b O STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N 2 Electrical characteristics Electrical characteristics (TCASE=25°C unless otherwise specified) Table 5. On/off states Symbol V(BR)DSS dv/dt(1) 1. Parameter Drain-source breakdown voltage Drain-source voltage slope VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA RDS(on) Static drain-source on resistance VGS= 10 V, ID= 9.5 A VDS = Max rating,@125 °C ct gfs(1) Forward transconductance Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance u d o Pr 2 Unit V 3 V/ns ) s ( ct u d o r P e t e l o 1 100 µA µA 100 nA 4 V Ω 0.150 0.180 s b O Characteristic value at turn off on inductive load ) (s Max. VDS = Max rating, VGS = ±20 V Parameter Typ. 30 VGS = 10 V Gate body leakage current (VDS = 0) e t e ol Test conditions VDS =15 V, ID= 9.5 A VDS = 50 V, f =1 MHz, VGS = 0 Min. Typ. Max. Unit 17 S 2050 140 8 pF pF pF Equivalent output capacitance VGS = 0, VDS = 0 to 480 V 260 pF Rg Gate input resistance f=1 MHz Gate DC Bias=0 Test signal level=20 mV open drain 4 Ω Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge 60 10 30 nC nC nC Coss eq.(2) 1. VDD = 480 V, ID = 19 A, IGSS Dynamic Min. 600 Zero gate voltage drain current (VGS = 0) Symbol O ID = 1 mA, VGS= 0 IDSS Table 6. bs Test conditions VDD = 480 V, ID = 19 A VGS = 10 V (see Figure 19) Pulsed: pulse duration = 300 µs, duty cycle 1.5% 2. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 5/19 Electrical characteristics Table 7. STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Switching times Symbol td(on) tr td(off) tf Parameter Turn-on delay time Rise time Turn-off delay time Fall time Table 8. Test conditions RG = 4.7 Ω, VGS = 10 V (see Figure 18) Parameter Test conditions VSD(2) Forward on voltage ISD = 19 A, VGS=0 Reverse recovery time Reverse recovery charge Reverse recovery current ISD =19 A, di/dt =100 A/µs, VDD = 100 V (see Figure 20) Reverse recovery time Reverse recovery charge Reverse recovery current VDD = 100 V di/dt =100 A/µs, ISD = 19 A Tj = 150 °C (see Figure 20) trr Qrr IRRM 1. Pulse width limited by safe operating area ) (s t c u d o r P e t e l o e t e ol s b O 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 6/19 Min. Source-drain current Source-drain current (pulsed) IRRM Max. Unit 25 15 90 36 VDD = 300 V, ID = 9.5 A, ISD ISDM(1) trr Qrr Typ. ns ns ns ns Source drain diode Symbol s b O Min. Typ. Max. Unit ) s ( ct Pr u d o 19 76 A A 1.3 V 470 7 29 ns µC A 600 9 29 ns µC A STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 D2PAK - I2PAK Figure 3. Electrical characteristics Thermal impedance for TO-220 D2PAK - I2PAK ) s ( ct u d o Figure 4. Safe operating area for TO-220FP ) (s Figure 5. r P e Thermal impedance for TO-220FP t e l o s b O t c u d o r t e l o P e Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 s b O 7/19 Electrical characteristics Figure 8. STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Output characteristics Figure 9. Transfer characteristics ) s ( ct u d o Figure 10. Transconductance Figure 11. Static drain-source on resistance r P e t e l o ) (s s b O t c u d o r P e Figure 12. Gate charge vs gate-source voltage Figure 13. Capacitance variations t e l o s b O 8/19 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Figure 14. Normalized gate threshold voltage vs temperature Figure 16. Source-drain diode forward characteristics Electrical characteristics Figure 15. Normalized on resistance vs temperature ) s ( ct u d o Figure 17. Normalized BVDSS vs temperature r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 9/19 Test circuit 3 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Test circuit Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit ) s ( ct u d o r P e Figure 20. Test circuit for inductive load Figure 21. Unclamped inductive load test switching and diode recovery times circuit t e l o ) (s s b O t c u d o r P e t e l o Figure 22. Unclamped inductive waveform s b O 10/19 Figure 23. Switching time waveform STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com ) s ( ct u d o r P e t e l o ) (s s b O t c u d o r P e t e l o s b O 11/19 Package mechanical data STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q 