STGB20M65DF2

STGB20M65DF2 Datasheet Trench gate field-stop, 650 V, 20 A, M series low-loss IGBT Features TAB 2 1 3 D²PAK • • High short-circuit withstand time VCE(sat) = 1.55 V (typ.) @ IC = 20 A • • • • Tight parameters distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications C(2, TAB) • • • • G(1) Motor control UPS PFC General-purpose inverters Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGB20M65DF2 Product summary Order code STGB20M65DF2 Marking G20M65DF2 Package D²PAK Packing Tape and reel DS11370 - Rev 3 - October 2018 For further information contact your local STMicroelectronics sales office. www.st.com STGB20M65DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0) 650 V Continuous collector current at TC = 25 °C 40 A Continuous collector current at TC = 100 °C 20 A ICP(1) Pulsed collector current 80 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 40 A Continuous forward current at TC = 100 °C 20 A IFP Pulsed forward current 80 A PTOT Total dissipation at TC = 25 °C 166 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC IF (1) TJ Parameter 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS11370 - Rev 3 Parameter RthJC Thermal resistance junction-case IGBT 0.9 °C/W RthJC Thermal resistance junction-case diode 2.08 °C/W RthJA Thermal resistance junction-ambient 62.5 °C/W page 2/18 STGB20M65DF2 Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 250 μA Min. Typ. 650 1.55 VGE = 15 V, IC = 20 A, TJ = 125 °C 1.95 VGE = 15 V, IC = 20 A, TJ = 175 °C 2.1 IF = 20 A 1.85 IF = 20 A, TJ = 125 °C 1.65 IF = 20 A, TJ = 175 °C 1.55 Gate threshold voltage VCE = VGE, IC = 500 µA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 20 A VGE(th) Max. 6 2.0 V V 7 V VGE = 0 V, VCE = 650 V 25 µA VCE = 0 V, VGE = ± 20 V 250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 1688 - - 95 - - 35 - Qg Total gate charge VCC = 520 V, IC = 20 A, - 63 - Qge Gate-emitter charge VGE = 0 to 15 V - 15 - Gate-collector charge (see Figure 29. Gate charge test circuit) - 26 - Qgc DS11370 - Rev 3 Parameter pF nC page 3/18 STGB20M65DF2 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr Parameter Test conditions Min. Turn-on delay time Current rise time (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time VCE = 400 V, IC = 20 A, VGE = 15 V, RG = 12 Ω (see Figure 28. Test circuit for inductive load switching) Typ. Max. Unit 26 - ns 10.8 - ns 1409 - A/µs 108 - ns 65 - ns 0.14 - mJ Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.56 - mJ Total switching energy 0.7 - mJ Turn-on delay time 28.4 - ns Current rise time 11.2 - ns Eoff Ets td(on) tr (di/dt)on td(off) Turn-on current slope VCE = 400 V, IC = 20 A, 1393 - A/µs Turn-off delay time VGE = 15 V, RG = 12 Ω, 107 - ns 145 - ns 0.3 - mJ Current fall time TJ = 175 °C Eon (1) Turn-on switching energy (see Figure 28. Test circuit for inductive load switching) Eoff(2) Turn-off switching energy 0.85 - mJ Total switching energy 1.15 - mJ tf Ets tsc Short-circuit withstand time VCC = 400 V, VGE = 13 V, TJstart = 150 °C 10 - VCC = 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol Test conditions Min. Typ. Max. Unit - 166 ns trr Reverse recovery time Qrr Reverse recovery charge IF = 20 A, VR = 400 V, - 690 nC Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 13.2 A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 28. Test circuit for inductive load switching) - 769 A/µs Err Reverse recovery energy - 81 µJ trr Reverse recovery time - 281 ns - 2010 nC - 19.6 A - 370 A/µs - 215 µJ Qrr DS11370 - Rev 3 Parameter Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 20 A, VR = 