STGB4M65DF2

STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data Features       TAB 2 3 1 6 µs of short-circuit withstand time VCE(sat) = 1.6 V (typ.) @ IC = 4 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications D²PAK    Figure 1: Internal schematic diagram Motor control UPS PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGB4M65DF2 G4M65DF2 D²PAK Tape and reel November 2016 DocID028667 Rev 4 This is information on a product in full production. 1/18 www.st.com Contents STGB4M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 5 2/18 4.1 D²PAK (TO-263) type A package information ................................. 12 4.2 Packing information ......................................................................... 15 Revision history ............................................................................ 17 DocID028667 Rev 4 STGB4M65DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES IC Parameter Collector-emitter voltage (VGE = 0 V) Value Unit 650 V Continuous collector current at TC = 25 °C 8 A Continuous collector current at TC = 100 °C 4 A ICP(1) Pulsed collector current 16 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 8 A IF Continuous forward current at TC = 100 °C 4 A IFP(1) Pulsed forward current 16 A PTOT Total dissipation at TC = 25 °C 68 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature range - 55 to 175 °C Value Unit TJ Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 2.2 °C/W RthJC Thermal resistance junction-case diode 5 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W DocID028667 Rev 4 3/18 Electrical characteristics 2 STGB4M65DF2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) VF Collector-emitter saturation voltage Forward on-voltage Test conditions Min. VGE = 0 V, IC = 250 µA 650 Typ. 1.6 VGE = 15 V, IC = 4 A, TJ = 125 °C 1.9 VGE = 15 V, IC = 4 A,TJ = 175 °C 2.1 IF = 4 A 1.9 IF = 4 A, TJ = 125 °C 1.7 IF = 4 A, TJ = 175 °C 1.6 Gate threshold voltage VCE = VGE, IC = 250 µA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 4 A VGE(th) Max. 6 2.1 V V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ± 20 V ±250 µA Unit Table 5: Dynamic characteristics Symbol Cies 4/18 Parameter Test conditions Input capacitance VCE= 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 520 V, IC = 4 A, VGE = 15 V (see Figure 30: " Gate charge test circuit") DocID028667 Rev 4 Min. Typ. Max. - 369 - - 24.8 - - 8 - - 15.2 - - 3 - - 7 - pF nC STGB4M65DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 12 - ns Current rise time 6.9 - ns 480 - A/µs Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω (see Figure 29: " Test circuit for inductive load switching" ) 86 - ns 120 - ns 0.040 - mJ Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.136 - mJ Total switching energy 0.176 - mJ Turn-on delay time 11.6 - ns 8 - ns 410 - A/µs Eoff Ets td(on) tr Current rise time (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 4 A, VGE = 15 V, RG = 47 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) 85 - ns 211 - ns 0.067 - mJ Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.210 - mJ Total switching energy 0.277 - mJ Eoff Ets tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - µs Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol trr Parameter Test conditions Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 4 A, VR = 400 V, VGE = 15 V, di/dt = 800 A/µs (see Figure 29: " Test circuit for inductive load switching") IF = 4 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 800 A/µs (see Figure 29: " Test circuit for inductive load switching") DocID028667 Rev 4 Min. Typ. Max. Unit - 133 - ns - 140 - nC - 5 - A - 520 - A/µs - 15 - µJ - 236 - ns - 370 - nC - 6.6 - A - 378 - A/µs - 32 - µJ 5/18 Electrical characteristics 2.1 6/18 STGB4M65DF2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current DocID028667 Rev 4 STGB4M65DF2 Electrical characteristics Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature DocID028667 Rev 4 7/18 Electrical characteristics 8/18 STGB4M65DF2 Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage DocID028667 Rev 4 STGB4M65DF2 Electrical characteristics Figure 20: Short-circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope Qrr IGBT170320161123RRQ (nC) VCC= 400 V, VGE= 15 V, IF= 4 A, Tj= 175 °C 370 365 360 355 350 0 DocID028667 Rev 4 150 300 450 600 750 di/dt (A/µs) 9/18 Electrical characteristics STGB4M65DF2 Figure 26: Reverse recovery energy vs. diode current slope Figure 27: Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 10 0.05 -1 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 10 -4 10 -3 10 -2 10 -1 tp (s) Figure 28: Thermal impedance for diode CG20930 K δ = 0.5 δ = 0.2 δ = 0.1 -1 10 Z Zthth == kk R Rthj-C thj-C δδ == ttp // Ƭ Ƭ p δ = 0.05 δ = 0.02 δ = 0.01 tp SINGLE PULSE ƬƬ -2 10 10/18 10-5 10-4 10-3 10-2 DocID028667 Rev 4 10-1 tp(s) STGB4M65DF2 3 Test circuits Test circuits Figure 29: Test circuit for inductive load switching C A Figure 30: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG VCC 1000 µF D.U.T E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform di/dt Qrr trr IF ts tf t IRRM 10% IRRM VRRM dv/dt AM01507v1 DocID028667 Rev 4 11/18 Package information 4 STGB4M65DF2 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 D²PAK (TO-263) type A package information Figure 33: D²PAK (TO-263) type A package outline 0079457_A_rev22 12/18 DocID028667 Rev 4 STGB4M65DF2 Package information Table 8: D²PAK (TO-263) type A package mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10 E1 8.50 8.70 8.90 E2 6.85 7.05 7.25 e 10.40 2.54 e1 4.88 5.28 H 15 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.4 0° DocID028667 Rev 4 8° 13/18 Package information STGB4M65DF2 Figure 34: D²PAK (TO-263) recommended footprint (dimensions are in mm) 14/18 DocID028667 Rev 4 STGB4M65DF2 4.2 Package information Packing information Figure 35: Tape outline DocID028667 Rev 4 15/18 Package information STGB4M65DF2 Figure 36: Reel outline Table 9: D²PAK tape and reel mechanical data Tape Reel mm mm Dim. 16/18 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID028667 Rev 4 Min. Max. 330 13.2 26.4 30.4 STGB4M65DF2 5 Revision history Revision history Table 10: Document revision history Date 23-Nov-2015 Revision Changes 1 First release. 17-Mar-2016 2 Modified: features in cover page Modified: Table 2: "Absolute maximum ratings", Table 4: "Static characteristics", Table 5: "Dynamic characteristics", Table 6: "IGBT switching characteristics (inductive load)" and Table 7: "Diode switching characteristics (inductive load)" Added: Section 2: "Electrical characteristics" Minor text changes 21-Mar-2016 3 Modified: schematic in cover page Datasheet promoted from preliminary data to production data Minor text changes 21-Nov-2016 4 Updated Table 2: "Absolute maximum ratings" Updated Figure 25: "Reverse recovery charge vs. diode current slope" Updated Figure 32: " Diode reverse recovery waveform" DocID028667 Rev 4 17/18 STGB4M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved 18/18 DocID028667 Rev 4