STGYA120M65DF2

STGYA120M65DF2 Trench gate field-stop IGBT, M series 650 V, 120 A low loss in a Max247 long leads package Datasheet - production data Features         6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C Applications Figure 1: Internal schematic diagram     Motor control UPS PFC General purpose inverter Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code Marking Package Packing STGYA120M65DF2 G120M65DF2 Max247 long leads Tube September 2017 DocID029193 Rev 5 This is information on a product in full production. 1/17 www.st.com Contents STGYA120M65DF2 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 12 4 Package information ..................................................................... 13 4.1 5 2/17 Max247 long leads package information ......................................... 14 Revision history ............................................................................ 16 DocID029193 Rev 5 STGYA120M65DF2 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit V VCES Collector-emitter voltage (VGE = 0 V) 650 IC(1) Continuous collector current at TC = 25 °C 160 IC Continuous collector current at TC = 100 °C 120 ICP(2) Pulsed collector current 360 A VGE Gate-emitter voltage ± 20 V Continuous forward current at TC = 25 °C 160 Continuous forward current at TC = 100 °C 120 IFP(2) Pulsed forward current 360 A PTOT Total dissipation at TC = 25 °C 625 W TSTG Storage temperature range - 55 to 150 Operating junction temperature range - 55 to 175 IF (1) IF TJ A A °C Notes: (1)Current (2)Pulse level is limited by bond wires. width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter Value RthJC Thermal resistance junction-case IGBT 0.24 RthJC Thermal resistance junction-case diode 0.6 RthJA Thermal resistance junction-ambient 50 DocID029193 Rev 5 Unit °C/W 3/17 Electrical characteristics 2 STGYA120M65DF2 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol Parameter V(BR)CES Collector-emitter breakdown voltage VCE(sat) VF Collector-emitter saturation voltage Forward on-voltage Test conditions Min. VGE = 0 V, IC = 250 µA 650 Typ. 1.65 VGE = 15 V, IC = 120 A, TJ = 125 °C 1.95 VGE = 15 V, IC = 120 A, TJ = 175 °C 2.1 IF = 120 A 1.9 IF = 120 A, TJ = 125 °C 1.7 IF = 120 A, TJ = 175 °C 1.6 Gate threshold voltage VCE = VGE, IC = 2 mA ICES Collector cut-off current IGES Gate-emitter leakage current Symbol Parameter 5 Unit V VGE = 15 V, IC = 120 A VGE(th) Max. 6 2.15 V 2.6 V 7 V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ± 20 V ± 250 µA Max. Unit Table 5: Dynamic characteristics 4/17 Test conditions Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCE= 25 V, f = 1 MHz, VGE = 0 V VCC = 520 V, IC = 120 A, VGE = 0 to 15 V (see Figure 30: " Gate charge test circuit") DocID029193 Rev 5 Min. Typ. - 11 - - 0.61 - - 0.25 - - 420 - - 90 - - 160 - nF nC STGYA120M65DF2 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 66 - ns Current rise time 38 - ns 2500 - A/µs 185 - ns 85 - ns 1.8 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 400 V, IC = 120 A, VGE = 15 V, RG = 4.7 Ω (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 4.41 - mJ Total switching energy 6.21 - mJ Turn-on delay time 62 - ns Current rise time 48 - ns 2016 - A/µs 187 - ns 164 - ns 4.4 - mJ Eoff Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 400 V, IC = 120 A, VGE = 15 V, RG = 4.7 Ω TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 6.0 - mJ Total switching energy 10.4 - mJ Eoff Ets tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs Notes: (1)Including the reverse recovery of the diode. (2)Including the tail of the collector current. Table 7: Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy trr Reverse recovery time Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 120 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/µs (see Figure 29: " Test circuit for