STGF20M65DF2
Datasheet
Trench gate field-stop, M series, 650 V, 20 A, low-loss IGBT
Features
1
2
3
•
•
High short-circuit withstand time
VCE(sat) = 1.55 V (typ.) @ IC = 20 A
•
•
•
•
Tight parameter distribution
Safer paralleling
Low thermal resistance
Soft and very fast recovery antiparallel diode
TO-220FP
Applications
C (2)
•
•
•
•
G (1)
Motor control
UPS
PFC
General-purpose inverters
Description
Sc12850_no_tab
This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal
balance between inverter system performance and efficiency where the low-loss and
the short-circuit functionality is essential. Furthermore, the positive VCE(sat)
temperature coefficient and the tight parameter distribution result in safer paralleling
operation.
E (3)
Product status link
STGF20M65DF2
Product summary
Order code
STGF20M65DF2
Marking
G20M65DF2
Package
TO-220FP
Packing
Tube
DS11363 - Rev 4 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com
STGF20M65DF2
Electrical ratings
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Value
Unit
Collector-emitter voltage (VGE = 0)
650
V
IC(1)
Continuous collector current at TC = 25 °C
40
A
IC(1)
Continuous collector current at TC = 100 °C
20
A
Pulsed collector current
80
A
VGE
Gate-emitter voltage
±20
V
IF(1)
Continuous forward current at TC = 25 °C
40
A
IF
Continuous forward current at TC = 100 °C
20
A
IFP(2)
Pulsed forward current
80
A
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s, TC = 25 °C)
2.5
kV
PTOT
Total dissipation at TC = 25 °C
32.6
W
TSTG
Storage temperature range
-55 to 150
°C
Operating junction temperature range
-55 to 175
°C
Value
Unit
VCES
ICP
(2)
(1)
TJ
Parameter
1. Limited by maximum junction temperature.
2. Pulse width limited by maximum junction temperature.
Table 2. Thermal data
Symbol
DS11363 - Rev 4
Parameter
RthJC
Thermal resistance junction-case IGBT
4.6
°C/W
RthJC
Thermal resistance junction-case diode
6.25
°C/W
RthJA
Thermal resistance junction-ambient
62.5
°C/W
page 2/16
STGF20M65DF2
Electrical characteristics
2
Electrical characteristics
TC = 25 °C unless otherwise specified
Table 3. Static characteristics
Symbol
V(BR)CES
VCE(sat)
VF
Parameter
Test conditions
Collector-emitter breakdown
voltage
Collector-emitter saturation
voltage
Forward on-voltage
VGE = 0 V, IC = 250 μA
Min.
Typ.
650
1.55
VGE = 15 V, IC = 20 A,
TJ = 125 °C
1.95
VGE = 15 V, IC = 20 A,
TJ = 175 °C
2.1
IF = 20 A
1.85
IF = 20 A, TJ = 125 °C
1.65
IF = 20 A, TJ = 175 °C
1.55
Gate threshold voltage
VCE = VGE, IC = 500 µA
ICES
Collector cut-off current
IGES
Gate-emitter leakage current
5
Unit
V
VGE = 15 V, IC = 20 A
VGE(th)
Max.
6
2.0
V
V
7
V
VGE = 0 V, VCE = 650 V
25
µA
VCE = 0 V, VGE = ± 20 V
250
nA
Unit
Table 4. Dynamic characteristics
Symbol
Cies
Input capacitance
Coes
Output capacitance
Cres
Reverse transfer capacitance
Test conditions
VCE = 25 V, f = 1 MHz, VGE = 0 V
Min.
Typ.
Max.
-
1688
-
-
95
-
-
35
-
Qg
Total gate charge
VCC = 520 V, IC = 20 A,
-
63
-
Qge
Gate-emitter charge
VGE = 0 to 15 V
-
15
-
Gate-collector charge
(see Figure 29. Gate charge test
circuit)
-
26
-
Qgc
DS11363 - Rev 4
Parameter
pF
nC
page 3/16
STGF20M65DF2
Electrical characteristics
Table 5. IGBT switching characteristics (inductive load)
Symbol
td(on)
tr
Parameter
Test conditions
Min.
Turn-on delay time
Current rise time
(di/dt)on
td(off)
tf
Turn-on current slope
Turn-off delay time
Current fall time
VCE = 400 V, IC = 20 A,
VGE = 15 V, RG = 12 Ω
(see Figure 28. Test circuit for
inductive load switching)
Typ.
