STH275N8F7-2AG

STH275N8F7-2AG, STH275N8F7-6AG Automotive-grade N-channel 80 V, 1.7 mΩ typ., 180 A, STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 Datasheet - production data Features Order code STH275N8F7-2AG STH275N8F7-6AG      Figure 1: Internal schematic diagram VDS RDS(on) max. ID 80 V 2.1 mΩ 180 A AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Applications  Switching applications Description These N-channel Power MOSFETs utilize STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code STH275N8F7-2AG STH275N8F7-6AG January 2017 Marking 275N8F7 DocID027223 Rev 4 This is information on a product in full production. Package H²PAK-2 H²PAK-6 Packing Tape and reel 1/18 www.st.com Contents STH275N8F7-2AG, STH275N8F7-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/18 4.1 H²PAK-2 package information ......................................................... 10 4.2 H²PAK-6 package information ......................................................... 12 4.3 H²PAK packing information ............................................................. 15 Revision history ............................................................................ 17 DocID027223 Rev 4 STH275N8F7-2AG, STH275N8F7-6AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 80 V VGS Gate-source voltage ±20 V Drain current (continuous) at TC = 25 °C 180 Drain current (continuous) at TC = 100 °C 180 IDM(2) Drain current (pulsed) 720 A PTOT Total dissipation at TC = 25 °C 315 W EAS(3) Single pulse avalanche energy 0.775 J -55 to 175 °C ID(1) Tstg Storage temperature range Tj Operating junction temperature range A Notes: (1) Limited by package. (2) Pulse width is limited by safe operating area. (3) Starting Tj = 25 °C, Id = 65 A, Vdd = 50 V, Tj < Tj-max. Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.48 Thermal resistance junction-pcb 35 Rthj-pcb (1) Value Unit °C/W Notes: (1) When mounted on FR-4 board of 1 inch2, 2oz Cu. DocID027223 Rev 4 3/18 Electrical characteristics 2 STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4: On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 1 mA Typ. Max. 80 Unit V VGS = 0 V, VDS = 80 V 1 VGS = 0 V, VDS = 80 V, TC = 125 °C (1) 100 Gate-body leakage current VDS = 0 V, VGS = +20 V 100 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 90 A 2.1 mΩ Unit IDSS Zero gate voltage drain current IGSS 2.5 1.7 µA Notes: (1) Defined by design, not subject to production test. Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VDS = 50 V, f = 1 MHz, VGS = 0 V VDD = 40 V, ID = 180 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") Min. Typ. Max. - 13600 - - 2050 - - 236 - - 193 - - 96 - - 46 - Min. Typ. Max. - 56 - - 180 - - 98 - - 42 - pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/18 Parameter Turn-on delay time Rise time Turn-off delay time Fall time Test conditions VDD = 40 V, ID = 90 A RG = 4.7 Ω, VGS = 10 V (see Figure 18: "Switching time waveform") DocID027223 Rev 4 Unit ns STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics Table 7: Source-drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD Source-drain current - 180 A ISDM(1) Source-drain current (pulsed) - 720 A VSD(2) Forward on voltage - 1.2 V trr VGS = 0 V, ISD = 90 A Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 180 A, di/dt = 100 A/µs, VDD = 64 V, Tj = 150 °C - 78 ns - 182 nC - 4.7 A Notes: (1) Pulse width limited by safe operating area. (2) Pulsed: pulse duration = 300 µs, duty cycle 1.5 %. DocID027223 Rev 4 5/18 Electrical characteristics 2.1 STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Gate charge vs gate-source voltage Figure 5: Output characteristics Figure 6: Transfer characteristics Figure 7: Normalized V(BR)DSS vs temperature 6/18 DocID027223 Rev 4 STH275N8F7-2AG, STH275N8F7-6AG Electrical characteristics Figure 8: Static drain-source on-resistance Figure 9: Capacitance variations Figure 10: Source-drain diode forward characteristics Figure 11: Normalized gate threshold voltage vs temperature Figure 12: Normalized on-resistance vs temperature DocID027223 Rev 4 7/18 Test circuits 3 8/18 STH275N8F7-2AG, STH275N8F7-6AG Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform Figure 18: Switching time waveform DocID027223 Rev 4 STH275N8F7-2AG, STH275N8F7-6AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK ® specifications, grade definitions and product status are available at: www.st.com. ECOPACK® is an ST trademark. DocID027223 Rev 4 9/18 Package information 4.1 STH275N8F7-2AG, STH275N8F7-6AG H²PAK-2 package information Figure 19: H²PAK-2 package outline 10/18 DocID027223 Rev 4 STH275N8F7-2AG, STH275N8F7-6AG Package information Table 8: H²PAK-2 package mechanical data mm Dim. Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 L 15.30 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 - 7.80 15.80 M 2.6 2.9 R 0.20 0.60 V 0° 8° Figure 20: H²PAK-2 recommended footprint DocID027223 Rev 4 11/18 Package information 4.2 STH275N8F7-2AG, STH275N8F7-6AG H²PAK-6 package information Figure 21: H²PAK-6 package outline 8159693_Rev_8 12/18 DocID027223 Rev 4 STH275N8F7-2AG, STH275N8F7-6AG Package information Table 9: H²PAK-6 package mechanical data mm Dim. Min. Typ. Max. A 4.30 4.70 A1 0.03 0.20 C 1.17 1.37 e 2.34 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 2.54 2.74 H 10.00 10.40 H1 7.40 7.80 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.50 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8° DocID027223 Rev 4 13/18 Package information STH275N8F7-2AG, STH275N8F7-6AG Figure 22: H²PAK-6 recommended footprint footprint_Rev_8 Dimensions are in mm. 14/18 DocID027223 Rev 4 STH275N8F7-2AG, STH275N8F7-6AG 4.3 Package information H²PAK packing information Figure 23: Tape outline Figure 24: Reel outline T REE L DIMENS IONS 40 mm min. Acc ess hole At slot location B D C N A Tape slot In core for Full radius G measured At hub Tape start DocID027223 Rev 4 15/18 Package information STH275N8F7-2AG, STH275N8F7-6AG Table 10: Tape and reel mechanical data Tape Reel mm mm Dim. 16/18 Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027223 Rev 4 Min. Max. 330 13.2 26.4 30.4 STH275N8F7-2AG, STH275N8F7-6AG 5 Revision history Revision history Table 11: Document revision history Date Revision 27-Nov-2014 1 First release. 05-Mar-2015 2 Document status promoted from preliminary to production data. Updated title and feature in cover page. 10-Mar-2016 3 Updated Table 4. Minor text changes. 4 Updated title and features in cover page. Updated Table 2: "Absolute maximum ratings" , Table 4: "On/off states" and Table 6: "Switching times". Minor text changes. 10-Jan-2017 Changes DocID027223 Rev 4 17/18 STH275N8F7-2AG, STH275N8F7-6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2017 STMicroelectronics – All rights reserved 18/18 DocID027223 Rev 4