STGWA15M120DF3

STGW15M120DF3 STGWA15M120DF3 Trench gate field-stop IGBT, M series 1200 V, 15 A low loss Datasheet - production data Features • 10 µs of short-circuit withstand time • VCE(sat) = 1.85 V (typ.) @ IC = 15 A • Tight parameters distribution • Safer paralleling • Low thermal resistance    • Soft and fast recovery antiparallel diode Applications 72 72ORQJOHDGV • Industrial drives • UPS • Solar • Welding Figure 1.Internal schematic diagram Description &RU7$% This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation. * ( Table 1. Device summary Order code Marking Package Packaging STGW15M120DF3 G15M120DF3 TO-247 Tube STGWA15M120DF3 G15M120DF3 TO-247 long leads Tube October 2014 This is information on a product in full production. DocID026222 Rev 2 1/19 www.st.com 19 Contents STGW15M120DF3, STGWA15M120DF3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ........................... 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 5 2/19 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 4.1 TO-247, STGW15M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 4.2 TO-247 long leads, STGWA15M120DF3 . . . . . . . . . . . . . . . . . . . . . . . . . 16 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 DocID026222 Rev 2 STGW15M120DF3, STGWA15M120DF3 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0) Value Unit 1200 V IC Continuous collector current at TC = 25 °C 30 A IC Continuous collector current at TC = 100 °C 15 A ICP(1) Pulsed collector current 60 A VGE Gate-emitter voltage ±20 V IF Continuous forward current at TC = 25 °C 30 A IF Continuous forward current at TC = 100 °C 15 A IFP(1) Pulsed forward current 60 A PTOT Total dissipation at TC = 25 °C 259 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature - 55 to 175 °C Value Unit TJ 1. Pulse width limited by maximum junction temperature. Table 3. Thermal data Symbol Parameter RthJC Thermal resistance junction-case IGBT 0.58 °C/W RthJC Thermal resistance junction-case diode 1.3 °C/W RthJA Thermal resistance junction-ambient 50 °C/W DocID026222 Rev 2 3/19 Electrical characteristics 2 STGW15M120DF3, STGWA15M120DF3 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 4. Static characteristics Symbol Parameter Test conditions Collector-emitter V(BR)CES breakdown voltage (VGE = 0) IC = 2 mA Min. VF Unit V 1.85 VGE = 15 V, IC = 15 A, Collector-emitter saturation TJ = 125 °C voltage VGE = 15 V, IC = 15 A TJ = 175 °C Forward on-voltage Max. 1200 VGE = 15 V, IC = 15 A VCE(sat) Typ. 2.3 2.1 V 2.2 IF = 15 A 2.7 IF = 15 A TJ = 125 °C 2.05 V IF = 15 A TJ = 175 °C 1.75 V VGE(th) Gate threshold voltage VCE = VGE, IC = 500 µA ICES Collector cut-off current (VGE = 0) IGES Gate-emitter leakage current (VCE = 0) 5 6 3.8 V 7 V VCE = 1200 V 25 µA VGE = ± 20 V 250 nA Table 5. Dynamic characteristics Symbol 4/19 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 VCC = 960 V, IC =15 A, VGE = 15 V, see Figure 30 Qge Gate-emitter charge Qgc Gate-collector charge DocID026222 Rev 2 Min. Typ. Max. Unit - 985 - pF - 118 - pF - 38 - pF - 53 - nC - 8 - nC - 32 - nC STGW15M120DF3, STGWA15M120DF3 Electrical characteristics Table 6. