STB45N65M5

STB45N65M5, STF45N65M5, STP45N65M5 N-channel 650 V, 0.067 Ω typ., 35 A MDmesh™ V Power MOSFET in D2PAK, TO-220FP and TO-220 packages Datasheet − production data Features TAB Order codes 2 3 1 1 ID STB45N65M5 3 D2PAK VDSS @ TJmax RDS(on) max 2 STF45N65M5 TO-220FP 0.078 Ω 710 V 35 A STP45N65M5 TAB • Worldwide best RDS(on) * area • Higher VDSS rating and high dv/dt capability 3 1 • Excellent switching performance 2 • 100% avalanche tested TO-220 Figure 1. Internal schematic diagram Applications • Switching applications $4!" Description ' 3 !-V These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. Device summary Order codes Marking Package Packaging D2PAK Tape and reel STB45N65M5 STF45N65M5 45N65M5 TO-220FP Tube STP45N65M5 March 2013 This is information on a product in full production. TO-220 DocID022854 Rev 4 1/20 www.st.com 20 Contents STB45N65M5, STF45N65M5, STP45N65M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19 2/20 .............................................. 9 DocID022854 Rev 4 STB45N65M5, STF45N65M5, STP45N65M5 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit D2PAK TO-220FP TO-220 Gate-source voltage VGS ID Drain current (continuous) at TC = 25 °C ID IDM ± 25 35 Drain current (continuous) at TC = 100 °C (1) PTOT V 22 Drain current (pulsed) 140 Total dissipation at TC = 25 °C 210 35 (1) A 22 (1) A 140 (1) 40 A W dv/dt (2) Peak diode recovery voltage slope 15 V/ns dv/dt (3) MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 °C) Tstg Storage temperature Tj 2500 Max. operating junction temperature V - 55 to 150 °C 150 °C 1. Limited by maximum junction temperature. 2. ISD ≤ 35 A, di/dt ≤ 400 A/µs, VDS(Peak) < V(BR)DSS, VDD = 400 V 3. VDS ≤ 480 V Table 3. Thermal data Value Symbol Parameter Unit D2PAK TO-220FP TO-220 3.13 0.60 Rthj-case Thermal resistance junction-case max 0.60 Rthj-pcb(1) Thermal resistance junction-pcb max 30 Rthj-amb Thermal resistance junction-ambient max °C/W °C/W 62.5 °C/W 1. When mounted on 1 inch² FR-4, 2 Oz copper board. Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) 9 A EAS Single pulse avalanche energy (starting tj=25°C, Id= IAR; Vdd=50) 810 mJ DocID022854 Rev 4 3/20 Electrical characteristics 2 STB45N65M5, STF45N65M5, STP45N65M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 650 V drain current (VGS = 0) VDS = 650 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Min. Typ. 650 Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Unit V 1 100 µA µA ± 100 nA 4 5 V 0.067 0.078 Ω Min. Typ. Max. Unit - 3470 82 7 - pF pF pF - 280 - pF - 79 - pF - 2 - Ω - 82 18.5 35 - nC nC nC VGS = ± 25 V VGS(th) Max. 3 VGS = 10 V, ID = 17.5 A Table 6. Dynamic Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Parameter Input capacitance Output capacitance Reverse transfer capacitance Test conditions VDS = 100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related Equivalent capacitance energy related VDS = 0 to 520 V, VGS = 0 RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 520 V, ID = 17.5 A, VGS = 10 V (see Figure 18) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/20 DocID022854 Rev 4 STB45N65M5, STF45N65M5, STP45N65M5 Electrical characteristics Table 7. Switching times Symbol td (v) tr (v) tf (i) tc(off) Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 23 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Min. Typ. - 79.5 11 9.3 16 Min. Typ. Max Unit - ns ns ns ns Table 8. Source drain diode Symbol Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage trr Qrr IRRM trr Qrr IRRM Test conditions Max. Unit - 35 140 A A ISD = 35 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V (see Figure 19) - 392 7.4 38 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 35 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 19) - 468 9.7 42 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID022854 Rev 4 5/20 Electrical characteristics 2.1 STB45N65M5, STF45N65M5, STP45N65M5 Electrical characteristics (curves) Figure 2. Safe operating area for D²PAK and TO220 Figure 3. Thermal impedance for D²PAK and TO-220 AM13077v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 is ea ) ar S(on is D th R x in n ma o y ti ra d b e e p O imit L 10 10µs 100µs 1ms 10ms 1 0.1 0.1 10 1 100 VDS(V) Figure 4. Safe operating area TO220FP Figure 5. Thermal impedance for TO-220FP AM13078v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 is ea ar (on) s S i th RD in ax ion y m t a er d b Op mite Li 10 10µs 100µs 1ms 1 10ms 0.1 0.01 0.1 1 10 100 VDS(V) Figure 6. Output characteristics Figure 7. Transfer characteristics AM13080v1 ID (A) 90 80 70 70 60 60 50 50 