STGWA25M120DF3

STGW25M120DF3 Datasheet Trench gate field-stop, 1200 V, 25 A, low-loss M series IGBT in a TO-247 package Features 2 1 3 TO-247 C(2, TAB) • Maximum junction temperature: TJ = 175 °C • • 10 μs of short-circuit withstand time Low VCE(sat) = 1.85 V (typ.) @ IC = 25 A • • Tight parameter distribution Positive VCE(sat) temperature coefficient • • Low thermal resistance Soft- and fast-recovery antiparallel diode Applications • • • • G(1) Industrial drives UPS Solar Welding Description E(3) NG1E3C2T This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Product status link STGW25M120DF3 Product summary Order code STGW25M120DF3 Marking G25M120DF3 Package TO-247 Packing Tube DS10300 - Rev 4 - November 2019 For further information contact your local STMicroelectronics sales office. www.st.com STGW25M120DF3 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Value Unit 1200 V Continuous collector current at TC = 25 °C 50 A Continuous collector current at TC = 100 °C 25 A Pulsed collector current 100 A Gate-emitter voltage ±20 V Transient gate-emitter voltage ±30 V Continuous forward current at TC = 25 °C 50 A Continuous forward current at TC = 100 °C 25 A IFP Pulsed forward current 100 A PTOT Total power dissipation at TC = 25 °C 375 W TSTG Storage temperature range -55 to 150 °C Operating junction temperature range -55 to 175 °C Value Unit Thermal resistance junction-case IGBT 0.4 °C/W Thermal resistance junction-case diode 0.96 °C/W 50 °C/W VCES IC (1) ICP VGE IF (1) TJ Parameter Collector-emitter voltage (VGE = 0 V) 1. Pulse width is limited by maximum junction temperature. Table 2. Thermal data Symbol RthJC RthJA DS10300 - Rev 4 Parameter Thermal resistance junction-ambient page 2/16 STGW25M120DF3 Electrical characteristics 2 Electrical characteristics TJ = 25 °C unless otherwise specified Table 3. Static characteristics Symbol V(BR)CES Parameter Test conditions Collector-emitter breakdown voltage VGE = 0 V, IC = 2 mA Min. VGE = 15 V, IC = 25 A, Forward on-voltage IF = 25 A 2.95 IF = 25 A, TJ = 125 °C 2.25 IF = 25 A, TJ = 175 °C 1.9 VGE(th) Gate threshold voltage VCE = VGE, IC = 1 mA ICES Collector cut-off current IGES Gate-emitter leakage current V 2.2 TJ = 175 °C VF 2.3 2.1 TJ = 125 °C Unit V 1.85 VGE = 15 V, IC = 25 A, VCE(sat) Max. 1200 VGE = 15 V, IC = 25 A Collector-emitter saturation voltage Typ. 5 6 4.1 V 7 V VGE = 0 V, VCE = 1200 V 25 µA VCE = 0 V, VGE = ±20 V ±250 nA Unit Table 4. Dynamic characteristics Symbol Cies Input capacitance Coes Output capacitance Cres Reverse transfer capacitance Test conditions VCE = 25 V, f = 1 MHz, VGE = 0 V Min. Typ. Max. - 1550 - - 180 - - 65 - Qg Total gate charge VCC = 960 V, IC = 25 A, - 85 - Qge Gate-emitter charge VGE = 0 to 15 V - 11.5 - Gate-collector charge (see Figure 29. Gate charge test circuit) - 45.5 - Qgc DS10300 - Rev 4 Parameter pF nC page 3/16 STGW25M120DF3 Electrical characteristics Table 5. IGBT switching characteristics (inductive load) Symbol td(on) tr (di/dt)on td(off) tf Parameter Typ. Max. Unit Turn-on delay time 28 - ns Current rise time 