STGWA8M120DF3

STGW8M120DF3, STGWA8M120DF3 Trench gate field-stop IGBT, M series 1200 V, 8 A low-loss Datasheet - production data Features       10 µs of short-circuit withstand time VCE(sat) = 1.85 V (typ.) @ IC = 8 A Tight parameter distribution Safer paralleling Low thermal resistance Soft and very fast recovery antiparallel diode Applications     Industrial drives UPS Solar Welding Figure 1: Internal schematic diagram Description These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. Table 1: Device summary Order code STGW8M120DF3 STGWA8M120DF3 October 2017 Marking G8M120DF3 DocID029337 Rev 3 This is information on a product in full production. Package TO-247 TO-247 long leads Packing Tube 1/17 www.st.com Contents STGW8M120DF3, STGWA8M120DF3 Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ................................................................................... 11 4 Package information ..................................................................... 12 5 2/17 4.1 TO-247 package information ........................................................... 12 4.2 TO-247 long leads package information ......................................... 14 Revision history ............................................................................ 16 DocID029337 Rev 3 STGW8M120DF3, STGWA8M120DF3 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0 V) Value Unit 1200 V IC Continuous collector current at TC = 25 °C 16 A IC Continuous collector current at TC = 100 °C 8 A ICP(1) Pulsed collector current 32 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 16 A IF Continuous forward current at TC = 100 °C 8 A IFP(1) Pulsed forward current 32 A PTOT Total dissipation at TC = 25 °C 167 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit TJ Notes: (1)Pulse width limited by maximum junction temperature. Table 3: Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.9 °C/W RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID029337 Rev 3 3/17 Electrical characteristics 2 STGW8M120DF3, STGWA8M120DF3 Electrical characteristics TC = 25 °C unless otherwise specified Table 4: Static characteristics Symbol V(BR)CES VCE(sat) VF Parameter Test conditions Collector-emitter breakdown voltage Collector-emitter saturation voltage Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 1200 1.85 VGE = 15 V, IC = 8 A, TJ = 125 °C 2.1 VGE = 15 V, IC = 8 A, TJ = 175 °C 2.2 IF = 8 A 2.4 IF = 8 A, TJ = 125 °C 1.75 IF = 8 A, TJ = 175 °C 1.55 Gate threshold voltage VCE = VGE, IC = 500 µA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 8 A VGE(th) Max. 6 2.3 V 3.35 V 7 V VGE = 0 V, VCE = 1200 V 25 µA VGE = ±20 V, VCE = 0 V ±250 nA Unit Table 5: Dynamic characteristics Symbol Cies 4/17 Parameter Test conditions Input capacitance VCE = 25 V, f = 1 MHz, VGE = 0 V Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge VCC = 960 V, IC = 8 A, VGE = 0 to 15 V (see Figure 30: " Gate charge test circuit") DocID029337 Rev 3 Min. Typ. Max. - 542 - - 74.4 - - 21 - - 32 - - 4.5 - - 18.5 - pF nC STGW8M120DF3, STGWA8M120DF3 Electrical characteristics Table 6: IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Test conditions Typ. Max. Unit Turn-on delay time 20 - ns Current rise time 8.4 - ns 800 - A/µs 126 - ns 136 - ns 0.39 - mJ Turn-on current slope Turn-off-delay time Current fall time Min. VCE = 600 V, IC = 8 A, VGE = 15 V, RG = 33 Ω (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.37 - mJ Total switching energy 0.76 - mJ Turn-on delay time 19 - ns Current rise time 9.8 - ns 656 - A/µs 134 - ns 222 - ns 0.66 - mJ Eoff Ets td(on) tr (di/dt)on td(off) tf Turn-on current slope Turn-off-delay time Current fall time VCE = 600 V, IC = 8 A, VGE = 15 V, RG = 33 Ω, TJ = 175 °C (see Figure 29: " Test circuit for inductive load switching" ) Eon(1) Turn-on switching energy (2) Turn-off switching energy 0.58 - mJ Ets Total switching energy 1.24 - mJ tsc Short-circuit withstand time - µs Eoff VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C 10 Notes: (1)Including the reverse recovery of the diode (2)Including the tail of the collector current Table 7: Diode switching characteristics (inductive load) Symbol