STP110N55F6

STP110N55F6 N-channel 55 V, 4.5 Ω typ., 110 A STripFET™ F6 Power MOSFET in a TO-220 package Datasheet - production data Features TAB Order code VDS RDS(on) max. ID STP110N55F6 55 V 5.2 mΩ 110 A • Low gate charge • Very low on-resistance 3 1 2 • High avalanche ruggedness TO-220 Applications • Switching applications Figure 1. Internal schematic diagram Description This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits a very low RDS(on) in all packages. '7$% * 6 $0Y Table 1. Device summary Order code Marking Packages Packaging STP110N55F6 110N55F6 TO-220 Tube July 2014 This is information on a product in full production. DocID019059 Rev 2 1/13 www.st.com Contents STP110N55F6 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 .............................................. 8 DocID019059 Rev 2 STP110N55F6 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 55 V VGS Gate-source voltage ± 20 V ID Drain current (continuous) at TC = 25 °C 110 A ID Drain current (continuous) at TC = 100 °C 85 A Drain current (pulsed) 440 A Total dissipation at TC = 25 °C 150 W 1 W/°C - 55 to 175 °C Value Unit 1 °C/W 62.5 °C/W IDM (1) PTOT Derating factor Tstg Tj Storage temperature Operating junction temperature 1. Current limited by package. Table 3. Thermal data Symbol Parameter Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max DocID019059 Rev 2 3/13 13 Electrical characteristics 2 STP110N55F6 Electrical characteristics (TCASE = 25 °C unless otherwise specified) Table 4. On/off states Symbol V(BR)DSS Parameter Test conditions Drain-source breakdown voltage VGS = 0, ID = 250 µA Min. Typ. Max. 55 Unit V VGS = 0, VDS = 55 V 1 µA VGS = 0, VDS = 55 V, TC=125 °C 100 µA 100 nA 4 V 4.5 5.2 mΩ Min. Typ. Max. Unit - 7390 - pF - 504 - pF - 355 - pF - 126 - nC - 32 - nC - 38 - nC Min. Typ. Max. Unit - 23 - ns - 65 - ns - 503 - ns - 237 - ns IDSS Zero gate voltage Drain current IGSS Gate-body leakage current VDS = 0, VGS = ± 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on- resistance VGS = 10 V, ID = 60 A 2 Table 5. Dynamic Symbol Parameter Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge Test conditions VGS = 0, VDS = 25 V, f = 1 MHz VDD = 44 V, ID = 110 A, VGS = 10 V (see Figure 14) Table 6. Switching times Symbol td(on) tr td(off) tf 4/13 Parameter Test conditions Turn-on delay time Rise time Turn-off-delay time VDD = 27.5 V, ID = 55 A RG = 4.7 Ω VGS = 10 V (see Figure 13) Fall time DocID019059 Rev 2 STP110N55F6 Electrical characteristics Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max Unit Source-drain current - 110 A ISDM (1) Source-drain current (pulsed) - 440 A VSD (2) Forward on voltage ISD = 110 A, VGS = 0 - 1.5 V trr Reverse recovery time - 44 ns Qrr Reverse recovery charge - 82 nC IRRM Reverse recovery current ISD = 110 A, VDD = 44 V di/dt = 100 A/µs, Tj = 150 °C (see Figure 15) - 3.8 A ISD 1. Current limited by package. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% DocID019059 Rev 2 5/13 13 Electrical characteristics 2.1 STP110N55F6 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance *,3*6$ ,' $ *,3*6$ . į  V DL H DU RQ 6 KLV QW [5' L  D LRQ UDW E\P H 2S LWHG /LP   —V PV  PV        6LQJOHSXOVH  7M ƒ& 7F ƒ& 6LQJOHSXOVH    9'69  Figure 4. Output characteristics 9*6 9 9   9          9      9'69 Figure 6. Gate charge vs gate-source voltage AM15580v1 VGS (V) 12      WSV *,3*6$ 9'6 9  9    ,' $    Figure 5. Transfer characteristics *,3*6$ ,' $    VDD=44V ID=110A            9*69 Figure 7. Static drain-source on-resistance *,3*6$ 5'6RQ Pȍ  9*6 9  10  8  6  4  2  0 0 6/13 50 100 150 Qg(nC)   DocID019059 Rev 2     ,'$ STP110N55F6 Electrical characteristics Figure 8. Capacitance variations Figure 9. Normalized gate threshold voltage vs temperature *,3*6$ & S) AM15583v1 VGS(th) (norm) ID=250µA 1.2   1 &LVV  0.8   0.6  0.4  0.2         &RVV &UVV 9'69 Figure 10. Normalized on-resistance vs temperature *,3*6$ 5'6RQ QRUP 9*6 9 0 -75 -50 -25 0 25 50 75 100 125 TJ(°C) Figure 11. Source-drain diode forward characteristics *,3*6$ 96' 9  7- ƒ&     7- ƒ&      7- ƒ&            7-ƒ&      ,6'$ Figure 12. Normalized V(BR)DSS vs temperature AM15585v1 V(BR)DSS (norm) 1.15 ID = 1mA 1.1 1.05 1 0.95 0.9 -75 -50 -25 0 25 50 75 100 125 TJ(°C) DocID019059 Rev 2 7/13 13 Test circuits 3 STP110N55F6 Test circuits Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit VDD 12V 47kΩ 1kΩ 100nF 3.3 μF 2200 RL μF IG=CONST VDD VGS 100Ω Vi=20V=VGMAX VD RG 2200 μF D.U.T. D.U.T. VG 2.7kΩ PW 47kΩ 1kΩ PW AM01468v1 Figure 15. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 16. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100μH S 3.3 μF B 25 Ω 1000 μF D VDD 2200 μF 3.3 μF VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform ton V(BR)DSS tdon VD toff tr tdoff tf 90% 90% IDM 10% ID VDD 10% 0 VDD VDS 90% VGS AM01472v1 8/13 0 DocID019059 Rev 2 10% AM01473v1 STP110N55F6 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. DocID019059 Rev 2 9/13 13 Package mechanical data STP110N55F6 Figure 19. TO-220 type A drawing BW\SH$B5HYB7 10/13 DocID019059 Rev 2 STP110N55F6 Package mechanical data Table 8. TO-220 type A mechanical data mm Dim. Min. Typ. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 øP 3.75 3.85 Q 2.65 2.95 DocID019059 Rev 2 11/13 13 Revision history 5 STP110N55F6 Revision history Table 9. Document revision history Date Revision 18-Jul-2011 1 First release. 2 – – – – – – – 11-Jul-2014 12/13 Changes Modified: title and Description Modified: ID (at TC = 100 °C) value in Table 2 Modified: RDS(on) typical value Modified: the entire typical values in Table 5, 6 and 7 Added: Section 2.1: Electrical characteristics (curves) Updated: Section 4: Package mechanical data Minor text changes DocID019059 Rev 2 STP110N55F6 IMPORTANT NOTICE – PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST’s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers’ products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document. © 2014 STMicroelectronics – All rights reserved DocID019059 Rev 2 13/13 13