STGYA120M65DF2AG

STGYA120M65DF2AG Datasheet Automotive-grade trench gate field-stop, 650 V, 120 A, low-loss, M series IGBT in a Max247 long leads package Features C(2, TAB) • • • AEC-Q101 qualified 6 µs of short-circuit withstand time VCE(sat) = 1.65 V (typ.) @ IC = 120 A • • • Tight parameter distribution Safer paralleling Positive VCE(sat) temperature coefficient • • • Low thermal resistance Soft and very fast recovery antiparallel diode Maximum junction temperature: TJ = 175 °C Applications G(1) • • • • E(3) Motor control UPS PFC General purpose inverters NG1E3C2T Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGYA120M65DF2AG Product summary Order code STGYA120M65DF2AG Marking G120M65DF2AG Package Max247 long leads Packing Tube DS11783 - Rev 4 - October 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGYA120M65DF2AG Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit Collector-emitter voltage (VGE = 0 V) 650 V IC(1) Continuous collector current at TC = 25 °C 160 IC Continuous collector current at TC = 100 °C 120 ICP(2) Pulsed collector current 360 A VGE Gate-emitter voltage ±20 V Continuous forward current at TC = 25 °C 160 Continuous forward current at TC = 100 °C 120 IFP(2) Pulsed forward current 360 A PTOT Total power dissipation at TC = 25 °C 625 W TSTG Storage temperature range -55 to 150 Operating junction temperature range -55 to 175 VCES (1) IF IF TJ Parameter A A °C 1. Current level is limited by bond wires. 2. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol DS11783 - Rev 4 Parameter Value RthJC Thermal resistance junction-case IGBT 0.24 RthJC Thermal resistance junction-case diode 0.6 RthJA Thermal resistance junction-ambient 50 Unit °C/W page 2/14 STGYA120M65DF2AG Electrical characteristics 2 Electrical characteristics TC = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 250 µA Min. Typ. 650 1.65 VGE = 15 V, IC = 120 A, TJ = 125 °C 1.95 VGE = 15 V, IC = 120 A, TJ = 175 °C 2.1 IF = 120 A 1.9 IF = 120 A, TJ = 125 °C 1.7 IF = 120 A, TJ = 175 °C 1.6 Gate threshold voltage VCE = VGE, IC = 2 mA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 120 A VGE(th) Max. 6 2.15 V 2.6 V 7 V VGE = 0 V, VCE = 650 V 100 µA VCE = 0 V, VGE = ± 20 V ± 250 µA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 11000 - - 610 - - 250 - Qg Total gate charge VCC = 520 V, IC = 120 A, - 420 - Qge Gate-emitter charge VGE = 0 to 15 V - 90 - Gate-collector charge (see Figure 30. Gate charge test circuit) - 160 - Qgc DS11783 - Rev 4 Parameter pF nC page 3/14 STGYA120M65DF2AG Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Unit Turn-on delay time 66 - ns Current rise time 38 - ns 2500 - A/µs 185 - ns 85 - ns 1.8 - mJ Turn-on current slope Turn-off-delay time Current fall time Test conditions Min. VCE = 400 V, IC = 120 A, VGE = 15 V, RG = 4.7 Ω (see Figure 29. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff(2) Turn-off switching energy 4.41 - mJ Total switching energy 6.21 - mJ Turn-on delay time 62 - ns Current rise time 48 - ns Eon Ets td(on) tr Turn-on current slope VCE = 400 V, IC = 120 A, 2016 - A/µs Turn-off-delay time VGE = 15 V, RG = 4.7 Ω, 187 - ns Current fall time TJ = 175 °C 164 - ns Eon(1) Turn-on switching energy (see Figure 29. Test circuit for inductive load switching) 4.4 - mJ (2) Turn-off switching energy 6.0 - mJ Total switching energy 10.4 - mJ (di/dt)on td(off) tf Eoff Ets tsc Short-circuit withstand time VCC ≤ 400 V, VGE = 13 V, TJstart = 150 °C 10 - VCC ≤ 400 V, VGE = 15 V, TJstart = 150 °C 6 - µs 