STGWA15H120DF2

STGW15H120DF2, STGWA15H120DF2 Datasheet Trench gate field-stop IGBT, H series 1200 V, 15 A high speed Features 1 TO-247 2 3 1 2 3 TO-247 long leads • Maximum junction temperature: TJ = 175 °C • • • High speed switching series Minimized tail current VCE(sat) = 2.1 V @ IC = 15 A • 5 μs minimum short circuit withstand time at TJ = 150 °C • • • Safe paralleling Low thermal resistance Very fast recovery antiparallel diode Applications • • • • • Photovoltaic inverters Uninterruptible power supply Welding Power factor correction High frequency converters Description This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the H series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of high-switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation. Product status links STGW15H120DF2 STGWA15H120DF2 Product summary Order code STGW15H120DF2 Marking G15H120DF2 Package TO-247 Packing Tube Order code STGWA15H120DF2 Marking G15H120DF2 Package TO-247 long leads Packing Tube DS9296 - Rev 6 - April 2021 For further information contact your local STMicroelectronics sales office. www.st.com STGW15H120DF2, STGWA15H120DF2 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol VCES Parameter Collector-emitter voltage (VGE = 0 V) Value Unit 1200 V Continuous collector current at TC = 25 °C 30 Continuous collector current at TC = 100 °C 15 Pulsed collector current 60 Gate-emitter voltage ±20 Transient gate-emitter voltage (tp ≤ 10 μs, D ≤ 0.01) ±30 Continuous forward current at TC = 25 °C 30 Continuous forward current at TC = 100 °C 15 IFP(1) Pulsed forward current 60 A PTOT Total power dissipation at TC = 25 °C 259 W TSTG Storage temperature range - 55 to 150 °C Operating junction temperature range - 55 to 175 °C Value Unit IC ICP(1) VGE IF TJ A A V A 1. Pulse width limited by maximum junction temperature. Table 2. Thermal data Symbol RthJC RthJA DS9296 - Rev 6 Parameter Thermal resistance, junction-to-case IGBT 0.58 Thermal resistance, junction-to-case diode 1.47 Thermal resistance, junction-to-ambient 50 °C/W °C/W page 2/17 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified. Table 3. Static characteristics Symbol Parameter Test conditions V(BR)CES Collector-emitter breakdown voltage VCE(sat) Collector-emitter saturation voltage VF Forward on-voltage VGE = 0 V, IC = 2 mA Min. Typ. 1200 2.1 VGE = 15 V, IC = 15 A, TJ = 125 °C 2.4 VGE = 15 V, IC = 15 A, TJ = 175 °C 2.5 IF = 25 A 3.5 IF = 25 A, TJ = 125 °C 2.6 IF = 25 A, TJ = 175 °C 2.2 Gate threshold voltage VCE = VGE, IC = 500 μA ICES Collector cut-off current IGES Gate-emitter leakage current 5 Unit V VGE = 15 V, IC = 15 A VGE(th) Max. 6 2.6 V 4.4 V 7 V VGE = 0 V, VCE = 1200 V 25 µA VCE = 0 V, VGE = ±20 V 250 nA Table 4. Dynamic characteristics Symbol DS9296 - Rev 6 Parameter Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Qg Total gate charge Qge Gate-emitter charge Qgc Gate-collector charge Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V VCC = 960 V, IC = 15 A, VGE = 15 V (see Figure 28. Gate charge test circuit) Min. Typ. Max. Unit - 1300 - pF - 105 - pF - 32 - pF - 67 - nC - 8 - nC - 38 - nC page 3/17 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Unit Turn-on delay time 23 - ns Current rise time 7.4 - ns 1621 - A/μs 111 - ns 111 - ns 0.38 - mJ Turn-on current slope Turn-off delay time Current fall time Test conditions Min. VCE = 600 V, IC = 15 A, RG = 10 Ω, VGE = 15 V (see Figure 27. