STH410N4F7-6AG

STH410N4F7-2AG, STH410N4F7-6AG Automotive-grade N-channel 40 V, 0.8 mΩ typ., 200 A STripFET™ F7 Power MOSFETs in H²PAK-2 and H²PAK-6 packages Datasheet - production data Features Order code VDS RDS(on) max. ID PTOT 40 V 1.1 mΩ 200 A 365 W STH410N4F7-2AG STH410N4F7-6AG      Designed for automotive applications and AEC-Q101 qualified Among the lowest RDS(on) on the market Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche ruggedness Figure 1: Internal schematic diagram Applications  Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Table 1: Device summary Order code STH410N4F7-2AG STH410N4F7-6AG February 2016 Marking 410N4F7 Package H²PAK-2 H²PAK-6 DocID027734 Rev 4 This is information on a product in full production. Packing Tape And Reel 1/19 www.st.com Contents STH410N4F7-2AG, STH410N4F7-6AG Contents 1 Electrical ratings ............................................................................. 3 2 Electrical characteristics ................................................................ 4 2.1 Electrical characteristics (curves) ...................................................... 6 3 Test circuits ..................................................................................... 8 4 Package information ....................................................................... 9 5 2/19 4.1 H²PAK-2 package information ......................................................... 10 4.2 H²PAK-6 package information ......................................................... 13 4.3 H²PAK packing information ............................................................. 16 Revision history ............................................................................ 18 DocID027734 Rev 4 STH410N4F7-2AG, STH410N4F7-6AG 1 Electrical ratings Electrical ratings Table 2: Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 40 V VGS Gate-source voltage ±20 V Drain current (continuous) at Tcase = 25 °C 200 Drain current (continuous) at Tcase = 100 °C 200 IDM Drain current (pulsed) 800 A PTOT Total dissipation at Tcase = 25 °C 365 W (3) EAS Single pulse avalanche energy 1.9 J -55 to 175 °C (1) ID (2) Tstg Storage temperature range Tj Operating junction temperature range A Notes: (1) (2) (3) Current is limited by package, the current capability of the silicon is 420 A at 25 °C. Pulse width is limited by safe operating area. Tj ≤ 175 °C, Iav=80A Table 3: Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case 0.41 Thermal resistance junction-pcb 35 Rthj-pcb (1) Value Unit °C/W Notes: (1) When mounted on a 1-inch² FR-4 board, 2oz Cu. DocID027734 Rev 4 3/19 Electrical characteristics 2 STH410N4F7-2AG, STH410N4F7-6AG Electrical characteristics (Tcase = 25 °C unless otherwise specified) Table 4: Static Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage Min. VGS = 0 V, ID = 250 µA Typ. Max. 40 Unit V VGS = 0 V, VDS = 40 V 10 VGS = 0 V, VDS = 40 V, Tcase = 125 °C 100 Gate-body leakage current VDS = 0 V, VGS = 20 V 200 nA VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 4.5 V RDS(on) Static drain-source on-resistance VGS = 10 V, ID = 90 A 1.1 mΩ Unit IDSS Zero gate voltage drain current IGSS 2.5 0.8 µA Table 5: Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions Min. Typ. Max. - 11500 - - 3500 - - 390 - - 141 - - 65 - - 27 - Test conditions Min. Typ. Max. VDD = 20 V, ID = 90 A RG = 4.7 Ω, VGS = 10 V (see Figure 13: "Test circuit for resistive load switching times" and Figure 18: "Switching time waveform") - 35 - - 198 - - 108 - - 44.2 - VDS = 25 V, f = 1 MHz, VGS = 0 V VDD = 20 V, ID = 180 A, VGS = 10 V (see Figure 14: "Test circuit for gate charge behavior") pF nC Table 6: Switching times Symbol td(on) tr td(off) tf 4/19 Parameter Turn-on delay time Rise time Turn-off delay time Fall time DocID027734 Rev 4 Unit ns STH410N4F7-2AG, STH410N4F7-6AG Electrical characteristics Table 7: Source-drain diode Symbol (1) ISD (2) VSD Parameter Test conditions Source-drain current Min. Typ. Max. Unit - 200 A 1.3 V Forward on voltage VGS = 0 V, ISD = 90 A - trr Reverse recovery time - 74.4 ns Qrr Reverse recovery charge - 115 nC IRRM Reverse recovery current ISD = 180 A, di/dt = 100 A/µs, VDD = 32 V, Tj = 25 °C (see Figure 15: "Test circuit for inductive load switching and diode recovery times") - 3.1 A Notes: (1) (2) Limited by package, 420 A current allowed by silicon. Pulse test: pulse duration = 300 µs, duty cycle 1.5%. DocID027734 Rev 4 5/19 Electrical characteristics 2.2 6/19 STH410N4F7-2AG, STH410N4F7-6AG Electrical characteristics (curves) Figure 2: Safe operating area Figure 3: Thermal impedance Figure 4: Output characteristics Figure 5: Transfer characteristics Figure 6: Gate charge vs gate-source voltage Figure 7: Static drain-source on-resistance DocID027734 Rev 4 STH410N4F7-2AG, STH410N4F7-6AG Electrical characteristics Figure 8: Capacitance variations Figure 9: Normalized gate threshold voltage vs temperature Figure 10: Normalized on-resistance vs temperature Figure 11: Normalized V(BR)DSS vs temperature Figure 12: Source-drain diode forward characteristics DocID027734 Rev 4 7/19 Test circuits 3 STH410N4F7-2AG, STH410N4F7-6AG Test circuits Figure 13: Test circuit for resistive load switching times Figure 14: Test circuit for gate charge behavior Figure 15: Test circuit for inductive load switching and diode recovery times Figure 16: Unclamped inductive load test circuit Figure 17: Unclamped inductive waveform 8/19 DocID027734 Rev 4 Figure 18: Switching time waveform STH410N4F7-2AG, STH410N4F7-6AG 4 Package information Package information In order to meet environmental requirements, ST offers these devices in different grades of ® ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ® ECOPACK is an ST trademark. DocID027734 Rev 4 9/19 Package information 4.1 STH410N4F7-2AG, STH410N4F7-6AG H²PAK-2 package information Figure 19: H²PAK-2 package outline 8159712_D 10/19 DocID027734 Rev 4 STH410N4F7-2AG, STH410N4F7-6AG Package information Table 8: H²PAK-2 package mechanical data mm Dim. Min. Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 4.98 5.18 E 0.50 0.90 F 0.78 0.85 H 10.00 10.40 H1 7.40 L 15.30 L1 1.27 1.40 L2 4.93 5.23 L3 6.85 7.25 L4 1.5 1.7 - 7.80 15.80 M 2.6 2.9 R 0.20 0.60 V 0° 8° DocID027734 Rev 4 11/19 Package information STH410N4F7-2AG, STH410N4F7-6AG Figure 20: H²PAK-2 recommended footprint 8159712_D 12/19 DocID027734 Rev 4 STH410N4F7-2AG, STH410N4F7-6AG 4.2 Package information H²PAK-6 package information Figure 21: H²PAK-6 package outline DocID027734 Rev 4 13/19 Package information STH410N4F7-2AG, STH410N4F7-6AG Table 9: H²PAK-6 package mechanical data mm Dim. Min. 14/19 Typ. Max. A 4.30 4.80 A1 0.03 0.20 C 1.17 1.37 e 2.34 2.74 e1 4.88 5.28 e2 7.42 7.82 E 0.45 0.60 F 0.50 0.70 H 10.00 H1 7.40 L 14.75 15.25 L1 1.27 1.40 L2 4.35 4.95 L3 6.85 7.25 L4 1.5 1.75 M 1.90 2.50 R 0.20 0.60 V 0° 8° DocID027734 Rev 4 - 10.40 7.80 STH410N4F7-2AG, STH410N4F7-6AG Package information Figure 22: H²PAK-6 recommended footprint Dimensions are in mm. DocID027734 Rev 4 15/19 Package information 4.3 STH410N4F7-2AG, STH410N4F7-6AG H²PAK packing information Figure 23: Tape outline Figure 24: Reel outline T REE L DIMENS IONS 40 mm min. Acc ess hole At slot location B D C N A Tape slot In core for Full radius At hub Tape start 16/19 G measured DocID027734 Rev 4 STH410N4F7-2AG, STH410N4F7-6AG Package information Table 10: Tape and reel mechanical data Tape Reel mm mm Dim. Dim. Min. Max. A0 10.5 10.7 A B0 15.7 15.9 B 1.5 D 1.5 1.6 C 12.8 D1 1.59 1.61 D 20.2 E 1.65 1.85 G 24.4 F 11.4 11.6 N 100 K0 4.8 5.0 T P0 3.9 4.1 P1 11.9 12.1 Base quantity 1000 P2 1.9 2.1 Bulk quantity 1000 R 50 T 0.25 0.35 W 23.7 24.3 DocID027734 Rev 4 Min. Max. 330 13.2 26.4 30.4 17/19 Revision history 5 STH410N4F7-2AG, STH410N4F7-6AG Revision history Table 11: Document revision history 18/19 Date Revision Changes 10-Apr-2015 1 First release. 13-May-2015 2 Updated Static. 04-Dec-2015 3 Updated note 1 in Table 2: "Absolute maximum ratings", Figure 2: "Safe operating area" and Figure 3: "Thermal impedance". 17-Feb-2016 4 Modified: Table 2: "Absolute maximum ratings", Table 4: "Static" Modified: Figure 2: "Safe operating area" Minor text changes DocID027734 Rev 4 STH410N4F7-2AG, STH410N4F7-6AG IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2016 STMicroelectronics – All rights reserved DocID027734 Rev 4 19/19