STP36N55M5

STP36N55M5 STW36N55M5 N-channel 550 V, 0.06 Ω typ., 33 A MDmesh™ V Power MOSFET in TO-220 and TO-247 packages Datasheet — production data Features Order codes STP36N55M5 STW36N55M5 ■ VDSS @ TJmax RDS(on) max ID 600 V < 0.08 Ω 33 A TAB Worldwide best RDS(on) * area 3 ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching performance ■ 100% avalanche tested 1 2 2 3 1 TO-220 TO-247 Applications ■ Figure 1. Switching applications Internal schematic diagram Description $4!" These devices are N-channel MDmesh™ V Power MOSFETs based on an innovative proprietary vertical process technology, which is combined with STMicroelectronics’ well-known PowerMESH™ horizontal layout structure. The resulting product has extremely low onresistance, which is unmatched among siliconbased Power MOSFETs, making it especially suitable for applications which require superior power density and outstanding efficiency. Table 1. ' 3 !-V Device summary Order codes Marking Package STP36N55M5 TO-220 36N55M5 STW36N55M5 October 2012 This is information on a product in full production. Packaging Tube TO-247 Doc ID 022902 Rev 2 1/15 www.st.com 15 Contents STP36N55M5, STW36N55M5 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 2/15 .............................................. 9 Doc ID 022902 Rev 2 STP36N55M5, STW36N55M5 1 Electrical ratings Electrical ratings Table 2. Symbol VGS Absolute maximum ratings Parameter Gate-source voltage Value Unit ± 25 V ID Drain current (continuous) at TC = 25 °C 33 A ID Drain current (continuous) at TC = 100 °C 20.8 A IDM (1) Drain current (pulsed) 132 A PTOT Total dissipation at TC = 25 °C 190 W Peak diode recovery voltage slope 15 V/ns - 55 to 150 °C 150 °C dv/dt (1) Tstg Tj Storage temperature Max. operating junction temperature 1. ISD ≤ 33 A, di/dt ≤400 A/µs; VDS(Peak) < V(BR)DSS, VDD = 340 V. Table 3. Thermal data Value Symbol Parameter Unit TO-220 Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max Table 4. Symbol TO-247 0.66 62.5 °C/W 50 °C/W Avalanche characteristics Parameter IAR Avalanche current, repetetive or not repetetive (pulse width limited by Tjmax ) EAS Single pulse avalanche energy (starting TJ=25°C, ID= IAR; VDD=50 V) Doc ID 022902 Rev 2 Value Unit 7 A 510 mJ 3/15 Electrical characteristics 2 STP36N55M5, STW36N55M5 Electrical characteristics (TC = 25 °C unless otherwise specified) Table 5. Symbol V(BR)DSS On /off states Parameter Test conditions Drain-source breakdown voltage ID = 1 mA, VGS = 0 IDSS Zero gate voltage VDS = 550 V drain current (VGS = 0) VDS = 550 V, TC=125 °C IGSS Gate-body leakage current (VDS = 0) Gate threshold voltage VDS = VGS, ID = 250 µA RDS(on) Static drain-source on-resistance Symbol Ciss Coss Crss Co(tr)(1) Co(er) (2) Typ. Max. Unit 550 V 1 100 µA µA ± 100 nA 4 5 V 0.06 0.08 Ω Min. Typ. Max. Unit - 2670 75 6.6 - pF pF pF - 192 - pF - 71 - pF - 1.85 - Ω - 62 15 27 - nC nC nC VGS = ± 25 V VGS(th) Table 6. Min. 3 VGS = 10 V, ID = 16.5 A Dynamic Parameter Test conditions Input capacitance Output capacitance Reverse transfer capacitance VDS = 100 V, f = 1 MHz, VGS = 0 Equivalent capacitance time related VDS = 0 to 440 V, VGS = 0 Equivalent capacitance energy related RG Intrinsic gate resistance f = 1 MHz open drain Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 440 V, ID = 16.5 A, VGS = 10 V (see Figure 18) 1. Time related is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as Coss when VDS increases from 0 to 80% VDSS 4/15 Doc ID 022902 Rev 2 STP36N55M5, STW36N55M5 Table 7. Symbol td(V) tr(V) tf(i) tc(off) Table 8. Electrical characteristics Switching times Parameter Test conditions Voltage delay time Voltage rise time Current fall time Crossing time VDD = 400 V, ID = 22 A, RG = 4.7 Ω, VGS = 10 V (see Figure 19 and Figure 22) Parameter ISD ISDM (1) Source-drain current Source-drain current (pulsed) VSD (2) Forward on voltage IRRM trr Qrr IRRM Typ. - 56 13 13 17 Min. Typ. Max Unit - ns ns ns ns Source drain diode Symbol trr Qrr Min. Test conditions Max. Unit - 33 132 A A ISD = 33 A, VGS = 0 - 1.5 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/µs VDD = 100 V (see Figure 22) - 334 5 31 ns µC A Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 33 A, di/dt = 100 A/µs VDD = 100 V, Tj = 150 °C (see Figure 22) - 406 7 35 ns µC A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 µs, duty cycle 1.5% Doc ID 022902 Rev 2 5/15 Electrical characteristics STP36N55M5, STW36N55M5 2.1 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220 Figure 3. Thermal impedance for TO-220 Figure 5. Thermal impedance for TO-247 Figure 7. Transfer characteristics AM14928v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 is ea ) ar S(on is th RD x in n ma o ti y ra d b e e p O mit Li 10 10µs 100µs 1ms 10ms 1 0.1 0.1 Figure 4. 