STGYA50H120DF2

STGYA50H120DF2 Datasheet Trench gate field-stop, 1200 V, 50 A, high-speed H series IGBT in a Max247 long leads package Features TAB 1 2 3 TAB 3 2 1 Max247 long leads • Maximum junction temperature: TJ = 175 °C • • 5 μs of short-circuit withstand time Low VCE(sat) = 2.1 V (typ.) @ IC = 50 A • • Tight parameter distribution Positive VCE(sat) temperature coefficient • • Low thermal resistance Very fast recovery antiparallel diode Applications • • • • C(2, TAB) G(1) UPS Solar inverters Welding PFC Description E(3) NG1E3C2T This device is IGBT developed using an advanced proprietary trench gate fieldstop structure. This device is part of the H series of IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of high switching frequency converters. Moreover, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status link STGYA50H120DF2 Product summary Order code STGYA50H120DF2 Marking G50H120DF2 Package Max247 long leads Packing Tube DS13891 - Rev 1 - January 2022 For further information contact your local STMicroelectronics sales office. www.st.com STGYA50H120DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 1200 V Continuous collector current at TC = 25 °C 100 Continuous collector current at TC = 100 °C 50 ICP(1) Pulsed collector current 200 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 100 Continuous forward current at TC = 100 °C 50 IFP(1) Pulsed forward current 200 A PTOT Total power dissipation at TC = 25 °C 535 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit VCES IC IF TJ Parameter A A 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol RthJC RthJA DS13891 - Rev 1 Parameter Thermal resistance, junction-to-case IGBT 0.28 Thermal resistance, junction-to-case diode 0.62 Thermal resistance, junction-to-ambient 50 °C/W °C/W page 2/15 STGYA50H120DF2 Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VF Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 1200 2.1 VGE = 15 V, IC = 50 A, TJ = 125 °C 2.35 VGE = 15 V, IC = 50 A, TJ = 175 °C 2.5 IF = 50 A 3.8 IF = 50 A, TJ = 125 °C 2.8 IF = 50 A, TJ = 175 °C 2.6 Gate threshold voltage VCE = VGE, IC = 2 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 50 A VGE(th) Max. 6 2.6 V V 7 V VGE = 0 V, VCE = 1200 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Table 4. Dynamic characteristics Symbol DS13891 - Rev 1 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 960 V, IC = 50 A, VGE = 0 to 15 V (see Figure 29. Gate charge test circuit) Min. Typ. Max. Unit - 4150 - pF - 288 - pF - 104 - pF - 210 - nC - 29 - nC - 103 - nC page 3/15 STGYA50H120DF2 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Unit Turn-on delay time 40 - ns Current rise time 23 - ns 1800 - A/µs 284 - ns 54 - ns 2 - mJ Turn-on current slope Turn-off delay time Current fall time Test conditions Min. VCE = 600 V, IC = 50 A, VGE = 15 V, RG = 10 Ω (see Figure 28. Test circuit for inductive load switching) Eon (1) Turn-on switching energy Eoff(2) Turn-off switching energy 2.1 - mJ Total switching energy 4.1 - mJ Turn-on delay time 36 - ns Current rise time 27 - ns 1490 - A/µs 313 - ns 167 - ns 3.18 - mJ Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off delay time Current fall time VCE = 600 V, IC = 50 A, VGE = 15 V, RG = 10 Ω, TJ = 175 °C (see Figure 28. Test circuit for inductive load switching) Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy 3.47 - mJ Ets Total switching energy 6.65 - mJ tsc Short-circuit withstand time - µs VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C 5 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS13891 - Rev 1 Parameter Test conditions Min. Typ. Max. Unit - 340 - ns trr Reverse recovery time Qrr Reverse recovery charge IF = 50 A, VR = 600 V, - 1.7 - µC Irrm Reverse recovery current VGE = 15 V, di/dt = 1550 A/µs - 22 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 28. Test circuit for inductive load switching) - 1310 - A/µs Err Reverse recovery energy - 0.71 - mJ trr Reverse recovery time - 724 - ns Qrr Reverse recovery charge IF = 50 A, VR = 600 V, - 6.7 - µC Irrm Reverse recovery current VGE = 15 V, di/dt = 1550 A/µs, TJ = 175 °C - 37 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 28. Test circuit for inductive load switching) - 210 - A/µs Err Reverse recovery energy - 3 - mJ page 4/15 STGYA50H120DF2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Total power dissipation vs temperature PTOT (W) GADG221220211023PDT VGE ≥ 15 V, TJ ≤ 175 °C Figure 2. Collector current vs case temperature IC (A) 400 80 200 40 0 25 75 125 175 TC (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) V GE 150 GADG201220211350OC25 = 15 V VGE = 13 V 11 V 9V 50 0 0 4 6 8 3.1 VCE (V) GADG201220211352VCET IC (A) 11 V VGE = 13 V 0 0 9V 7V 2 4 6 VCE(sat) (V) VCE (V) GADG201220211353VCEC VGE=15 V TJ= 175 °C 3.5 IC = 50 A 2.5 TJ= -40 °C 1.9 IC = 25 A 1.5 DS13891 - Rev 1 8 Figure 6. VCE(sat) vs collector current 4.5 IC = 100 A TC (°C) GADG201220211351OC175 VGE = 15 V 2.7 1.1 -50 175 Figure 4. Output characteristics (TJ = 175 °C) VGE=15 V 2.3 125 50 Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) 75 100 7V 2 VGE ≥ 15 V, TJ ≤ 175 °C 0 25 150 100 GADG201220211349CCT 0 50 1.5 100 150 TJ(°C) 0.5 0 TJ= 25 °C 50 100 150 IC (A) page 5/15 STGYA50H120DF2 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) IC (A) GADG221220211028CCS Rectangular current shape (duty cycle = 0.5, VCC = 600 V, RG= 10 Ω, VGE= 0/15 V , TJ= 175 °C 120 100 Figure 8. Safe operating area GADG211220211143FSOA tp= 1 µs 10 2 80 tp= 10 µs 60 TC= 80 °C 10 1 40 tp= 100 µs TC= 100 °C VCE(sat) max. 20 0 100 101 f (kHz) 102 10 1 10 2 VCE (V) 10 3 Figure 10. Diode VF vs forward current Figure 9. Transfer characteristics IC (A) 10 0 10 0 tp= 1 ms Single pulse, TC = 25 °C, TJ ≤ 175 °C, VGE = 15 V VF (V) GADG201220211354TCH VCE=10 V GADG221220211041DVF TJ= -40 °C 8 150 6 TJ= 25 °C 100 4 TJ= 175 °C TJ= 175 °C 50 2 0 4 6 8 10 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature VGE(th) (norm) GIPG130320141400FSR IC= 2mA VCE= VGE 1.1 TJ= 25 °C 0 0 50 100 150 IF (A) Figure 12. Normalized V(BR)CES vs junction temperature GIPG130320141405FSR V(BR)CES (norm) 1.06 IC= 2mA 1.0 1.02 0.9 0.98 0.8 0.94 0.7 0.6 -50 DS13891 - Rev 1 0 50 100 150 TJ(°C) 0.9 -50 0 50 100 150 TJ(°C) page 6/15 STGYA50H120DF2 Electrical characteristics (curves) Figure 14. Gate charge vs gate-emitter voltage Figure 13. Capacitance variations C (pF) GADG211220211157CVR Cies GADG201220211355GCGE VGE (V) VCC = 960 V, IC = 50 A, IG = 5 mA 15 10 3 12 9 10 2 Coes 6 Cres 3 VCE (V) 0 0 f = 1 MHz 10 10 -1 1 10 0 10 1 10 2 10 3 Figure 15. Switching energy vs collector current GADG201220211356SLC E (mJ) VCC = 600 V, RG = 10 Ω, VGE = 15 V, TJ=175 ℃ 40 80 120 160 200 Qg (nC) Figure 16. Switching energy vs gate resistance GADG201220211359SLG E (mJ) VCC = 600 V, VGE = 15 V, IC = 50 A, TJ = 175 ℃ 6 4 Eoff 4 Eoff Eon 2 0 0 Eon 3 20 40 60 80 IC (A) Figure 17. Switching