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff(2) Turn-off switching energy 0.37 - mJ Total switching energy 0.75 - mJ Turn-on delay time 23.5 - ns 8 - ns 1525 - A/μs 118 - ns 253 - ns 0.65 - mJ Eon Ets td(on) tr (di/dt)on td(off) tf Current rise time Turn-on current slope Turn-off delay time Current fall time VCE = 600 V, IC = 15 A, RG = 10 Ω, VGE = 15 V, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) Eon(1) Turn-on switching energy Eoff(2) Turn-off switching energy 0.93 - mJ Ets Total switching energy 1.58 - mJ tsc Short-circuit withstand time - μs VCE = 600 V, VGE = 15 V, TJ = 150 °C 5 1. Including the reverse recovery of the diode. 2. Including the tail of the collector current. Table 6. Diode switching characteristics (inductive load) Symbol DS9296 - Rev 6 Parameter Test conditions Min. Typ. Max. Unit - 231 - ns trr Reverse recovery time Qrr Reverse recovery charge IF = 15 A, VR = 600 V, - 0.72 - μC Irrm Reverse recovery current di/dt = 1000 A/μs, VGE = 15 V - 14.5 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 27. Test circuit for inductive load switching) - 1200 - A/μs Err Reverse recovery energy - 0.4 - mJ trr Reverse recovery time - 414 - ns - 2.2 - μC - 21.5 A - 632 A/μs - 1.3 mJ Qrr Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 15 A, VR = 600 V, di/dt = 1000 A/μs, VGE = 15 V, TJ = 175 °C (see Figure 27. Test circuit for inductive load switching) page 4/17 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature Ptot (W) GIPG020420141417FSR VGE ≥ 15V, T J ≤ 175 °C Figure 2. Collector current vs case temperature IC (A) GIPG020420141427FSR VGE ≥ 15V, T J ≤ 175 °C 30 250 25 200 20 150 15 100 10 50 0 0 5 25 50 75 100 125 150 175 TC(°C) Figure 3. Output characteristics (TJ = 25 °C) IC (A) GIPG020420141432FSR 11V VGE=15V 50 0 0 25 75 100 125 150 175 TC(°C) Figure 4. Output characteristics (TJ = 175 °C) IC (A) GIPG020420141437FSR VGE=15V 13V 50 13V 40 40 30 9V 20 10 10 1 2 3 4 7V 5 VCE(V) Figure 5. VCE(sat) vs junction temperature GIPG020420141445FSR VCE(sat) (V) 3.4 IC= 30A VGE= 15V 11V 30 20 0 0 50 9V 7V 0 0 1 2 3 4 5 VCE(V) Figure 6. VCE(sat) vs collector current VCE(sat) (V) 4.8 GIPG020420141455FSR TJ= 175°C VGE= 15V 4.4 3.0 4.0 IC= 15A 2.6 3.6 TJ= 25°C 3.2 2.8 2.2 IC= 7.5A 1.8 2.4 TJ= -40°C 2.0 1.6 1.4 -50 DS9296 - Rev 6 0 50 100 150 TJ(°C) 1.2 0 10 20 30 40 50 IC(A) page 5/17 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency GIPG020420141510FSR Ic [A] 50 Figure 8. Safe operating area GIPG020420141503FSR IC (A) Tc=80°C 100 40 1 µs Tc=100 °C 10 30 10 µs 100 µs 20 0 1 Rectangular current shape, (duty cycle=0.5, VCC = 600V, RG=10 Ω, VGE = 0/15 V, TJ =175°C) 10 1 f [kHz] 10 Figure 9. Transfer characteristics IC (A) 55 Single pulse Tc = 25°C, T J ≤ 175°C VGE= 15V GIPG030420140948FSR VCE=10V 0.1 1 10 100 TJ=25°C 30 IC= 500µA VCE= VGE 1.0 TJ=175°C 0.9 0.8 15 10 0.7 5 6 7 8 9 10 11 VGE(V) 0.6 -50 Figure 11. Normalized V(BR)CES vs junction temperature GIPG030420141002FSR V(BR)CES (norm) 1.1 VCE(V) GIPG030420140959FSR VGE(th) (norm) 1.1 25 20 5 0 1000 Figure 10. Normalized VGE(th) vs junction temperature 50 45 40 35 1 ms IC= 2mA 0 50 100 150 TJ(°C) Figure 12. Capacitance variations C (pF) GIPG030420141004FSR Cies 1000 100 1.0 Coes 10 Cres f = 1 MHz, VGE = 0 0.9 -50 DS9296 - Rev 6 0 50 100 150 TJ(°C) 1 0.1 1 10 100 VCE(V) page 6/17 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics (curves) Figure 13. Gate charge vs gate-emitter voltage VGE (V) GIPG030420141014FSR IC= 15A IGE= 1mA VCC= 960V 16 Figure 14. Switching energy vs collector current GIPG030420141105FSR E (µJ) 1600 VCC = 600V, V GE = 15V, RG = 10Ω, TJ = 175°C 1200 EOFF 12 400 4 0 EON 800 8 0 60 40 20 Qg(nC) Figure 15. Switching energy vs gate resistance E (µJ) 1000 GIPG030420141139FSR VCC = 600 V, V GE = 15 V, IC = 15 A, TJ = 175 °C 0 0 5 10 15 20 30 25 IC(A) Figure 16. Switching energy vs junction temperature GIPG030420141147FSR E (µJ) VCC= 600V, V GE= 15V, RG= 10Ω, IC= 15A 900 EOFF EOFF 800 700 600 500 EON 400 0 EON 10 20 30 40 RG(Ω) Figure 17. Switching energy vs collector-emitter voltage E (µJ) GIPG030420141156FSR TJ= 175°C, VGE= 15V, RG= 10Ω, IC= 15A 300 0 50 100 150 TJ(°C) Figure 18. Switching times vs gate resistance GIPG030420141201FSR t (ns) TJ= 175°C, VGE= 15V, IC= 15A, VCC= 600V tf 1500 100 tdoff tdon 1000 EOFF tr 10 500 EON 0 200 DS9296 - Rev 6 400 600 800 VCE(V) 1 0 10 20 30 40 RG(Ω) page 7/17 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics (curves) Figure 19. Switching times vs collector current GIPG030420141211FSR t (ns) TJ= 175°C, VGE= 15V, RG= 10Ω, VCC= 600V Figure 20. Diode VF vs forward current GIPG030420141413FSR VF (V) TJ= -40°C 7.0 tf 6.0 100 tdoff 5.0 tdon TJ= 25°C 4.0 10 3.0 2.0 tr 1 0 10 20 30 IC(A) Figure 21. Reverse recovery current vs diode current slope Irm (A) TJ= 175°C GIPG030420141434FSR IF = 15A, VCC = 600V TJ=175°C, VGE = 15V 1.0 0 10 20 30 40 50 IF(A) Figure 22. Reverse recovery time vs diode current slope GIPG030420141444FSR trr (ns) IF = 15A, VCC = 600V TJ=175°C, VGE = 15V 650 35 450 25 250 15 5 300 700 1100 1500 di/dt(A/µs) Figure 23. Reverse recovery charge vs diode current slope GIPG030420141453FSR Qrr (nC) IF = 15A, VCC = 600V TJ=175°C, VGE = 15V 50 300 700 1100 1500 di/dt(A/µs) Figure 24. Reverse recovery energy vs diode current slope GIPG030420141508FSR Err (µJ) IF = 15A, VCC = 600V TJ=175°C, VGE = 15V 1800 2300 1400 2100 1000 1900 1700 300 DS9296 - Rev 6 700 1100 1500 di/dt(A/µs) 600 300 700 1100 1500 di/dt(A/µs) page 8/17 STGW15H120DF2, STGWA15H120DF2 Electrical characteristics (curves) Figure 25. Thermal impedence for IGBT ZthTO2T_B K δ=0.5 0.2 0.1 0.05 -1 10 0.02 0.01 Zth = k*RthJC δ = tp/t Single pulse tp t -2 10 -5 10 -4 10 -3 10 -2 -1 10 10 tp (s) Figure 26. Thermal impedance for diode Zth = k*RthJC