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS11783 - Rev 4 Parameter Test conditions Min. Typ. Max. Unit - 202 - ns trr Reverse recovery time Qrr Reverse recovery charge IF = 120 A, VR = 400 V, - 2.9 - µC Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 32.5 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 29. Test circuit for inductive load switching) - 500 - A/µs Err Reverse recovery energy - 500 - µJ trr Reverse recovery time - 320 - ns - 11.2 - µC - 62 - A - 270 - A/µs - 1710 - µJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 120 A, VR = 400 V, VGE = 15 V, di/dt = 1000 A/μs, TJ = 175 °C (see Figure 29. Test circuit for inductive load switching) page 4/14 STGYA120M65DF2AG Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature P TOT (W) Figure 2. Collector current vs case temperature IC (A) 600 IGBT150620161125CCT 160 500 120 400 300 80 200 40 100 V GE ≥ 15 V, T J ≤ 175 °C 0 -50 0 50 100 150 T C (°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) VGE ≥ 15 V, TJ ≤ 175 °C IGBT150620161126OC25 VGE = 15 V 11 V 9V 120 0 -50 0 50 100 150 TC (°C) Figure 4. Output characteristics (TJ = 175 °C) IC (A) 120 13 V 80 80 40 40 IGBT150620161128OC175 VGE = 15 V 11 V 9V 13 V 7V 7V 0 0 1 2 3 4 VCE (V) Figure 5. VCE(sat) vs junction temperature VCE(SAT) (V) IGBT150620161129VCET 0 0 2 3 4 VCE (V) Figure 6. VCE(sat) vs collector current VCE(SAT) (V) VGE = 15 V 2.5 2.5 1 IGBT150620161130VCEC VGE = 15 V TJ = 175 °C IC = 160 A 2.0 IC = 120 A TJ = 25 °C 2.0 1.5 IC = 60 A 1.5 1.0 -50 DS11783 - Rev 4 TJ = -40 °C 1.0 0 50 100 150 TJ (°C) 0.5 0 40 80 120 IC (A) page 5/14 STGYA120M65DF2AG Electrical characteristics (curves) Figure 7. Collector current vs switching frequency IC (A) 200 IC (A) Rectangular current shape 40 = 0.5, V CC = 400 V, R G = 4.7 Ω , (duty cycle V GE = 0/15 V , T J = 175 °C) 120 102 T C = 80 ºC 160 Figure 8. Forward bias safe operating area tp = 10 µs tp = 100 µs T C = 100 ºC 101 tp = 1 ms tp = 10 ms 80 100 40 0 100 101 f (kHz) 102 10-1 single pulse , TC = 25 °C TJ ≤ 175 °C, VGE = 15 V 100 101 VCE (V) 102 Figure 9. Transfer characteristics Figure 10. Diode VF vs forward current IC (A) VF (V) VCE = 6 V 2.0 120 TJ = 25 T J = 25 °C T J = -40 °C 1.6 80 T J = 175 °C 1.2 0.8 40 TJ = 175 °C 0.4 0.0 0 5 6 7 8 VGE (V) Figure 11. Normalized VGE(th) vs junction temperature V GE(th) (norm.) 0 40 80 120 160 I F (A) Figure 12. Normalized V(BR)CES vs junction temperature V (BR)CES (norm.) V CE = V GE I C = 2mA 1.1 1.06 I C = 250µA 1.0 1.02 0.9 0.98 0.8 0.94 0.7 0.6 -50 DS11783 - Rev 4 0 50 100 150 T J (ºC) 0.90 -50 0 50 100 150 T J (ºC) page 6/14 STGYA120M65DF2AG Electrical characteristics (curves) Figure 13. Capacitance variations C (pF) V GE (V) GADG300920191055CVR CIES 10 4 Figure 14. Gate charge vs gate-emitter voltage 10 3 V CC = 520 V, I C = 120A, I G = 10 mA 15 10 COES f = 1 MHz 10 2 CRES 10 1 10 -1 10 0 10 1 10 2 VCE (V) Figure 15. Switching energy vs collector current E (mJ) VCC= 400 V, RG= 4.7Ω, VGE= 15 V,TJ= 175 °C 24 5 0 0 100 200 300 400 Q g (nC) Figure 16. Switching energy vs gate resistance E (mJ) VCC= 400 V, IC= 120 A, VGE= 15 V,TJ= 175 °C 16 20 12 8 E tot 8 E off E off 4 E on 4 0 E tot 12 16 0 50 100 150 200 I C (A) Figure 17. Switching energy vs temperature E (mJ) VCC= 400 V, IC= 120 A, RG =4.7Ω,VGE= 15 V 0 E on 0 5 10 15 20 RG(Ω) Figure 18. Switching energy vs collector emitter voltage E (mJ) IC= 120 A, RG= 4.7Ω, VGE= 15 V,TJ= 175 °C 9 12 E tot 6 8 E off E tot E off 3 0 DS11783 - Rev 4 4 E on 0 50 100 150 T J (ºC) 0 150 E on 250 350 450 V CE (V) page 