Max.
Unit
26
-
ns
10.8
-
ns
1409
-
A/µs
108
-
ns
65
-
ns
0.14
-
mJ
Eon(1)
Turn-on switching energy
(2)
Turn-off switching energy
0.56
-
mJ
Total switching energy
0.7
-
mJ
Turn-on delay time
28.4
-
ns
Current rise time
11.2
-
ns
Eoff
Ets
td(on)
tr
(di/dt)on
td(off)
Turn-on current slope
VCE = 400 V, IC = 20 A,
1393
-
A/µs
Turn-off delay time
VGE = 15 V, RG = 12 Ω,
107
-
ns
145
-
ns
0.3
-
mJ
Current fall time
TJ = 175 °C
Eon
(1)
Turn-on switching energy
(see Figure 28. Test circuit for
inductive load switching)
Eoff(2)
Turn-off switching energy
0.85
-
mJ
Total switching energy
1.15
-
mJ
tf
Ets
tsc
Short-circuit withstand time
VCC = 400 V, VGE = 13 V,
TJstart = 150 °C
10
-
VCC = 400 V, VGE = 15 V,
TJstart = 150 °C
6
-
µs
1. Including the reverse recovery of the diode.
2. Including the tail of the collector current.
Table 6. Diode switching characteristics (inductive load)
Symbol
Test conditions
Min.
Typ.
Max.
Unit
-
166
ns
trr
Reverse recovery time
Qrr
Reverse recovery charge
IF = 20 A, VR = 400 V,
-
690
nC
Irrm
Reverse recovery current
VGE = 15 V, di/dt = 1000 A/µs
-
13.2
A
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
(see Figure 28. Test circuit for
inductive load switching)
-
769
A/µs
Err
Reverse recovery energy
-
81
µJ
trr
Reverse recovery time
-
281
ns
-
2010
nC
-
19.6
A
-
370
A/µs
-
215
µJ
Qrr
DS11363 - Rev 4
Parameter
Reverse recovery charge
Irrm
Reverse recovery current
dIrr/dt
Peak rate of fall of reverse
recovery current during tb
Err
Reverse recovery energy
IF = 20 A, VR = 400 V,
VGE = 15 V, TJ = 175 °C,
di/dt = 1000 A/µs
(see Figure 28. Test circuit for
inductive load switching)
page 4/16
STGF20M65DF2
Electrical characteristics (curves)
2.1
Electrical characteristics (curves)
Figure 1. Power dissipation vs case temperature
P TOT
(W)
IGBT30101520M65FPDT
VGE ≥ 15 V, TJ ≤ 175 °C
30
Figure 2. Collector current vs case temperature
IGBT29101520M65FCCT
IC
(A) VGE ≥ 15 V, TJ ≤ 175 °C
20
25
15
20
15
10
10
5
5
0
-50
0
50
100
150
TC (°C)
Figure 3. Output characteristics (TJ = 25 °C)
IC
(A)
60
IGBT29101520M65FOC25
0
50
100
150
TC (°C)
Figure 4. Output characteristics (TJ = 175 °C)
IC
(A)
IGBT29101520M65FOC175
V GE =15 V
13 V
V GE = 15 V
0
-50
60
11 V
40
13 V
40
11 V
9V
20
0
0
20
7V
1
2
3
4
5
V CE (V)
Figure 5. VCE(sat) vs junction temperature
V CE(SAT)
(V)
3.0
0
0
9V
7V
1
2
3
4
5
V CE (V)
Figure 6. VCE(sat) vs collector current
IGBT29101520M65FVCET
V GE = 15 V
IGBT29101520M65FVCEC
V CE(SAT)
(V)
I C =40 A
3.0
2.6
V GE = 15 V
2.6
I C =20 A
2.2
2.2
T j = 25 °C
T j = 175 °C
1.8
1.8
T j = - 40 °C
1.4
I C =10 A
1.4
1.0
1
-50
DS11363 - Rev 4
0
50
100
150
T J (°C)
0.6
0
10
20
30
40
I C (A)
page 5/16
STGF20M65DF2
Electrical characteristics (curves)
Figure 7. Collector current vs switching frequency
IC
(A)
Rectangular current shape
(duty cycle = 0.5, VCC = 400 V, RG = 12 Ω
VGE = 0/15 V , Tj = 175 °C
IGBT29101520M65FCCS
Figure 8. Forward bias safe operating area
IC
(A)
IGBT29101520M65FFSOA
1 µs
16
TC = 80°C
12
10 µs
101
8
TC = 100°C
100 µs
4
single pulse, TC = 25°C,
0
10 0
10 1
f (kHz)
10 2
Figure 9. Transfer characteristics
IC
(A)
IGBT29101520M65FTCH
VCE = 6 V
60
TJ = 25 °C
VCE (V)
Figure 10. Diode VF vs forward current
VF
(V)
2.2
50
1 ms
100 TJ ≤175 °C, VGE = 15 V
100
101
102
IGBT30101520M65FDVF
T j = -40 °C
T j = 25 °C
1.8
40
1.4
T j = 175 °C
30
1.0
20
TJ = 175 °C
0.6
10
0
6
7
8
9
10
11
VGE (V)
Figure 11. Normalized VGE(th) vs junction temperature
V GE(th)
(Norm.)