10 1 100 VDS(V) Safe operating area for TO-247 AM14929v1 ID (A) Tj=150°C Tc=25°C Single pulse 100 is ea ) ar S(on D t R in ax n io y m t b ra pe ed O mit i L s hi 10 10µs 100µs 1ms 10ms 1 0.1 0.1 Figure 6. 10 1 100 VDS(V) Output characteristics AM14930v1 ID (A) AM14931v1 ID (A) VGS=10V 70 VDS=25V 70 7V 60 60 50 50 40 40 30 30 6V 20 20 10 10 0 0 6/15 5 10 15 20 0 25 VDS(V) Doc ID 022902 Rev 2 3 4 5 6 7 8 9 VGS(V) STP36N55M5, STW36N55M5 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. AM14932v1 VDS(V) VGS (V) VDS VDD=440V ID=16.5A 12 450 400 10 Static drain-source on-resistance AM14933v1 RDS(on) (Ω) VGS=10V 0.065 350 300 8 0.06 250 6 200 0.055 150 4 100 2 0.05 50 0 0 10 20 30 40 50 60 0 70 Qg(nC) Figure 10. Capacitance variations 5 10 15 20 30 25 ID(A) Figure 11. Output capacitance stored energy AM14934v1 C (pF) 0.045 0 AM14935v1 Eoss (µJ) 10 10000 Ciss 8 1000 6 100 10 1 0.1 1 100 10 Coss 4 Crss 2 Figure 12. Normalized gate threshold voltage vs temperature AM05459v3 VGS(th) (norm) 1.10 0 0 VDS(V) ID=250µA 200 100 300 400 500 VDS(V) Figure 13. Normalized on-resistance vs temperature AM05460v3 RDS(on) (norm) 2.1 VGS=10V ID=16.5V 1.9 1.00 1.7 1.5 1.3 0.90 1.1 0.9 0.80 0.7 0.70 -50 -25 0 25 50 75 100 TJ(°C) 0.5 -50 -25 Doc ID 022902 Rev 2 0 25 50 75 100 TJ(°C) 7/15 Electrical characteristics STP36N55M5, STW36N55M5 Figure 14. Source-drain diode forward characteristics Figure 15. Normalized BVDSS vs temperature AM05461v3 VSD (V) AM10399v1 VDS (norm) TJ=-50°C 1.08 1.2 ID = 1mA 1.06 1.0 1.04 0.8 1.02 TJ=25°C 1.00 0.6 TJ=150°C 0.98 0.4 0.96 0.2 0 0.94 0 10 30 20 40 50 ISD(A) 0.92 -50 -25 Figure 16. Switching losses vs gate resistance (1) E (μJ) 600 AM14936v1 ID=22A VDD=400V VGS=10V Eon 500 400 300 Eoff 200 100 0 0 10 20 30 40 RG(Ω) 1. Eon including reverse recovery of a SiC diode 8/15 Doc ID 022902 Rev 2 0 25 50 75 100 TJ(°C) STP36N55M5, STW36N55M5 3 Test circuits Test circuits Figure 17. Switching times test circuit for resistive load Figure 18. Gate charge test circuit 6$$ 6 K K N&  &  2, & 6'3 )'#/.34 6$$  6I66'-!8 6$ 2'  & $54 $54 6' K 07 K K 07 !-V !-V Figure 19. Test circuit for inductive load Figure 20. Unclamped inductive load test switching and diode recovery times circuit ! ! $54 &!34 $)/$% " " , ! $ ' 3 6$ , (  & "   & $ 6$$  &  & 6$$ )$ ' 2' 3 6I $54 0W !-V Figure 21. Unclamped inductive waveform 6"2 $33 !-V Figure 22. Switching time waveform Concept waveform for Inductive Load Turn-off Id 6$ 90%Vds 90%Id Tdelay-off -off )$Vgs 90%Vgs on )$ Vgs(I(t)) )) 6$$ 6$$ 10%Id 10%Vds Vds Trise !-V Doc ID 022902 Rev 2 Tfall Tcross --over AM05540v2 9/15 Package mechanical data 4 STP36N55M5, STW36N55M5 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK® packages, depending on their level of environmental compliance. ECOPACK® specifications, grade definitions and product status are available at: www.st.com. ECOPACK is an ST trademark. Table 9. TO-220 type A mechanical data mm Dim. Min. Max. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 10/15 Typ. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 ∅P 3.75 3.85 Q 2.65 2.95 Doc ID 022902 Rev 2 STP36N55M5, STW36N55M5 Package mechanical data Figure 23. TO-220 type A drawing 0015988_typeA_Rev_S Doc ID 022902 Rev 2 11/15 Package mechanical data Table 10. STP36N55M5, STW36N55M5 TO-247 mechanical data mm. Dim. Min. Max. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 L2 12/15 Typ. 5.45 5.60 18.50 ∅P 3.55 3.65 ∅R 4.50 5.50 S 5.30 Doc ID 022902 Rev 2 5.50 5.70 STP36N55M5, STW36N55M5 Package mechanical data Figure 24. TO-247 drawing 0075325_G Doc ID 022902 Rev 2 13/15 Revision history 5 STP36N55M5, STW36N55M5 Revision history Table 11. 14/15 Document revision history Date Revision Changes 07-Mar-2012 1 First release. 23-Oct-2012 2 Document status promoted from preliminary data to production data. Doc ID 022902 Rev 2 STP36N55M5, STW36N55M5 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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