STB30N65DM6AG

STB30N65DM6AG Datasheet Automotive-grade N-channel 650 V, 102 mΩ typ., 28 A MDmesh DM6 Power MOSFET in a D²PAK package Features TAB 2 1 Order code VDS RDS(on) max. ID STB30N65DM6AG 650 V 115 mΩ 28 A 3 D²PAK D(2, TAB) G(1) • • • AEC-Q101 qualified Fast-recovery body diode Lower RDS(on) per area vs previous generation • • • • Low gate charge, input capacitance and resistance 100% avalanche tested Extremely high dv/dt ruggedness Zener-protected Applications S(3) AM01476v1_tab • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters. Product status link STB30N65DM6AG Product summary Order code STB30N65DM6AG Marking 30N65DM6 Package D²PAK Packing Tape and reel DS13770 - Rev 1 - June 2021 For further information contact your local STMicroelectronics sales office. www.st.com STB30N65DM6AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Gate-source voltage ±25 V ID Drain current (continuous) at TC = 25 °C 28 A ID Drain current (continuous) at TC = 100 °C 18 A Drain current (pulsed) 112 A Total power dissipation at TC = 25 °C 223 W dv/dt(2) Peak diode recovery voltage slope 100 V/ns di/dt(2) Peak diode recovery current slope 1000 A/μs dv/dt(3) MOSFET dv/dt ruggedness 100 V/ns VGS IDM (1) PTOT TJ Parameter Operating junction temperature range Tstg Storage temperature range -55 to 150 °C °C 1. Pulse width limited by safe operating area. 2. ISD ≤ 28 A, VDS (peak) < V(BR)DSS, VDD = 400 V. 3. VDS ≤ 520 V. Table 2. Thermal data Symbol RthJC (1) RthJB Parameter Value Unit Thermal resistance, junction-to-case 0.56 °C/W Thermal resistance, junction-to-board 30 °C/W 1. When mounted on FR-4 board of 1 inch², 2 oz Cu. Table 3. Avalanche characteristics DS13770 - Rev 1 Symbol Parameter Value Unit IAR Avalanche current, repetitive or non-repetitive (pulse width limited by TJ max) 4 A EAS Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 100 V) 600 mJ page 2/15 STB30N65DM6AG Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified. Table 4. On/off-state Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. 650 Zero gate voltage drain current IGSS Gate-body leakage current VDS = 0 V, VGS = ±25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 10 A VGS = 0 V, VDS = 650 V, TC = 125 Unit V VGS = 0 V, VDS = 650 V IDSS Max. 5 µA 200 µA ±5 µA 4.00 4.75 V 102 115 mΩ Min. Typ. Max. Unit - 2000 - pF - 130 - pF - 1.5 - pF °C(1) 3.25 1. Defined by design, not subject to production test. Table 5. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 520 V, VGS = 0 V - 339 - pF RG Intrinsic gate resistance f = 1 MHz, open drain - 1.6 - Ω Qg Total gate charge - 46 - nC Qgs Gate-source charge - 13.5 - nC Qgd Gate-drain charge - 20 - nC VDS = 100 V, f = 1 MHz, VGS = 0 V VDD = 520 V, ID = 28 A, VGS = 0 to 10 V (see Figure 14. Test circuit for gate charge behavior) 1. Coss eq. is defined as the constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS. Table 6. Switching times Symbol td(on) tr td(off) tf DS13770 - Rev 1 Parameter Test conditions Min. Typ. Max. Unit Turn-on delay time VDD = 325 V, ID = 14 A, - 17 - ns Rise time RG = 4.7 Ω, VGS = 10 V - 3.3 - ns Turn-off delay time (see Figure 13. Test circuit for resistive load switching times and Figure 18. Switching time waveform) - 46 - ns - 8 - ns Fall time page 3/15 STB30N65DM6AG Electrical characteristics Table 7. Source-drain diode Symbol ISD ISDM (1) VSD(2) Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 28 A Source-drain current (pulsed) - 112 A 1.6 V Forward on voltage ISD = 28 A, VGS = 0 V - trr Reverse recovery time ISD = 28 A, di/dt = 100 A/µs, - 126 ns Qrr Reverse recovery charge VDD = 60 V - 0.63 µC IRRM Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 10 A trr Reverse recovery time ISD = 28 A, di/dt = 100 A/µs, - 220 ns Qrr Reverse recovery charge VDD = 60 V, TJ = 150 °C - 2.1 µC Reverse recovery current (see Figure 15. Test circuit for inductive load switching and diode recovery times) - 19 A IRRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%. DS13770 - Rev 1 page 4/15 STB30N65DM6AG Electrical characteristics 2.1 (curves) Electrical characteristics (curves) Figure 2. Maximum transient thermal impedance Figure 1. Safe operating area ID (A) 10 2 10 1 10 0 GADG290520201145SOA duty=0.5 ea ar s ) i th (on in R DS n y o i