IGBT29101520M65FNVGE
VCE = VGE, IC = 500 μΑ
1.1
0.2
0
V (BR)CES
(Norm.)
0.9
0.96
0.8
0.92
DS11363 - Rev 4
50
100
150
T J (°C)
30
I F (A)
IGBT29101520M65FNVBR
I C = 250 µA
1.04
1.0
0
20
Figure 12. Normalized V(BR)CES vs junction temperature
1.0
0.7
-50
10
0.88
-50
0
50
100
150
T J(°C)
page 6/16
STGF20M65DF2
Electrical characteristics (curves)
Figure 13. Capacitance variations
C
(pF)
IGBT29101520M65FCVR
C ies
Figure 14. Gate charge vs gate-emitter voltage
VGE
(V)
IGBT29101520M65FGCGE
VCC = 520 V, IC = 20 A, IG =1mA
16
10 3
C oes
10
2
12
C res
8
10 1
4
f = 1 MHz
10 0
10 -1
10 0
10 1
10 2
V CE (V)
Figure 15. Switching loss vs collector current
E
(mJ)
IGBT29101520M65FSLC
VCC = 400 V, RG = 12 Ω,
VGE = 15 V, TJ = 175 °C
0
0
10
20
30
E
(mJ)
70
Qg (nC)
IGBT29101520M65FSLG
VCC = 400 V, IC = 20 A, VGE = 15 V, Tj = 175 °C
2.0
E tot
1.6
E tot
1.2
E off
0.8
E off
0.8
0.4
10
20
30
40
IGBT29101520M65FSLT
V CC =400 V, I C = 20 A, R g = 12 Ω, V GE = 15 V
80
120
RG (Ω)
Figure 18. Switching loss vs collector emitter voltage
E
(mJ)
IGBT29101520M65FSLV
I C = 20 A, R g = 12 Ω, V GE = 15 V, T j = 175 °C
1.2
E tot
1.0
E off
0.6
E tot
0.8
E off
0.6
0.4
0
0
40
1.4
1.0
0.2
0
0
I C (A)
Figure 17. Switching loss vs temperature
0.8
E on
0.4
E on
0.0
0
DS11363 - Rev 4
60
Figure 16. Switching loss vs gate resistance
1.6
E
(mJ)
50
2.4
2.0
1.2
40
0.4
E on
E on
0.2
50
100
150
T J (°C)
0
150
250
350
450
V CE (V)
page 7/16
STGF20M65DF2
Electrical characteristics (curves)
Figure 19. Short-circuit time and current vs VGE
IGBT29101520M65FSCV I SC
t sc
(µs)
(A)
T j ≤ 150 °C
V CC ≤ 400 V
20
10
IGBT30101520M65FSTC
t
(ns) VCC = 400 V, VGE = 15 V, RG = 12 Ω, Tj = 175°C
130
tf
10 2
t SC
15
Figure 20. Switching times vs collector current
t d(off)
100
70
I SC
5
t d(on)
10 1
tr
40
0
9
10
11
12
13
14
15
10
V GE (V)
Figure 21. Switching times vs gate resistance
t
(ns)
IGBT29101520M65FSTR
VCC = 400 V, VGE = 15 V, IC = 20 A, Tj = 175 °C
10 0
0
10
20
30
IC (A)
40
Figure 22. Reverse recovery current vs diode current
slope
I rrm
(A)
IGBT29101520M65FRRC
VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C
t d(off)
tf
35
10 2
t d(on)
25
10
tr
1
15
10 0
0
40
80
120
RG (Ω)
Figure 23. Reverse recovery time vs diode current slope
t rr
(ns)
IGBT20101520M65FRRT
VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C
5
200
800
1400
2000
di/dt (A/µs)
Figure 24. Reverse recovery charge vs diode current
slope
Q rr
(µC)
IGBT29101520M65FRRQ
VCC = 400 V, VGE = 15 V, IF = 20 A, TJ = 175 °C
350
2.1
300
2.05
250
2
200
150
200
DS11363 - Rev 4
800
1400
2000
di/dt (A/µs)
1.95
200
800
1400
2000
di/dt (A/µs)
page 8/16
STGF20M65DF2
Electrical characteristics (curves)