400 V, VGE = 15 V, TJ = 175 °C, di/dt = 1000 A/µs (see Figure 28. Test circuit for inductive load switching) page 4/18 STGB20M65DF2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature IGBT06111520M65BPDT P TOT (W) VGE ≥ 15 V, TJ ≤ 175 °C Figure 2. Collector current vs case temperature IGBT06111520M65BCCT IC (A) VGE ≥ 15 V, TJ ≤ 175 °C 160 40 120 30 80 20 40 10 0 -50 0 50 100 150 T C (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) 60 IGBT29101520M65FOC25 0 50 100 150 T C (°C) Figure 4. Output characteristics (TJ = 175 °C) IC (A) IGBT29101520M65FOC175 V GE =15 V 13 V V GE = 15 V 0 -50 60 11 V 40 13 V 40 11 V 9V 20 0 0 20 7V 1 2 3 4 5 V CE (V) Figure 5. VCE(sat) vs junction temperature V CE(SAT) (V) 3.0 0 0 9V 7V 1 2 3 4 5 V CE (V) Figure 6. VCE(sat) vs collector current IGBT29101520M65FVCET V GE = 15 V IGBT29101520M65FVCEC V CE(SAT) (V) I C =40 A 3.0 2.6 V GE = 15 V 2.6 I C =20 A 2.2 2.2 T j = 25 °C T j = 175 °C 1.8 1.8 T j = - 40 °C 1.4 I C =10 A 1.4 1.0 1 -50 DS11370 - Rev 3 0 50 100 150 T J (°C) 0.6 0 10 20 30 40 I C (A) page 5/18 STGB20M65DF2 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) IGBT06111520M65BCCS Rectangular current shape (duty cycle =0.5, VCC = 400 V, RG = 12 Ω VGE = 0/15 V, Tj = 175 °C Figure 8. Forward bias safe operating area IC (A) IGBT06111520M65BFSOA tp = 1 µs 40 TC = 80 °C 30 tp = 10 µs 101 20 TC = 100 °C tp = 100 µs 10 0 10 0 10 10 1 f (kHz) 2 IGBT29101520M65FTCH VCE = 6 V 60 single pulse, T C = 25°C, T J ≤ 175 °C, V GE = 15 V tp = 1 ms VCE (V) 102 VF (V) 2.2 50 101 Figure 10. Diode VF vs forward current Figure 9. Transfer characteristics IC (A) 100 100 TJ = 25 °C IGBT30101520M65FDVF T j = -40 °C T j = 25 °C 1.8 40 1.4 T j = 175 °C 30 1.0 20 TJ = 175 °C 0.6 10 0 6 7 8 9 10 11 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature V GE(th) (Norm.) IGBT29101520M65FNVGE VCE = VGE, IC = 500 μΑ 1.1 0.2 0 V (BR)CES (Norm.) 0.9 0.96 0.8 0.92 DS11370 - Rev 3 50 100 150 T J (°C) 30 I F (A) IGBT29101520M65FNVBR I C = 250 µA 1.04 1.0 0 20 Figure 12. Normalized V(BR)CES vs junction temperature 1.0 0.7 -50 10 0.88 -50 0 50 100 150 T J(°C) page 6/18 STGB20M65DF2 Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) IGBT29101520M65FCVR C ies Figure 14. Gate charge vs gate-emitter voltage VGE (V) IGBT29101520M65FGCGE VCC = 520 V, IC = 20 A, IG =1mA 16 10 3 C oes 10 2 12 C res 8 10 1 4 f = 1 MHz 10 0 10 -1 10 0 10 1 10 2 V CE (V) Figure 15. Switching energy vs collector current E (mJ) IGBT29101520M65FSLC VCC = 400 V, RG = 12 Ω, VGE = 15 V, TJ = 175 °C 0 0 10 20 30 60 70 Qg (nC) Figure 16. Switching energy vs gate resistance E (mJ) IGBT29101520M65FSLG VCC = 400 V, IC = 20 A, VGE = 15 V, Tj = 175 °C 2.0 E tot 1.6 1.6 E tot 1.2 E off 0.8 E off 0.8 0.4 10 20 30 40 IGBT29101520M65FSLT V CC =400 V, I C = 20 A, R g = 12 Ω, V GE = 15 V 120 RG (Ω) Figure 18. Switching energy vs collector emitter voltage E (mJ) 1.0 E off IGBT29101520M65FSLV I C = 20 A, R g = 12 Ω, V GE = 15 V, T j = 175 °C E tot 0.8 E off 0.6 0.4 DS11370 - Rev 3 80 1.2 E tot 0.6 0 0 40 1.4 1.0 0.2 0 0 I C (A) Figure 17. Switching energy vs temperature 0.8 E on 0.4 E on 0.0 0 E (mJ) 50 2.4 2.0 1.2 40 0.4 E on E on 0.2 50 100 150 T J (°C) 0 150 250 350 450 V CE (V) page 7/18 STGB20M65DF2 Electrical characteristics (curves) Figure 19. Short-circuit time and current vs VGE IGBT29101520M65FSCV I SC t sc (µs) (A) T j ≤ 150 °C V CC ≤ 400 V 20 10 tf 10 2 t d(off) 100 70 I SC 5 t d(on) 10 1 tr 40 0 9 10 11 12 13 14 15 10 V GE (V) Figure 21. Switching times vs gate resistance t (ns) IGBT30101520M65FSTC t (ns) VCC = 400 V, VGE = 15 V, RG = 12 Ω, Tj = 175°C 