15 - ns 1370 - A/µs 150 - ns 155 - ns 0.85 - mJ Turn-on current slope Turn-off delay time Current fall time Test conditions Min. VCE = 600 V, IC = 25 A, VGE = 15 V, RG = 15 Ω (see Figure 28. Test circuit for inductive load switching) (1) Turn-on switching energy Eoff(2) Turn-off switching energy 1.3 - mJ Total switching energy 2.15 - mJ Turn-on delay time 28 - ns Current rise time 17 - ns Eon Ets td(on) tr Turn-on current slope VCE = 600 V, IC = 25 A, 1270 - A/µs Turn-off delay time VGE = 15 V, RG = 15 Ω, 155 - ns Current fall time TJ = 175 °C 240 - ns Eon(1) Turn-on switching energy (see Figure 28. Test circuit for inductive load switching) 1.6 - mJ (2) Turn-off switching energy 1.9 - mJ Ets Total switching energy 3.5 - mJ tsc Short-circuit withstand time - µs (di/dt)on td(off) tf Eoff VCC ≤ 600 V, VGE = 15 V, TJstart ≤ 150 °C 10 1. Including the reverse recovery of the diode 2. Including the tail of the collector current Table 6. Diode switching characteristics (inductive load) Symbol Test conditions Min. Typ. Max. Unit - 265 - ns trr Reverse recovery time Qrr Reverse recovery charge IF = 25 A, VR = 600 V, - 1.2 - µC Irrm Reverse recovery current VGE = 15 V, di/dt = 1000 A/µs - 19 - A dIrr/dt Peak rate of fall of reverse recovery current during tb (see Figure 28. Test circuit for inductive load switching) - 1090 - A/µs Err Reverse recovery energy - 0.22 - mJ trr Reverse recovery time - 585 - ns - 5 - µC - 30 - A - 270 - A/µs - 0.75 - mJ Qrr DS10300 - Rev 4 Parameter Reverse recovery charge Irrm Reverse recovery current dIrr/dt Peak rate of fall of reverse recovery current during tb Err Reverse recovery energy IF = 25 A, VR = 600 V, VGE = 15 V, TJ = 175 °C, di/dt = 1000 A/µs (see Figure 28. Test circuit for inductive load switching) page 4/16 STGW25M120DF3 Electrical characteristics (curves) 2.1 Electrical characteristics (curves) Figure 1. Power dissipation vs case temperature GIPD301020140906FSR Ptot (W) VGE ≥ 15 V, T J ≤ 175 °C 320 Figure 2. Collector current vs case temperature GIPD301020140909FSR IC (A) VGE ≥ 15 V, T J ≤ 175 °C 50 40 240 30 160 20 80 10 0 0 100 50 TC(°C) 150 Figure 3. Output characteristics (TJ = 25 °C) GIPD301020140913FSR IC (A) 0 0 100 50 Figure 4. Output characteristics (TJ = 175 °C) GIPD301020140919FSR IC (A) VGE=15V 13V VGE=15V TC(°C) 150 13V 80 80 11V 11V 60 60 40 9V 40 9V 20 20 7V 0 0 7V 1 2 3 4 VCE(V) 5 Figure 5. VCE(sat) vs junction temperature VCE(sat) (V) GIPD301020140924FSR VGE=15V IC=50A 3.2 0 0 1 2 3 4 VCE(V) Figure 6. VCE(sat) vs collector current GIPD301020141133FSR VCE(sat) (V) 3.2 Tj=175°C VGE=15V 2.8 2.8 5 Tj=25°C 2.4 2.4 IC=25A 2.0 2.0 IC=12.5A 1.6 1.2 -50 DS10300 - Rev 4 Tj=-40°C 1.6 1.2 0 50 100 150 TC(°C) 0.8 0 10 20 30 40 IC(A) page 5/16 STGW25M120DF3 Electrical characteristics (curves) Figure 7. Collector current vs switching frequency GIPD301020141144FSR IC (A) Figure 8. Safe operating area GIPD301020141151FSR IC (A) TC=80°C 60 TC=100°C 100 1µs 40 10µs 10 20 Rectangular current shape, (duty cycle=0.5, Vcc= 600V Rg=15Ω, Vge=0/15V, Tj=175 °C) 0 1 Single pulse, Tc=25°C Tj