energy vs junction temperature E (mJ) VCC = 600 V, IC VGE = 15 V GADG201220211357SLT = 50 A, RG = 10 Ω, 3.3 5 10 15 20 RG (Ω) Figure 18. Switching energy vs collector emitter voltage GADG201220211358SLV E (mJ) I = 50 A, RG = 10 Ω, V = 15 V, C GE TJ= 175 ℃ 5 Eon Eoff 4 Eoff 2.8 2 0 3 Eon 2.3 1.8 0 DS13891 - Rev 1 2 50 100 150 TJ (°C) 1 300 400 500 600 700 800 900 VCE (V) page 7/15 STGYA50H120DF2 Electrical characteristics (curves) Figure 19. Switching times vs collector current t (ns) GADG201220211400STC 10 6 VGE=15 V, TJ= 175 ℃ Figure 20. Switching times vs gate resistance GADG201220211401STR t (ns) VCC = 600 V, IC = 50 A, VGE = 15 V TJ = 175 °C td(off) td(off) tf tf 10 2 100 td(on) td(on) tr tr 10 1 0 20 40 60 80 IC (A) Figure 21. Reverse recovery current vs diode current slope Irrm (A) 35 GADG201220211403RRC 6 5 VGE=15 V, 10 0 5 10 15 20 RG (Ω) Figure 22. Reverse recovery time vs diode current slope trr (ns) GADG201220211404RRT 6 5 VGE=15 V, 1600 30 1200 25 20 800 15 10 0 500 1000 1500 2000 di/dt (A/µs) Figure 23. Reverse recovery charge vs diode current slope Qrr (µC) GADG201220211404RRQ 6 5 VGE =15 V, 400 0 500 1000 1500 2000 di/dt (A/µs) Figure 24. Reverse recovery energy vs diode current slope Err (mJ) 6 5 VGE=15 V, GADG201220211405RRE 3 6.5 2 5.5 1 4.5 0 DS13891 - Rev 1 500 1000 1500 2000 di/dt (A/µs) 0 0 500 1000 1500 2000 di/dt (A/µs) page 8/15 STGYA50H120DF2 Electrical characteristics (curves) Figure 25. Normalized transient thermal impedance for IGBT ZthTO2T_A K δ = 0.5 δ = 0.2 δ = 0.05 δ = 0.1 δ = 0.02 10-1 δ = 0.01 Single pulse Zth = k*RthJC δ = tp /t tp 10-2 10-5 t 10-4 10-3 10-2 10-1 tp (s) Figure 26. Normalized transient thermal impedance for diode Zth = k*RthJC δ = tp/t tp t DS13891 - Rev 1 page 9/15 STGYA50H120DF2 Test circuits 3 Test circuits Figure 28. Gate charge test circuit Figure 27. Test circuit for inductive load switching C A A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform di/dt Qrr 90% IF 10% VG trr ts tf 90% VCE 10% IRRM tcross 90% IC td(on) ton td(off) tr(Ion) t IRRM 10% tr(Voff) VRRM 10% tf toff dv/dt AM01506v1 DS13891 - Rev 1 GADG180720171418SA page 10/15 STGYA50H120DF2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 Max247 long leads package information Figure 31. Max247 long leads package outline Section C-C, D-D, E-E Bottom view Top view DM00176969_rev_3 DS13891 - Rev 1 page 11/15 STGYA50H120DF2 Max247 long leads package information Table 7. Max247 long leads package mechanical data Dim. DS13891 - Rev 1 mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 a 0 0.15 a' 0 0.15 b 1.16 1.26 b1 1.15 b2 1.96 b3 1.95 b4 2.96 b5 2.95 1.20 1.22 2.06 2.00 2.02 3.06 3.00 3.02 b6 2.25 b7 3.25 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.17 1.35 D3 0.58 0.68 0.78 D4 2.90 3.00 3.10 E 15.70 15.80 15.90 E1 13.10 13.26 13.50 E3 1.35 1.45 1.55 E4 1.14 1.24 1.34 e 5.34 5.44 5.54 K 4.25 4.35 4.45 L 19.80 19.92 20.10 L1 3.90 4.30 M 0.70 1.30 P 2.40 T 9.80 10.20 U 6.00 6.40 2.50 2.60 page 12/15 STGYA50H120DF2 Revision history Table 8. Document revision history DS13891 - Rev 1 Date Revision 12-Jan-2022 1 Changes First release. page 13/15 STGYA50H120DF2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 Max247 long leads package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 DS13891 - Rev 1 page 14/15 STGYA50H120DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2022 STMicroelectronics – All rights reserved DS13891 - Rev 1 page 15/15