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Test conditions Min. Typ. Max. Unit Turn-on delay time - 26 - ns Current rise time - 12 - ns - 1000 - A/µs - 122 - ns - 163 - ns Turn-on current slope VCE = 600 V, IC = 15 A, VGE = 15 V, RG= 22 Ω see Figure 29 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 0.55 - mJ Eoff(2) Turn-off switching losses - 0.85 - mJ Total switching losses - 1.4 - mJ Turn-on delay time - 25 - ns Current rise time - 14 - ns Turn-on current slope - 857 - A/µs - 136 - ns - 270 - ns Ets td(on) tr (di/dt)on td(off) tf 1. Parameter VCE = 600 V, IC = 15 A, RG= 22 Ω, VGE = 15 V, TJ = 175 °C, see Figure 29 Turn-off delay time Current fall time Eon(1) Turn-on switching losses - 1.1 - mJ Eoff(2) Turn-off switching losses - 1.13 - mJ Ets Total switching losses - 2.23 - mJ tsc Short-circuit withstand time - µs VCC ≤ 600V, VGE= 15V, TJstart= 150°C 10 Energy losses include reverse recovery of the diode. 2. Turn-off losses include also the tail of the collector current. Table 7. Diode switching characteristics (inductive load) Symbol Parameter Test conditions trr Reverse recovery time Qrr Reverse recovery charge IF = 15 A, VR = 600 V, VGE = 15 V, see Figure 29 di/dt = 1000 A/µs Min. Typ. Max. Unit - 270 - ns - 0.96 - µC - 15 - A - 935 - A/µs Irrm Reverse recovery current dIrr/ /dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy - 0.18 - mJ trr Reverse recovery time - 534 - ns Qrr Reverse recovery charge - 3.45 - µC Irrm Reverse recovery current - 23 - A dIrr/ /dt Peak rate of fall of reverse recovery current during tb - 266 - A/µs Err Reverse recovery energy - 0.55 - mJ IF = 15 A, VR = 600 V, VGE = 15 V, TJ = 175 °C, see Figure 29 di/dt = 1000 A/µs DocID026222 Rev 2 5/19 Electrical characteristics 2.1 STGW15M120DF3, STGWA15M120DF3 Electrical characteristics (curves) Figure 2. Power dissipation vs. case temperature *,3')65 3WRW : Figure 3. Collector current vs. case temperature 9*(•97 -”ƒ&  *,3')65 ,& $ 9*(•97 -”ƒ&               Figure 4. Output characteristics (TJ=25°C) *,3')65 ,& $ 9*( 9   7&ƒ&    7&ƒ&  Figure 5. Output characteristics (TJ=175°C) *,3')65 ,& $ 9*( 9 9   9   9     9        Figure 6. VCE(sat) vs. junction temperature 9&(VDW 9 *,3')65 9*( 9 ,& $  9    9&(9  9 9      9&(9 Figure 7. VCE(sat) vs. collector current *,3')65 9&(VDW 9  7M ƒ& 9*( 9   7M ƒ&   ,& $   ,& $    6/19 7M ƒ&       7&ƒ&   DocID026222 Rev 2      ,&$ STGW15M120DF3, STGWA15M120DF3 Electrical characteristics Figure 8. Collector current vs. switching frequency *,3')65 ,& $ Figure 9. Safe operating area *,3')65 ,& $ 7& ƒ&  —V 7& ƒ&  —V   —V  6LQJOHSXOVH7F ƒ& 7Mƒ&9*( 9 5HFWDQJXODUFXUUHQWVKDSH GXW\F\FOH 9FF 95J ȍ 9JH 97M  ƒ&     IN+]  Figure 10. Transfer characteristics    9&(9 Figure 11. Diode VF vs forward current *,3')65 ,& $ PV *,3')65 9) 9 7M ƒ& 7M ƒ&     7M ƒ&   9&( 9 7M ƒ&       7M ƒ&     Figure 12. Normalized VGE(th) vs junction temperature *,3')65 9*(WK QRUP 9&( 9*( ,& —$    9*(9      ,&$ ,& P$     *,3')65 9%5&(6 QRUP     Figure 13. Normalized V(BR)CES vs. junction temperature      7&ƒ&   DocID026222 Rev 2     7&ƒ& 7/19 Electrical characteristics STGW15M120DF3, STGWA15M120DF3 Figure 14. Capacitance variations Figure 15. Gate charge vs. gate-emitter voltage *,3')65 &S) 9&& 9 ,& $ ,* P$  &LHV  *,3')65 9*(9   &RHV   I 0+]  &UHV      Figure 16. Switching loss vs. collector current *,3')65 (P-    9&(9 9&& 9 9*( 9 5J ȍ 7M ƒ&     4JQ&  Figure 17. Switching loss vs. gate resistance *,3')65 (P- 9&& 9 9*( 9 ,& $ 