130 t SC 15 Figure 20. Switching times vs collector current IGBT29101520M65FSTR VCC = 400 V, VGE = 15 V, IC = 20 A, Tj = 175 °C 10 0 0 10 20 30 IC (A) 40 Figure 22. Reverse recovery current vs diode current slope I rrm (A) IGBT29101520M65FRRC VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C t d(off) tf 35 10 2 t d(on) 25 tr 10 1 15 10 0 0 40 80 120 RG (Ω) Figure 23. Reverse recovery time vs diode current slope t rr (ns) IGBT20101520M65FRRT VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C 5 200 800 1400 2000 di/dt (A/µs) Figure 24. Reverse recovery charge vs diode current slope Q rr (µC) IGBT29101520M65FRRQ VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C 350 2.1 300 2.05 250 2 200 150 200 DS11370 - Rev 3 800 1400 2000 di/dt (A/µs) 1.95 200 800 1400 2000 di/dt (A/µs) page 8/18 STGB20M65DF2 Electrical characteristics (curves) Figure 25. Reverse recovery energy vs diode current slope IGBT29101520M65FRRE Err (mJ) VCC = 400 V, VGE = 15 V, IF = 20 A, Tj = 175 °C 0.25 0.20 0.15 0.10 0.05 200 800 1400 2000 di/dt (A/µs) Figure 26. Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 27. Thermal impedance for diode DS11370 - Rev 3 page 9/18 STGB20M65DF2 Test circuits 3 Test circuits Figure 28. Test circuit for inductive load switching C A Figure 29. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 31. Diode reverse recovery waveform Figure 30. Switching waveform 90% 10% VG 90% VCE 10% Tr(Voff) Tcross 25 90% IC Td(on) Ton 10% Td(off) Tr(Ion) Tf Toff AM01506v1 DS11370 - Rev 3 page 10/18 STGB20M65DF2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DS11370 - Rev 3 page 11/18 STGB20M65DF2 D²PAK (TO-263) type A2 package information 4.1 D²PAK (TO-263) type A2 package information Figure 32. D²PAK (TO-263) type A2 package outline 0079457_A2_25 DS11370 - Rev 3 page 12/18 STGB20M65DF2 D²PAK (TO-263) type A2 package information Table 7. D²PAK (TO-263) type A2 package mechanical data Dim. mm Min. Typ. Max. A 4.40 4.60 A1 0.03 0.23 b 0.70 0.93 b2 1.14 1.70 c 0.45 0.60 c2 1.23 1.36 D 8.95 9.35 D1 7.50 7.75 8.00 D2 1.10 1.30 1.50 E 10.00 E1 8.70 8.90 9.10 E2 7.30 7.50 7.70 e 10.40 2.54 e1 4.88 5.28 H 15.00 15.85 J1 2.49 2.69 L 2.29 2.79 L1 1.27 1.40 L2 1.30 1.75 R V2 0.40 0° 8° Figure 33. D²PAK (TO-263) recommended footprint (dimensions are in mm) Footprint DS11370 - Rev 3 page 13/18 STGB20M65DF2 D²PAK packing information 4.2 D²PAK packing information Figure 34. D²PAK tape outline DS11370 - Rev 3 page 14/18 STGB20M65DF2 D²PAK packing information Figure 35. D²PAK reel outline T 40mm min. access hole at slot location B D C N A G measured at hub Tape slot in core for tape start 2.5mm min.width Full radius AM06038v1 Table 8. D²PAK tape and reel mechanical data Tape Dim. DS11370 - Rev 3 Reel mm mm Dim. Min. Max. Min. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T Max. 330 13.2 26.4 30.4 P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 page 15/18 STGB20M65DF2 Revision history Table 9. Document revision history DS11370 - Rev 3 Date Revision 05-Nov-2015 1 14-Apr-2016 2 08-Oct-2018 3 Changes First release. Updated Figure 13: "Normalized V(BR)CES vs. junction temperature". Minor text changes. Updated Table 3. Static characteristics. Minor text changes page 16/18 STGB20M65DF2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 D²PAK (TO-263) type A2 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 Packing information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 DS11370 - Rev 3 page 17/18 STGB20M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2018 STMicroelectronics – All rights reserved DS11370 - Rev 3 page 18/18