δ = tp/t tp t DS9296 - Rev 6 page 9/17 STGW15H120DF2, STGWA15H120DF2 Test circuits 3 Test circuits Figure 27. Test circuit for inductive load switching C A Figure 28. Gate charge test circuit A k L=100 µH G E B B 3.3 µF C G + k RG 1000 µF VCC k D.U.T k E k k AM01505v1 AM01504v1 Figure 29. Switching waveform Figure 30. Diode reverse recovery waveform 90% 10% VG 90% VCE 10% tr(Voff) tcross 25 90% IC td(on) ton td(off) tr(Ion) 10% tf toff AM01506v1 DS9296 - Rev 6 page 10/17 STGW15H120DF2, STGWA15H120DF2 Package information 4 Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. 4.1 TO-247 package information Figure 31. TO-247 package outline aaa 0075325_10 DS9296 - Rev 6 page 11/17 STGW15H120DF2, STGWA15H120DF2 TO-247 package information Table 7. TO-247 package mechanical data Dim. mm Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 5.45 5.60 18.50 ØP 3.55 3.65 ØR 4.50 5.50 S 5.30 aaa DS9296 - Rev 6 Typ. 5.50 5.70 0.04 0.10 page 12/17 STGW15H120DF2, STGWA15H120DF2 TO-247 long leads package information 4.2 TO-247 long leads package information Figure 32. TO-247 long leads package outline 8463846_3 DS9296 - Rev 6 page 13/17 STGW15H120DF2, STGWA15H120DF2 TO-247 long leads package information Table 8. TO-247 long leads package mechanical data Dim. mm Min. Typ. Max. A 4.90 5.00 5.10 A1 2.31 2.41 2.51 A2 1.90 2.00 2.10 b 1.16 1.26 b2 3.25 b3 2.25 c 0.59 0.66 D 20.90 21.00 21.10 E 15.70 15.80 15.90 E2 4.90 5.00 5.10 E3 2.40 2.50 2.60 e 5.34 5.44 5.54 L 19.80 19.92 20.10 L1 P 3.50 Q 5.60 S 6.05 aaa DS9296 - Rev 6 4.30 3.60 3.70 6.00 6.15 6.25 0.04 0.10 page 14/17 STGW15H120DF2, STGWA15H120DF2 Revision history Table 9. Document revision history Date Revision 03-Oct-2012 1 Changes Initial release. Updated title and features in cover page. 03-Mar-2014 2 Updated Section 4: Package mechanical data. Minor text changes. 08-Apr-2014 3 Added Section 2.1: Electrical characteristics (curves). Minor text changes. Added 4.2: TO-247 long leads, STGWA15H120DF2. 29-Jan-2015 4 Updated Figure 29.: Gate charge test circuit. Updated Figure 30.: Switching waveform and Figure 31.: Diode reverse recovery waveform. Minor text changes. 04-Mar-2015 5 Updated Figure 5.: Output characteristics (TJ = 175 °C) Minor text changes. Updated Table 1. Absolute maximum ratings. 08-Apr-2021 6 Updated Section 4 Package information. Minor text changes. DS9296 - Rev 6 page 15/17 STGW15H120DF2, STGWA15H120DF2 Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 Electrical characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 4 Package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .11 4.1 TO-247 package information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 4.2 TO-247 long leads package information. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 DS9296 - Rev 6 page 16/17 STGW15H120DF2, STGWA15H120DF2 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. 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Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2021 STMicroelectronics – All rights reserved DS9296 - Rev 6 page 17/17