Figure 25. Reverse recovery energy vs diode current slope
IGBT29101520M65FRRE
Err
(mJ) VCC = 400 V, VGE = 15 V, IF = 20 A, Tj = 175 °C
0.25
0.20
0.15
0.10
0.05
200
800
1400
2000
di/dt (A/µs)
Figure 26. Thermal impedance for IGBT
ZthTOF2T_B
10-1
Zth
Zth= k*R
k R thj-c
thj-C
δδ==tptp/ Ƭ
/Ƭ
10-2
tpp
10-3
10-5
10-4
10-3
10-2
10-1
ƬƬ
100
tp (s)
Figure 27. Thermal impedance for diode
K
GC20940
10 -1
10 -2
10 -3
10 -4
DS11363 - Rev 4
10 -3
10 -2
10 -1
10 0
t p (s)
page 9/16
STGF20M65DF2
Test circuits
3
Test circuits
Figure 28. Test circuit for inductive load switching
C
A
Figure 29. Gate charge test circuit
A
k
L=100 µH
G
E
B
B
3.3
µF
C
G
+
k
RG
1000
µF
VCC
k
D.U.T
k
E
k
k
AM01505v1
AM01504v1
Figure 31. Diode reverse recovery waveform
Figure 30. Switching waveform
90%
10%
VG
90%
VCE
10%
Tr(Voff)
Tcross
25
90%
IC
Td(on)
Ton
10%
Td(off)
Tr(Ion)
Tf
Toff
AM01506v1
DS11363 - Rev 4
page 10/16
STGF20M65DF2
Package information
4
Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK®
packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions
and product status are available at: www.st.com. ECOPACK® is an ST trademark.
DS11363 - Rev 4
page 11/16
STGF20M65DF2
TO-220FP package information
4.1
TO-220FP package information
Figure 32. TO-220FP package outline
7012510_Rev_12_B
DS11363 - Rev 4
page 12/16
STGF20M65DF2
TO-220FP package information
Table 7. TO-220FP package mechanical data
Dim.
mm
Min.
Max.
A
4.4
4.6
B
2.5
2.7
D
2.5
2.75
E
0.45
0.7
F
0.75
1
F1
1.15
1.70
F2
1.15
1.70
G
4.95
5.2
G1
2.4
2.7
H
10
10.4
L2
DS11363 - Rev 4
Typ.
16
L3
28.6
30.6
L4
9.8
10.6
L5
2.9
3.6
L6
15.9
16.4
L7
9
9.3
Dia
3
3.2
page 13/16
STGF20M65DF2
Revision history
Table 8. Document revision history
DS11363 - Rev 4
Date
Revision
Changes
02-Nov-2015
1
First release.
24-Feb-2016
2
Document status promoted from preliminary to production data
10-Mar-2016
3
Updated Figure 13: "Normalized V(BR)CES vs. junction temperature . Minor
text changes.
08-Oct-2018
4
Updated Table 3. Static characteristics.
Minor text changes
page 14/16
STGF20M65DF2
Contents
Contents
1
Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2
2
Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2.1
Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3
Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10
4
Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11
4.1
TO-220FP package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .14
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15
DS11363 - Rev 4
page 15/16
STGF20M65DF2
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© 2018 STMicroelectronics – All rights reserved
DS11363 - Rev 4
page 16/16