STGB10M65DF2

STGB10M65DF2 Trench gate field-stop IGBT, M series 650 V, 10 A low-loss in D²PAK package Datasheet - production data Features         TAB 2 3 1 6 µs of short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 10 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C D²PAK Applications Figure 1: Internal schematic diagram     Motor control UPS PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB10M65DF2 G10M65DF2 D²PAK Tape and reel April 2017 DocID027429 Rev 6 This is information on a product in full production. 1/19 www.st.com Contents STGB10M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 5 2/19 4.1 D²PAK package information ............................................................ 13 4.2 D2PAK packing information ............................................................. 16 Revision history ............................................................................ 18 DocID027429 Rev 6 STGB10M65DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V Continuous collector current at TC = 25 °C 20 Continuous collector current at TC = 100 °C 10 ICP(1) Pulsed collector current 40 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 20 Continuous forward current at TC = 100 °C 10 IFP(1) Pulsed forward current 40 A PTOT Total dissipation at TC = 25 °C 115 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 VCES IC IF TJ Parameter A A °C Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value RthJC Thermal resistance junction-case IGBT 1.3 RthJC Thermal resistance junction-case diode 2.08 RthJA Thermal resistance junction-ambient 62.5 DocID027429 Rev 6 Unit °C/W 3/19 Electrical characteristics 2 STGB10M65DF2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) Parameter Collector-emitter breakdown voltage Collector-emitter saturation voltage Test conditions Min. VGE = 0 V, IC = 250 μA 650 Forward on-voltage 1.55 VGE = 15 V, IC = 10 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 10 A, TJ = 175 °C 2.1 1.5 IF = 10 A, TJ = 125 °C 1.3 IF = 10 A, TJ = 175 °C 1.2 VGE(th) Gate threshold voltage VCE = VGE, IC = 250 µA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Max. Unit V VGE = 15 V, IC = 10 A IF = 10 A VF Typ. 6 2.0 V 2.25 V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ± 20 V ±250 µA Unit Table 5: Dynamic characteristics Symbol Cies 4/19 Parameter Test conditions Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Min. Typ. Max. - 840 - - 63 - VCC = 520 V, IC = 10 A, VGE = 0 to 15 V (see Figure 30: " Gate charge test circuit") DocID027429 Rev 6 16 pF - - 28 - - 6 - - 12 - nC STGB10M65DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 19 - ns Current rise time 7.4 - ns 1086 - A/µs 91 - ns 92 - ns 0.12 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 400 V, IC = 10 A, VGE = 15 V, RG = 22 Ω (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.27 - mJ Total switching energy 0.39 - mJ 18 - ns 9 - ns 890 - A/µs Eoff Ets td(on) tr Turn-on delay time Current rise time (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 10 A, VGE = 15 V, RG = 22 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 90 - ns 170 - ns 0.26 - mJ Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.4 - mJ Total switching energy 0.66 - mJ Eoff Ets tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol trr Parameter Test conditions Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 10 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 29: " Test circuit for inductive load switching") IF = 10 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/μs, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") DocID027429 Rev 6 Min. Typ. Max. Unit - 96 - ns - 373 - nC - 13 - A - 661 - A/µs - 52 - µJ - 201 - ns - 1352 - nC - 19 - A - 405 - A/µs - 150 - µJ 5/19 Electrical characteristics 2.1 STGB10M65DF2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current 6/19 DocID027429 Rev 6 STGB10M65DF2 Electrical characteristics Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature DocID027429 Rev 6 7/19 Electrical characteristics STGB10M65DF2 Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage 8/19 DocID027429 Rev 6 STGB10M65DF2 Electrical characteristics Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope DocID027429 Rev 6 9/19 Electrical characteristics STGB10M65DF2 Figure 26: Reverse recovery energy vs. diode current slope Figure 27: Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 10/19 10 -4 10 -3 10 -2 DocID027429 Rev 6 10 -1 tp (s) STGB10M65DF2 Electrical characteristics Figure 28: Thermal impedance for diode DocID027429 Rev 6 11/19 Test circuits 3 STGB10M65DF2 Test circuits Figure 29: Test circuit for inductive load switching C A Figure 30: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG VCC 1000 µF D.U.T E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt Qrr trr IF ts tf t IRRM 10% IRRM VRRM dv/dt AM01507v1 12/19 DocID027429 Rev 6 STGB10M65DF2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK package information Figure 33: D²PAK (TO-263) type A package outline DocID027429 Rev 6 13/19 Package information STGB10M65DF2 Table 8: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 14/19 Typ. 0.40 0° DocID027429 Rev 6 8° STGB10M65DF2 Package information Figure 34: D²PAK (TO-263) type A recommended footprint (dimensions are in mm) DocID027429 Rev 6 15/19 Package information 4.2 STGB10M65DF2 2 D PAK packing information Figure 35: D2PAK type A tape outline 16/19 DocID027429 Rev 6 STGB10M65DF2 Package information Figure 36: D2PAK type A reel outline Table 9: D²PAK type A tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027429 Rev 6 Min. Max. 330 13.2 26.4 30.4 17/19 Revision history 5 STGB10M65DF2 Revision history Table 10: Document revision history Date Revision 10-Feb-2015 1 First release. 23-Apr-2015 2 Minor text edits throughout document In Section 2 Electrical characteristics: - updated Table 4: Static characteristics - updated Table 5: Dynamic characteristics - updated Table 6: IGBT switching characteristics (inductive load) - updated Table 7: Diode switching characteristics (inductive load) Added Section 2.1 Electrical characteristics (curves) 11-Jun-2015 3 Document status promoted from preliminary to production data. 31-Jul-2015 4 Updated table titled: "Diode switching characteristics (inductive load)". 20-Oct-2015 5 Updated Table 5: "Dynamic characteristics" and Table 6: "IGBT switching characteristics (inductive load)". Updated Figure 8: "Collector current vs. switching frequency". 6 Modified title, features and applications on cover page Modified Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)" Minor text changes. 04-Apr-2017 18/19 Changes DocID027429 Rev 6 STGB10M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID027429 Rev 6 19/19