inductive load switching") IF = 120 A, VR = 400 V, VGE = 15 V , di/dt = 1000 A/µs, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching") DocID029193 Rev 5 Min. Typ. Max. Unit - 202 - ns - 2.9 - µC - 32.5 - A - 500 - A/µs - 500 - µJ - 320 - ns - 11.2 - µC - 62 - A - 270 - A/µs - 1710 - µJ 5/17 Electrical characteristics 2.1 STGYA120M65DF2 Electrical characteristics (curves) Figure 2: Power dissipation vs. case temperature Figure 3: Collector current vs. case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs. junction temperature Figure 7: VCE(sat) vs. collector current 6/17 DocID029193 Rev 5 STGYA120M65DF2 Electrical characteristics Figure 8: Collector current vs. switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs. forward current Figure 12: Normalized VGE(th) vs. junction temperature Figure 13: Normalized V(BR)CES vs. junction temperature DocID029193 Rev 5 7/17 Electrical characteristics STGYA120M65DF2 Figure 14: Capacitance variations Figure 15: Gate charge vs. gate-emitter voltage Figure 16: Switching energy vs. collector current Figure 17: Switching energy vs. gate resistance Figure 18: Switching energy vs. temperature Figure 19: Switching energy vs. collector emitter voltage 8/17 DocID029193 Rev 5 STGYA120M65DF2 Electrical characteristics Figure 20: Short circuit time and current vs. VGE Figure 21: Switching times vs. collector current Figure 22: Switching times vs. gate resistance Figure 23: Reverse recovery current vs. diode current slope Figure 24: Reverse recovery time vs. diode current slope Figure 25: Reverse recovery charge vs. diode current slope DocID029193 Rev 5 9/17 Electrical characteristics STGYA120M65DF2 Figure 26: Reverse recovery energy vs. diode current slope 10/17 DocID029193 Rev 5 STGYA120M65DF2 Electrical characteristics Figure 27: Thermal impedance for IGBT Figure 28: Thermal impedance for diode DocID029193 Rev 5 11/17 Test circuits 3 STGYA120M65DF2 Test circuits Figure 29: Test circuit for inductive load switching C A Figure 30: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG VCC 1000 µF D.U.T E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform 12/17 DocID029193 Rev 5 STGYA120M65DF2 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID029193 Rev 5 13/17 Package information 4.1 STGYA120M65DF2 Max247 long leads package information Figure 33: Max247 long leads package outline Section C-C, D-D, E-E DM00176969_Rev_A 14/17 DocID029193 Rev 5 STGYA120M65DF2 Package information Table 8: Max247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 a 0 0.15 a' 0 0.15 b 1.16 b1 1.15 b2 1.96 b3 1.95 b4 2.96 b5 2.95 1.26 1.20 1.22 2.06 2.00 2.02 3.06 3.00 3.02 b6 2.25 b7 3.25 c 0.59 c1 0.58 0.60 0.66 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.17 1.35 D3 0.75 1.00 1.25 E 15.70 15.80 15.90 E1 13.10 13.26 13.50 E3 1.35 1.45 1.55 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 4.30 M 0.70 P 2.40 2.50 2.60 R 1.90 2.00 2.10 T 9.80 10.20 U 6.00 6.40 DocID029193 Rev 5 1.30 15/17 Revision history 5 STGYA120M65DF2 Revision history Table 9: Document revision history 16/17 Date Revision Changes 06-Apr-2016 1 First release. 10-May-2016 2 Document status promoted to production data. Added Section 2.1: "Electrical characteristics (curves)" 15-Jun-2016 3 Updated Figure 1: "Internal schematic diagram" and Table 2: "Absolute maximum ratings". Updated Section 2.1: "Electrical characteristics (curves)". Minor text changes. 12-Aug-2016 4 Updated Table 7: "Diode switching characteristics (inductive load)" and Figure 25: Reverse recovery charge vs. diode current slope”. Minor text changes. 13-Sep-2017 5 Updated title, features and application in cover page. Updated Figure 13: "Normalized V(BR)CES vs. junction temperature". Minor text changes. DocID029193 Rev 5 STGYA120M65DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID029193 Rev 5 17/17