at d b er ite Op lim is R tp=1 µs V(BR)DSS DS(on) 10 -1 10 10 -1 0 tp=100 µs 2 10 -2 RthJC = 0.56 °C/W duty = ton / T Single pulse ton tp=1 ms VDS (V) Figure 3. Typical output characteristics ID (A) 3 0.05 max. TC = 25 °C TJ ≤ 150 °C single pulse 10 1 10 2 -2 4 10 -1 tp=10 µs tp=10 ms 10 GADG290520201045ZTH ZthJC (°C/W) IDM GADG220120200821OCH VGS=9, 10 V 100 10 T -3 10 -6 10 -5 80 60 10 -3 10 -2 10 -1 tp (s) Figure 4. Typical transfer characteristics ID (A) GADG220120200822TCH 100 VGS=8 V 10 -4 VDS = 20 V 80 60 VGS=7 V 40 20 VGS=6 V 0 0 4 8 12 16 VDS (V) Figure 5. Typical drain-source on-resistance RDS(on) (mΩ) GADG070620210930RID 105 40 20 0 4 5 7 8 9 VGS (V) Figure 6. Typical gate charge characteristics GADG220120200832QVG VDS (V) VDD = 520 V ID = 28 A 600 VGS = 10 V 6 VGS (V) 12 Qg 104 500 103 400 102 300 6 101 200 4 100 100 2 99 0 DS13770 - Rev 1 5 10 15 20 25 ID (A) 0 0 Qgs 10 10 8 Qgd 20 30 40 50 0 Qg (nC) page 5/15 STB30N65DM6AG Electrical characteristics Figure 7. Typical capacitance characteristics C (pF) Figure 8. Normalized gate threshold vs temperature VGS(th) (norm.) GADG220120200825CVR GADG220120200826VTH 1.1 10 4 CISS 10 3 (curves) ID =250µA 1.0 0.9 10 2 10 1 10 0 10 -1 COSS 0.8 CRSS 0.7 f=1MHz 10 0 10 1 10 2 VDS (V) Figure 9. Normalized on-resistance vs temperature RDS(on) (norm.) GADG220120200827RON 2.5 0.6 -75 1.5 12 1.0 8 0.5 4 75 125 TJ (°C) Figure 11. Normalized breakdown voltage vs temperature V(BR)DSS (norm.) 1.10 TJ (°C) 125 GADG220120200830EOS EOSS (uJ) 16 25 75 20 VGS = 10 V -25 25 Figure 10. Typical output capacitance stored energy 2.0 0.0 -75 -25 GADG220120200827BDV 0 0 100 200 300 400 500 600 VDS (V) Figure 12. Typical reverse diode forward characteristics VSD (V) GADG220120200829SDF 1.2 TJ =-50°C ID = 1 mA 1.1 1.05 TJ =25°C 1.0 1.00 0.9 0.95 0.90 0.85 -75 DS13770 - Rev 1 TJ =150°C 0.8 0.7 -25 25 75 125 TJ (°C) 0.6 0 4 8 12 16 20 24 28 ISD (A) page 6/15 STB30N65DM6AG Test circuits 3 Test circuits Figure 13. Test circuit for resistive load switching times Figure 14. Test circuit for gate charge behavior VDD RL RL 2200 + μF 3.3 μF VDD RG VGS IG= CONST VGS VD + pulse width D.U.T. 2.7 kΩ 2200 μF pulse width D.U.T. 100 Ω VG 47 kΩ 1 kΩ AM01469v10 AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times Figure 16. Unclamped inductive load test circuit D G A D.U.T. S 25 Ω A A B B B G RG VD 3.3 µF D + L 100 µH fast diode 1000 + µF 2200 + µF VDD 3.3 µF VDD ID D.U.T. S D.U.T. Vi pulse width _ AM01471v1 AM01470v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform V(BR)DSS ton td(on) VD toff td(off) tr tf 90% 90% IDM VDD 10% 0 ID VDD VGS 0 VDS 10% 90% 10% AM01473v1 AM01472v1 DS13770 - Rev 1 page 7/15 STB30N65DM6AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 D²PAK (TO-263) type A2 package information Figure 19. D²PAK (TO-263) type A2 package outline 0079457_A2_26 DS13770 - Rev 1 page 8/15 STB30N65DM6AG D²PAK (TO-263) type A2 package information Table 8. D²PAK (TO-263) type A2 package mechanical data Dim. mm Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.70 8.90 9.10 E2 7.30 7.50 7.70 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 DS13770 - Rev 1 Typ. 0.40 0° 8° page 9/15 STB30N65DM6AG D²PAK (TO-263) type A2 package information Figure 20. D²PAK (TO-263) recommended footprint (dimensions are in mm) 0079457_Rev26_footprint DS13770 - Rev 1 page 10/15 STB30N65DM6AG D²PAK packing information 4.2 D²PAK packing information Figure 21. D²PAK tape outline DS13770 - Rev 1 page 11/15 STB30N65DM6AG D²PAK packing information Figure 22. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 9. D²PAK tape and reel mechanical data Tape Dim. DS13770 - Rev 1 Reel mm mm Dim. Min. Max. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 330 13.2 26.4 30.4 page 12/15 STB30N65DM6AG Revision history Table 10. Document revision history DS13770 - Rev 1 Date Revision 14-Jun-2021 1 Changes First release. page 13/15 STB30N65DM6AG Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .7 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .8 4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4.2 D²PAK packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13770 - Rev 1 page 14/15 STB30N65DM6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS13770 - Rev 1 page 15/15