3.75 2.65 d o r s b O 12/19 Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 t c u t e l o Max 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 ) (s P e Typ 4.40 0.61 1.14 0.48 15.25 s b O t e l o r P e 3.85 2.95 u d o 0.147 0.104 ) s ( ct 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Package mechanical data TO-220FP mechanical data mm. DIM. Min. A 4.4 inch Typ. Max. Min. Typ. 4.6 0.173 0.181 Max. 0.106 B 2.5 2.7 0.098 D 2.5 2.75 0.098 0.108 E 0.45 0.7 0.017 0.027 F 0.75 1 0.030 F1 1.15 1.7 0.045 F2 1.15 1.7 0.045 G 4.95 5.2 0.195 G1 2.4 2.7 0.094 H 10 10.4 0.393 1.126 1.204 .0385 0.417 L2 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 L7 9 Ø 3 9.3 ) (s 3.2 A u d o 0.106 0.409 0.630 0.114 0.141 0.626 0.645 0.354 0.366 0.118 0.126 E t c u 0.067 0.204 t e l o s b O 16.4 0.067 r P e 16 L3 ) s ( ct 0.039 B D d o r P e let L6 G G1 F F1 L7 F2 H O o s b L3 L2 L5 1 23 L4 13/19 Package mechanical data STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N TO-262 (I2PAK) mechanical data mm. inch DIM. Min. Typ. Max. 4.40 4.60 0.173 0.181 2.40 2.72 0.094 0.107 b 0.61 0.88 0.024 0.034 b1 1.14 1.70 0.044 0.066 c 0.49 0.70 0.019 c2 1.23 1.32 0.048 D 8.95 9.35 0.352 e 2.40 2.70 0.094 e1 4.95 5.15 0.194 E 10 10.40 0.393 L 13 14 L1 3.50 3.93 L2 1.27 1.40 d o r P e 14/19 Typ. A e t e l so t c u s b O Min. A1 ) (s t e l o Max. b O 0.511 ) s ( ct 0.027 0.052 Pr u d o 0.368 0.106 0.202 0.410 0.551 0.137 0.154 0.050 0.055 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Package mechanical data D²PAK (TO-263) mechanical data mm inch Dim Min A A1 b b2 c c2 D D1 E E1 e e1 H J1 L L1 L2 R V2 Typ 4.40 0.03 0.70 1.14 0.45 1.23 8.95 7.50 10 8.50 Max Min 4.60 0.23 0.93 1.70 0.60 1.36 9.35 0.173 0.001 0.027 0.045 0.017 0.048 0.352 0.295 0.394 0.334 10.40 Typ u d o 0.1 5.28 15.85 2.69 2.79 1.40 1.75 r P e t e l o bs 0.4 0° 8° 0.192 0.590 0.099 0.090 0.05 0.051 ) s ( ct 0.409 2.54 4.88 15 2.49 2.29 1.27 1.30 Max 0.181 0.009 0.037 0.067 0.024 0.053 0.368 0.208 0.624 0.106 0.110 0.055 0.069 0.016 0° 8° O ) s ( t c u d o r P e t e l o s b O 0079457_M 15/19 Package mechanical data STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N TO-247 Mechanical data mm. Dim. A Min. 4.85 A1 2.20 Typ 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 E 15.45 ) s ( ct 5.45 L 14.20 L1 3.70 e t e l o s b L2 øP 3.55 øR 4.50 O ) s ( t c u d o r P e 16/19 o r P 15.75 14.80 4.30 18.50 S s b O du 20.15 e t e l o Max. 5.15 5.50 3.65 5.50 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N 5 Packaging mechanical data Packaging mechanical data D2PAK FOOTPRINT ) s ( ct u d o r P e TAPE AND REEL SHIPMENT REEL MECHANICAL DATA t e l o DIM. ) (s t c u d o r TAPE MECHANICAL DATA P e let DIM. MIN. MAX. inch MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T MAX. inch MIN. MAX. 330 12.992 13.2 0.504 0.520 0.059 0795 26.4 0.960 1.039 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 MAX. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 o s b O mm s b O mm MIN. K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 R 50 0.075 0.082 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 0.933 0.956 * on sales type 17/19 Revision history 6 STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N Revision history Table 9. Document revision history Date Revision Changes 18-Sep-2007 1 First release 14-Dec-2007 2 Modified value on Table 2: Absolute maximum ratings 04-Feb-2008 3 Updated Table 3: Thermal data on page 3 ) s ( ct u d o r P e t e l o ) (s t c u d o r P e t e l o s b O 18/19 s b O STB23NM60N-STF/I23NM60N-STP23NM60N-STW23NM60N ) s ( ct Please Read Carefully: u d o Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. r P e All ST products are sold pursuant to ST’s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. t e l o No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. ) (s s b O UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. t c u UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK. d o r P e t e l o Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. s b O ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 19/19
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