trr Parameter Test conditions Reverse recovery time IF = 8 A, VR = 600 V, VGE = 15 V, RG = 33 Ω (di/dt = 1000 A/µs) (see Figure 29: " Test circuit for inductive load switching") Min. Typ. Max. Unit - 103 - ns - 0.87 - µC - 19.2 - A - 720 - A/µs Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 211 - µJ trr Reverse recovery time - 280 - ns Qrr Reverse recovery charge - 1.9 - µC Irrm Reverse recovery current - 21.8 - A dIrr/dt Peak rate of fall of reverse recovery current during tb - 450 - A/µs Err Reverse recovery energy - 404 - µJ IF = 8 A, VR = 600 V, VGE = 15 V, TJ = 175 °C, RG = 33 Ω (di/dt = 840 A/µs) (see Figure 29: " Test circuit for inductive load switching") DocID029337 Rev 3 5/17 Electrical characteristics 2.1 STGW8M120DF3, STGWA8M120DF3 Electrical characteristics (curves) Figure 2: Power dissipation vs case temperature Figure 3: Collector current vs case temperature Figure 4: Output characteristics (TJ = 25 °C) Figure 5: Output characteristics (TJ = 175 °C) Figure 6: VCE(sat) vs junction temperature Figure 7: VCE(sat) vs collector current 6/17 DocID029337 Rev 3 STGW8M120DF3, STGWA8M120DF3 Electrical characteristics Figure 8: Collector current vs switching frequency Figure 9: Forward bias safe operating area Figure 10: Transfer characteristics Figure 11: Diode VF vs forward current Figure 12: Normalized VGE(th) vs junction temperature Figure 13: Normalized V(BR)CES vs junction temperature DocID029337 Rev 3 7/17 Electrical characteristics STGW8M120DF3, STGWA8M120DF3 Figure 14: Capacitance variations Figure 15: Gate charge vs gate-emitter voltage Figure 16: Switching energy vs collector current Figure 17: Switching energy vs gate resistance Figure 18: Switching energy vs temperature Figure 19: Switching energy vs collector emitter voltage 8/17 DocID029337 Rev 3 STGW8M120DF3, STGWA8M120DF3 Electrical characteristics Figure 20: Short-circuit time and current vs VGE Figure 21: Switching times vs collector current Figure 22: Switching times vs gate resistance Figure 23: Reverse recovery current vs diode current slope Figure 24: Reverse recovery time vs diode current slope Figure 25: Reverse recovery charge vs diode current slope DocID029337 Rev 3 9/17 Electrical characteristics STGW8M120DF3, STGWA8M120DF3 Figure 26: Reverse recovery energy vs diode current slope Figure 27: Thermal impedance for IGBT Figure 28: Thermal impedance for diode 10/17 DocID029337 Rev 3 STGW8M120DF3, STGWA8M120DF3 3 Test circuits Test circuits Figure 29: Test circuit for inductive load switching C A Figure 30: Gate charge test circuit A L=100 µH G E B B 3.3 µF C G + RG 1000 µF VCC D.U.T E - AM01504v 1 Figure 31: Switching waveform Figure 32: Diode reverse recovery waveform DocID029337 Rev 3 11/17 Package information 4 STGW8M120DF3, STGWA8M120DF3 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. 4.1 TO-247 package information Figure 33: TO-247 package outline 12/17 DocID029337 Rev 3 STGW8M120DF3, STGWA8M120DF3 Package information Table 8: TO-247 package mechanical data mm Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 ØR 4.50 S 5.30 DocID029337 Rev 3 3.65 5.50 5.50 5.70 13/17 Package information 4.2 STGW8M120DF3, STGWA8M120DF3 TO-247 long leads package information Figure 34: TO-247 long leads package outline 14/17 DocID029337 Rev 3 STGW8M120DF3, STGWA8M120DF3 Package information Table 9: TO-247 long leads package mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 P 3.50 3.60 Q 5.60 S 6.05 L1 4.30 DocID029337 Rev 3 3.70 6.00 6.15 6.25 15/17 Revision history 5 STGW8M120DF3, STGWA8M120DF3 Revision history Table 10: Document revision history Date Revision 11-May-2016 1 First release. 2 Datasheet promoted from preliminary to production data. Updated Table 2: "Absolute maximum ratings". Updated Section 2: "Electrical characteristics". Added Section 2.1: "Electrical characteristics (curves)". 3 Updated package silhouette on cover page. Updated Table 4: "Static characteristics" and Table 5: "Dynamic characteristics". Minor text changes 19-Sep-2016 31-Oct-2017 16/17 Changes DocID029337 Rev 3 STGW8M120DF3, STGWA8M120DF3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved DocID029337 Rev 3 17/17