7M ƒ&  (RQ (RQ   (RII   (RII             ,&$ Figure 18. Switching loss vs. junction temperature *,3')65 (P-        5Jȍ  Figure 19. Switching loss vs. collector emitter voltage *,3')65 (P- 9&& 9 9*( 9 ,& $ 5J ȍ 9*( 9 7M ƒ& ,& $ 5J ȍ (RQ    (RQ (RII  (RII        8/19    7-ƒ&   DocID026222 Rev 2    9&(9 STGW15M120DF3, STGWA15M120DF3 Electrical characteristics Figure 20. Short-circuit time and current vs. VGE Figure 21. Switching times vs. collector current *,3')65 ,VF$ WVF—V 9&&”9 7-”ƒ& *,3')65 WQV 9&& 9 9*( 9 7M ƒ& 5J ȍ ,VF  WI   WVF  WGRII WGRQ     WU         Figure 22. Switching times vs. gate resistance *,3')65 WQV    9*(9 WI      ,&$ Figure 23.Reverse recovery current vs. diode current slope ,UUP $    *,3')65 9&& 9 9*( 9 7M ƒ& ,) $ WGRII  WGRQ   WU  9&& 9 9*( 9 7M ƒ& ,& $        5Jȍ Figure 24. Reverse recovery time vs. diode current slope *,3')65 WUU QV      GLGW$—V Figure 25.Reverse recovery charge vs. diode current slope *,3')65 4UU —&           9&& 9 9*( 9 7M ƒ& ,) $   9&& 9 9*( 9 7M ƒ& ,) $  GLGW$—V   DocID026222 Rev 2    GLGW$—V 9/19 Electrical characteristics STGW15M120DF3, STGWA15M120DF3 Figure 26. Reverse recovery energy vs. diode current slope *,3')65 (UU P-        10/19 9&& 9 9*( 9 7M ƒ& ,) $    GLGW$—V DocID026222 Rev 2 STGW15M120DF3, STGWA15M120DF3 Electrical characteristics Figure 27.Thermal impedance for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 Zth=k Rthj-c δ=tp/t 0.01 Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 10 -1 10 tp (s) Figure 28.Thermal impedance for diode DocID026222 Rev 2 11/19 Test circuits 3 STGW15M120DF3, STGWA15M120DF3 Test circuits Figure 29. Test circuit for inductive load switching Figure 30. Gate charge test k k k k k k AM01504v1 Figure 31. Switching waveform AM01505v1 Figure 32. Diode reverse recovery waveform 90% VG IF trr 90% VCE Qrr di/dt 10% ts tf 10% Tr(Voff) Tcross 10% IRRM 90% t IRRM IC 10% Td(off) Td(on) Tr(Ion) Ton VRRM Tf Toff dv/dt AM01506v1 12/19 DocID026222 Rev 2 AM01507v1 STGW15M120DF3, STGWA15M120DF3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID026222 Rev 2 13/19 Package mechanical data 4.1 STGW15M120DF3, STGWA15M120DF3 TO-247, STGW15M120DF3 Figure 33. TO-247 drawing 0075325_H 14/19 DocID026222 Rev 2 STGW15M120DF3, STGWA15M120DF3 Package mechanical data Table 8. TO-247 mechanical data mm. Dim. Min. Typ. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 5.50 DocID026222 Rev 2 5.70 15/19 Package mechanical data 4.2 STGW15M120DF3, STGWA15M120DF3 TO-247 long leads, STGWA15M120DF3 Figure 34. TO-247 long leads drawing 8463846_A_F 16/19 DocID026222 Rev 2 STGW15M120DF3, STGWA15M120DF3 Package mechanical data Table 9. TO-247 long leads mechanical data mm Dim. Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 4.30 P 3.50 Q 5.60 S 6.05 3.60 3.70 6.00 6.15 DocID026222 Rev 2 6.25 17/19 Revision history 5 STGW15M120DF3, STGWA15M120DF3 Revision history Table 10. Document revision history Date Revision 22-Apr-2014 1 Initial release. 2 Document status promoted from preliminary to production data. Updated all the document accordingly. Added Section 2.1: Electrical characteristics (curves). Updated Section 4: Package mechanical data. 31-Oct-2014 18/19 Changes DocID026222 Rev 2 STGW15M120DF3, STGWA15M120DF3 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID026222 Rev 2 19/19