STGF15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss
in a TO-220FP package
Datasheet - production data
Features
6 μs of short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 15 A
Tight parameter distribution
Safer paralleling
Positive VCE(sat) temperature coefficient
Low thermal resistance
Soft and very fast recovery antiparallel diode
Maximum junction temperature: TJ = 175 °C
Applications
TO-220FP
Figure 1: Internal schematic diagram
C (2)
Motor control
UPS
PFC
General purpose inverter
Description
This device is an IGBT developed using an
advanced proprietary trench gate field-stop
structure. The device is part of the M series
IGBTs, which represent an optimal balance
between inverter system performance and
efficiency where low-loss and short-circuit
functionality are essential. Furthermore, the
positive VCE(sat) temperature coefficient and tight
parameter distribution result in safer paralleling
operation.
G (1)
Sc12850_no_tab
E (3)
Table 1: Device summary
Order code
Marking
Package
Packing
STGF15M65DF2
G15M65DF2
TO-220FP
Tube
May 2017
DocID028488 Rev 3
This is information on a product in full production.
1/17
www.st.com
Contents
STGF15M65DF2
Contents
1
Electrical ratings ............................................................................. 3
2
Electrical characteristics ................................................................ 4
2.1
Electrical characteristics (curves) ...................................................... 6
3
Test circuits ................................................................................... 12
4
Package information ..................................................................... 13
4.1
5
2/17
TO-220FP package information ...................................................... 14
Revision history ............................................................................ 16
DocID028488 Rev 3
STGF15M65DF2
1
Electrical ratings
Electrical ratings
Table 2: Absolute maximum ratings
Symbol
Parameter
Value
Unit
VCES
Collector-emitter voltage (VGE = 0 V)
650
V
IC(1)
Continuous collector current at TC = 25 °C
30
A
IC(1)
Continuous collector current at TC = 100 °C
15
A
ICP(2)
Pulsed collector current
60
A
VGE
Gate-emitter voltage
±20
V
IF
(1)
Continuous forward current at TC = 25 °C
30
A
IF
(1)
Continuous forward current at TC = 100 °C
15
A
IFP(2)
Pulsed forward current
60
A
VISO
Insulation withstand voltage (RMS) from all three leads to external
heat sink (t = 1 s, TC = 25 °C)
2.5
kV
PTOT
Total dissipation at TC = 25 °C
31
W
TSTG
Storage temperature range
- 55 to 150
°C
Operating junction temperature range
- 55 to 175
°C
TJ
Notes:
(1)Limited
(2)Pulse
by maximum junction temperature.
width limited by maximum junction temperature.
Table 3: Thermal data
Symbol
Parameter
Value
Unit
RthJC
Thermal resistance junction-case IGBT
4.8
°C/W
RthJC
Thermal resistance junction-case diode
6.25
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
DocID028488 Rev 3
3/17
Electrical characteristics
2
STGF15M65DF2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 4: Static characteristics
Symbol
V(BR)CES
VCE(sat)
VF
Parameter
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Forward on-voltage
Test conditions
Min.
VGE = 0 V, IC = 250 μA
650
Typ.
1.55
VGE = 15 V, IC = 15 A,
TJ = 125 °C
1.9
VGE = 15 V, IC = 15 A,
TJ = 175 °C
2.1
IF = 15 A
1.7
IF = 15 A, TJ = 125 °C
1.5
IF = 15 A, TJ = 175 °C
1.4
Gate threshold voltage
VCE = VGE, IC = 500 µA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 15 A
VGE(th)
Max.
6
2.0
V
2.6
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ±20 V
±250
µA
Unit
Table 5: Dynamic characteristics
Symbol
4/17
Parameter
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer
capacitance
Test conditions
VCE = 25 V, f = 1 MHz,
VGE = 0 V
Qg
Total gate charge
Qge
Gate-emitter charge
Qgc
Gate-collector charge
VCC = 520 V, IC = 15 A,
VGE = 0 to 15 V
(see Figure 30: " Gate
charge test circuit")
DocID028488 Rev 3
Min.
Typ.
Max.
-
1250
-
-
80
-
-
25
-
-
45
-
-
11
-
-
15
-
pF
nC
STGF15M65DF2
Electrical characteristics
Table 6: IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
(di/dt)on
td(off)
tf
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Turn-on delay time
-
24
-
ns
Current rise time
-
7.8
-
ns
-
1570
-
A/µs
-
93
-
ns
-
106
-
ns
-
0.09
-
mJ
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω
(see Figure 29: " Test circuit
for inductive load switching" )
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
-
0.45
-
mJ
Total switching energy
-
0.54
-
mJ
Turn-on delay time
-
24.8
-
ns
Current rise time
-
9.2
-
ns
-
1300
-
A/µs
-
96
-
ns
-
169
-
ns
-
0.22
-
mJ
Eoff
Ets
td(on)
tr
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off-delay time
Current fall time
VCE = 400 V, IC = 15 A,
VGE = 15 V, RG = 12 Ω
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching" )
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
-
0.61
-
mJ
Total switching energy
-
0.83
-
mJ
Eoff
Ets
tsc
Short-circuit withstand time
VCC ≤ 400 V, VGE = 15 V,
TJstart = 150 °C
6
VCC ≤ 400 V, VGE = 13 V,
TJstart = 150 °C
10
µs
Notes:
(1)Including
the reverse recovery of the diode.