7/14 STGYA120M65DF2AG Electrical characteristics (curves) Figure 19. Short circuit time and current vs VGE t SC (µs) V CC ≤ 400 V, T J ≤ 150 °C t SC 16 I SC Isc (A) Figure 20. Switching times vs collector current t (ns) VCC= 400 V, VGE= 15 V, RG= 4.7 Ω, TJ= 175 °C 500 t d(off) tf 12 400 102 t d(on) 8 300 tr 4 8 10 12 14 200 V GE (V) Figure 21. Switching times vs gate resistance t (ns) 101 0 40 80 120 160 200 240 I C (A) Figure 22. Reverse recovery current vs diode current slope Irrm (A) VCC= 400 V, VGE= 15 V, IF= 120 A,TJ= 175 °C 90 t d(off) tf 102 80 t d(on) tr 70 V CC = 400 V, V GE = 15 V, I c = 120 A , T J = 175 °C 101 0 6 12 18 RG(Ω) Figure 23. Reverse recovery time vs diode current slope trr (ns) VCC= 400 V, VGE= 15 V, IF= 120 A, TJ= 175 °C 60 800 1200 1600 2000 2400 di/dt (A/µs) Figure 24. Reverse recovery charge vs diode current slope Qrr (μC) VCC= 400 V, VGE= 15 V, IF= 120A,TJ= 175 °C 320 12.5 300 12.0 280 11.5 260 240 800 DS11783 - Rev 4 1200 1600 2000 2400 di/dt (A/µs) 11.0 800 1200 1600 2000 2400 di/dt (A/µs) page 8/14 STGYA120M65DF2AG Electrical characteristics (curves) Figure 25. Reverse recovery energy vs diode current slope Err (mJ) VCC= 400 V, VGE= 15 V, IF= 120 A,TJ= 175 °C 1.6 1.4 1.2 1.0 800 1200 1600 2000 2400 di/dt (A/µs) Figure 26. Thermal impedance for IGBT K MAX247LL_ZthJC 10 -1 10 -2 10 -5 10 -4 10 -3 10 -2 10 -1 t p (s) Figure 27. Thermal impedance for diode DS11783 - Rev 4 page 9/14 STGYA120M65DF2AG Test circuits 3 Test circuits Figure 29. Gate charge test circuit Figure 28. Test circuit for inductive load switching A C A k L=100 µH G E B B 3.3 µF C G + k VCC 1000 µF k D.U.T RG k E k k AM01505v1 AM01504v1 Figure 31. Diode reverse recovery waveform Figure 30. Switching waveform di/dt 90% IF ts 10% VG Qrr trr tf 90% VCE td(on) ton td(off) tr(Ion) 10% IRRM 90% IC t IRRM 10% tr(Voff) tcross VRRM 10% tf toff AM01506v1 dv/dt GADG180720171418SA DS11783 - Rev 4 page 10/14 STGYA120M65DF2AG Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 Max247 long leads package information Figure 32. Max247 long leads package outline Section C-C, D-D, E-E DM00176969_rev_1 DS11783 - Rev 4 page 11/14 STGYA120M65DF2AG Max247 long leads package information Table 7. Max247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 a 0 0.15 a' 0 0.15 b 1.16 1.26 b1 1.15 b2 1.96 b3 1.95 b4 2.96 b5 2.95 1.20 2.06 2.00 2.02 3.06 3.00 3.02 b6 2.25 b7 3.25 c 0.59 0.66 c1 0.58 0.60 0.62 D 20.90 21.00 21.10 D1 16.25 16.55 16.85 D2 1.05 1.17 1.35 D3 0.75 1.00 1.25 E 15.70 15.80 15.90 E1 13.10 13.26 13.50 E3 1.35 1.45 1.55 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 DS11783 - Rev 4 1.22 4.30 M 0.70 1.30 P 2.40 2.50 2.60 R 1.90 2.00 2.10 T 9.80 10.20 U 6.00 6.40 page 12/14 STGYA120M65DF2AG Revision history Table 8. Document revision history Date Revision 12-Aug-2016 1 12-Dec-2016 2 24-Aug-2017 3 Changes First release. Document status promoted from preliminary to production data. Minor text changes. Updated features and title in cover page. Updated Table 4: "Static characteristics". Minor text changes. Updated Table 4. Dynamic characteristics. 08-Oct-2019 4 Updated Figure 9. Forward bias safe operating area and Figure 14. Capacitance variations. Minor text changes DS11783 - Rev 4 page 13/14 STGYA120M65DF2AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. For additional information about ST trademarks, please refer to www.st.com/trademarks. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2019 STMicroelectronics – All rights reserved DS11783 - Rev 4 page 14/14