40 40 30 30 20 6V 10 0 0 VDS=25V 90 80 7V 6/20 AM13081v1 ID (A) VGS=10V 20 10 5 10 15 20 VDS(V) DocID022854 Rev 4 0 3 4 5 6 7 8 9 VGS(V) STB45N65M5, STF45N65M5, STP45N65M5 Electrical characteristics Figure 8. Gate charge vs gate-source voltage AM13082v1 VDS VGS (V) VDS VDD=520V ID=17.5A 12 10 Figure 9. Static drain-source on-resistance (V) RDS(on) (Ω) 500 0.071 400 0.069 300 0.067 200 0.065 100 0.063 AM13083v1 VGS=10V 8 6 4 2 0 0 40 20 60 80 100 0 Qg(nC) Figure 10. Capacitance variations 15 10 5 20 25 ID(A) Figure 11. Output capacitance stored energy AM13084v1 C (pF) 0.061 0 AM13085v1 Eoss (µJ) 16 10000 14 Ciss 1000 12 10 8 100 Coss 4 10 1 0.1 6 Crss 1 100 10 0 0 VDS(V) Figure 12. Normalized gate threshold voltage vs. temperature AM05459v2 VGS(th) (norm) 1.10 2 ID=250µA 100 200 300 400 500 600 VDS(V) Figure 13. Normalized on resistance vs. temperature AM05460v2 RDS(on) (norm) 2.1 VGS=10V ID=17.5V 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 DocID022854 Rev 4 0 25 50 75 100 TJ(°C) 7/20 Electrical characteristics STB45N65M5, STF45N65M5, STP45N65M5 Figure 14. Drain-source diode forward characteristics AM05461v1 VSD (V) Figure 15. Normalized VDS vs. temperature AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs. gate resistance (1) E (μJ) 600 AM13086v1 Eon ID=23A VDD=400V VGS=10V 500 400 Eoff 300 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/20 DocID022854 Rev 4 0 25 50 75 100 TJ(°C) STB45N65M5, STF45N65M5, STP45N65M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF VGS IG=CONST VDD 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 19. Test circuit for inductive load switching and diode recovery times A A D.U.T. FAST DIODE B B AM01469v1 Figure 20. Unclamped inductive load test circuit L A D G VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 21. Unclamped inductive waveform V(BR)DSS Figure 22. Switching time waveform Concept waveform for Inductive Load Turn-off Id VD 90%Vds 90%Id Tdelay-off -off IDM Vgs 90%Vgs on ID Vgs(I(t)) )) VDD VDD 10%Id 10%Vds Vds Trise AM01472v1 DocID022854 Rev 4 Tfall Tcross --over AM05540v2 9/20 Package mechanical data 4 STB45N65M5, STF45N65M5, STP45N65M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 10/20 DocID022854 Rev 4 STB45N65M5, STF45N65M5, STP45N65M5 Package mechanical data Table 9. D²PAK (TO-263) mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 E 10 E1 8.50 10.40 e 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° 8° DocID022854 Rev 4 11/20 Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 23. D²PAK (TO-263) drawing 0079457_T Figure 24. D²PAK footprint(a) 16.90 12.20 5.08 1.60 3.50 9.75 a. All dimensions are in millimeters 12/20 DocID022854 Rev 4 Footprint STB45N65M5, STF45N65M5, STP45N65M5 Package mechanical data Table 10. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID022854 Rev 4 13/20 Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 25. TO-220FP drawing 7012510_Rev_K_B 14/20 DocID022854 Rev 4 STB45N65M5, STF45N65M5, STP45N65M5 Package mechanical data Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 DocID022854 Rev 4 15/20 Package mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 26. TO-220 type A drawing 0015988_typeA_Rev_S 16/20 DocID022854 Rev 4 STB45N65M5, STF45N65M5, STP45N65M5 5 Packaging mechanical data Packaging mechanical data Table 12. D²PAK (TO-263) tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base qty 1000 P2 1.9 2.1 Bulk qty 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID022854 Rev 4 Min. Max. 330 13.2 26.4 30.4 17/20 Packaging mechanical data STB45N65M5, STF45N65M5, STP45N65M5 Figure 27. Tape for D²PAK (TO-263) 10 pitches cumulative tolerance on tape +/- 0.2 mm T P0 Top cover tape P2 D E F W K0 B0 A0 P1 D1 User direction of feed R Bending radius User direction of feed AM08852v2 Figure 28. Reel for D²PAK (TO-263) T REEL DIMENSIONS 40mm min. Access hole At sl ot location B D C N A Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 18/20 DocID022854 Rev 4 STB45N65M5, STF45N65M5, STP45N65M5 6 Revision history Revision history Table 13. Document revision history Date Revision Changes 22-Feb-2012 1 First release. 28-Aug-2012 2 Document status promoted from preliminary data to production data. Inserted Section 2.1: Electrical characteristics (curves). 05-Dec-2012 3 The part number STW45N65M5 has been moved to a separate datasheet. 05-Mar-2013 4 – Added dv/dt value on Table 2: Absolute maximum ratings – Minor text changes DocID022854 Rev 4 19/20 STB45N65M5, STF45N65M5, STP45N65M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. 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