(2)Including
the tail of the collector current.
Table 7: Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
trr
Reverse recovery time
Qrr
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 15 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/µs
(see Figure 29: " Test circuit
for inductive load switching")
IF = 15 A, VR = 400 V,
VGE = 15 V,
di/dt = 1000 A/µs,
TJ = 175 °C
(see Figure 29: " Test circuit
for inductive load switching")
DocID028488 Rev 3
Min.
Typ.
Max.
Unit
-
142
ns
-
525
nC
-
13.4
A
-
790
A/µs
-
64
µJ
-
241
ns
-
1690
nC
-
20
A
-
420
A/µs
-
176
µJ
5/17
Electrical characteristics
2.1
STGF15M65DF2
Electrical characteristics (curves)
Figure 2: Power dissipation vs. case temperature
Figure 3: Collector current vs. case temperature
Figure 4: Output characteristics (TJ = 25 °C)
Figure 5: Output characteristics (TJ = 175 °C)
Figure 6: VCE(sat) vs. junction temperature
Figure 7: VCE(sat) vs. collector current
6/17
DocID028488 Rev 3
STGF15M65DF2
Electrical characteristics
Figure 8: Collector current vs. switching frequency
Figure 9: Forward bias safe operating area
Figure 10: Transfer characteristics
Figure 11: Diode VF vs. forward current
Figure 12: Normalized VGE(th) vs. junction
temperature
Figure 13: Normalized V(BR)CES vs. junction
temperature
DocID028488 Rev 3
7/17
Electrical characteristics
STGF15M65DF2
Figure 14: Capacitance variations
Figure 15: Gate charge vs. gate-emitter voltage
Figure 16: Switching energy vs. collector current
Figure 17: Switching energy vs. gate resistance
Figure 18: Switching energy vs. temperature
Figure 19: Switching energy vs. collector emitter
voltage
8/17
DocID028488 Rev 3
STGF15M65DF2
Electrical characteristics
Figure 20: Short-circuit time and current vs. VGE
Figure 21: Switching times vs. collector current
Figure 22: Switching times vs. gate resistance
Figure 23: Reverse recovery current vs. diode
current slope
Figure 24: Reverse recovery time vs. diode current
slope
Figure 25: Reverse recovery charge vs. diode
current slope
DocID028488 Rev 3
9/17
Electrical characteristics
STGF15M65DF2
Figure 26: Reverse recovery energy vs. diode current slope
Figure 27: Thermal impedance for IGBT
ZthTO2T_B
K
δ=0.5
0.2
0.1
10
0.05
-1
0.02
Zth=k Rthj-c
δ=tp/t
0.01
Single pulse
tp
t
-2
10 -5
10
10/17
10
-4
10
-3
10
-2
DocID028488 Rev 3
10
-1
tp (s)
STGF15M65DF2
Electrical characteristics
Figure 28: Thermal impedance for diode
DocID028488 Rev 3
11/17
Test circuits
3
STGF15M65DF2
Test circuits
Figure 29: Test circuit for inductive load
switching
C
A
Figure 30: Gate charge test circuit
A
L=100 µH
G
E
B
B
3.3
µF
C
G
+
RG
VCC
1000
µF
D.U.T
E
-
AM01504v 1
Figure 31: Switching waveform
Figure 32: Diode reverse recovery waveform
di/dt
Qrr
trr
IF
ts
tf
t
IRRM
10%
IRRM
VRRM
dv/dt
AM01507v1
12/17
DocID028488 Rev 3
STGF15M65DF2
4
Package information
Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
DocID028488 Rev 3
13/17
Package information
4.1
STGF15M65DF2
TO-220FP package information
Figure 33: TO-220FP package outline
7012510_Rev_12_B
14/17
DocID028488 Rev 3
STGF15M65DF2
Package information
Table 8: TO-220FP package mechanical data
mm
Dim.
Min.
Typ.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
DocID028488 Rev 3
15/17
Revision history
5
STGF15M65DF2
Revision history
Table 9: Document revision history
Date
Revision
14-Oct-2015
1
First release.
2
Datasheet promoted from preliminary data to production data.
Changed Figure 11: "Diode VF vs. forward current".
Updated: Table 2: "Absolute maximum ratings" and Table 6: "IGBT
switching characteristics (inductive load)".
Updated: Figure 16: "Switching energy vs. collector current", Figure
17: "Switching energy vs. gate resistance", Figure 18: "Switching
energy vs. temperature" and Figure 19: "Switching energy vs.
collector emitter voltage".
3
Modified: title, features and applications on cover page.
Modified Table 4: "Static characteristics", Table 5: "Dynamic
characteristics", Table 7: "Diode switching characteristics (inductive
load)"
Updated Section 4: "Package information".
Minor text changes.
22-Aug-2016
04-May-2017
16/17
Changes
DocID028488 Rev 3
STGF15M65DF2
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DocID028488 Rev 3
17/17