STP185N55F3

STB185N55F3 STP185N55F3 N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET Features Type VDSS STB185N55F3 STP185N55F3 RDS(on) 55V 55V 3.5mΩ 3.8mΩ ID Pw (1) 330W (1) 330W 120A 120A 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested 3 1 TO-220 2 3 1 D2PAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size™” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low on resistance, rugged avalanche characteristics and low gate charge. Figure 1. Internal schematic diagram Applications ■ Switching applications – Automotive Table 1. Device summary Order codes Marking Package Packaging STB185N55F3 185N55F3 D2PAK Tape & reel STP185N55F3 185N55F3 TO-220 Tube June 2007 Rev 2 1/14 www.st.com 14 Contents STB185N55F3 - STP185N55F3 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................. 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 ................................................ 8 STB185N55F3 - STP185N55F3 1 Electrical ratings Electrical ratings Table 1. Symbol Absolute maximum ratings Parameter Value Unit 55 V VDS Drain-source voltage (VGS=0) VGS Gate-source voltage ± 20 V ID (1) Drain current (continuous) at TC = 25°C 120 A ID (1) Drain current (continuous) at TC=100°C 120 A IDM (2) Drain current (pulsed) 480 A PTOT Total dissipation at TC = 25°C 330 W Derating factor 2.2 W/°C dv/dt (3) Peak diode recovery voltage slope 10 V/ns EAS (4) Single pulse avalanche energy 1000 mJ Tj Operating junction temperature storage temperature -55 To 175 °C Tstg 1. Current limited by package. 2. Pulse width limited by safe operating area. 3. ISD < 120A, di/dt < 900A/µs, VDD < V(BR)DSS, TJ < TJMAX 4. Starting Tj=25°C, Id=60A, Vdd=40V (see Figure 16 and Figure 17) Table 2. Thermal data TO-220 Rthj-case Thermal resistance junction-case D²PAK 0.45 Unit °C/W Rthj-a Thermal resistance junction-ambient max 62.5 -- °C/W Rthj-pcb(1) Thermal resistance junction-ambient max -- 50 °C/W Tl Maximum lead temperature for soldering purpose 300 °C 1. When mounted on 1 inch² FR4 2oz Cu. 3/14 Electrical characteristics 2 STB185N55F3 - STP185N55F3 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 3. Symbol On/off states Parameter Test conditions Drain-source breakdown voltage ID = 250µA, VGS= 0 IDSS Zero gate voltage drain current (VGS = 0) VDS= max rating, VDS= max rating,@125°C IGSS Gate body leakage current VGS = ±20V (VDS = 0) V(BR)DSS VGS(th) Gate threshold voltage VDS= VGS, ID = 250µA RDS(on) Static drain-source on resistance VGS= 10V, ID= 60A D²PAK TO-220 Table 4. Symbol Typ. Max. 55 Unit V 10 100 µA µA ±200 nA 4 V 2.9 3.2 3.5 3.8 mΩ mΩ Typ. Max. Unit 2 Dynamic Parameter Test conditions Min. gfs (1) Forward transconductance VDS = 15V , ID = 60A 150 S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25V, f = 1MHz, VGS = 0 6800 1450 15 pF pF pF td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 27.5V, ID = 60A RG = 4.7Ω VGS = 10V (see Figure 13, Figure 18) 25 150 110 50 ns ns ns ns Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 44V, ID = 120A, VGS = 10V, (see Figure 14) 100 30 26 nC nC nC 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. 4/14 Min. STB185N55F3 - STP185N55F3 Table 5. Symbol Electrical characteristics Source drain diode Parameter ISDM(1) Source-drain current Source-drain current (pulsed) VSD(2) Forward on voltage ISD trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current Test conditions Min. Typ. ISD=120A, VGS=0 ISD=120A, di/dt = 100A/µs, VDD=35V, Tj=150°C (see Figure 15) 60 0.11 3.5 Max. Unit 120 480 A A 1.5 V ns µC A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300µs, duty cycle 1.5% 5/14 Electrical characteristics STB185N55F3 - STP185N55F3 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/14 STB185N55F3 - STP185N55F3 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Figure 10. Normalized gate threshold voltage vs temperature Capacitance variations Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuit 3 STB185N55F3 - STP185N55F3 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/14 Figure 18. Switching time waveform STB185N55F3 - STP185N55F3 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB185N55F3 - STP185N55F3 D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. inch DIM. MIN. TYP MAX. MIN. TYP. MAX. A 4.4 4.6 0.173 0.181 A1 2.49 2.69 0.098 0.106 A2 0.03 0.23 0.001 0.009 B 0.7 0.93 0.027 0.036 B2 1.14 1.7 0.044 0.067 C 0.45 0.6 0.017 0.023 C2 1.23 1.36 0.048 0.053 D 8.95 9.35 0.352 D1 E 8 10 E1 0.368 0.315 10.4 0.393 8.5 0.334 G 4.88 5.28 0.192 0.208 L 15 15.85 0.590 0.625 L2 1.27 1.4 0.050 0.055 L3 1.4 1.75 0.055 0.068 M 2.4 3.2 0.094 0.126 R 0º 0.015 4º 3 V2 0.4 1 10/14 STB185N55F3 - STP185N55F3 Package mechanical data TO-220 mechanical data mm inch Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 ∅P Q Typ 4.40 0.61 1.14 0.49 15.25 Max Min 4.60 0.88 1.70 0.70 15.75 0.173 0.024 0.044 0.019 0.6 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 Max 0.181 0.034 0.066 0.027 0.62 0.050 16.40 28.90 3.75 2.65 Typ 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 3.85 2.95 0.147 0.104 0.151 0.116 11/14 Packaging mechanical data 5 STB185N55F3 - STP185N55F3 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. mm MIN. A B 1.5 C 12.8 D 20.2 G 24.4 N 100 T TAPE MECHANICAL DATA DIM. mm MIN. MAX. MIN. A0 10.5 10.7 0.413 0.421 B0 15.7 15.9 0.618 0.626 D 1.5 1.6 0.059 0.063 D1 1.59 1.61 0.062 0.063 E 1.65 1.85 0.065 0.073 F 11.4 11.6 0.449 0.456 K0 4.8 5.0 0.189 0.197 P0 3.9 4.1 0.153 0.161 P1 11.9 12.1 0.468 0.476 P2 1.9 2.1 0.075 0.082 MAX. R 50 1.574 T 0.25 0.35 0.0098 0.0137 W 23.7 24.3 * on sales type 12/14 inch 0.933 0.956 inch MAX. MIN. MAX. 330 12.992 13.2 0.504 0.520 26.4 0.960 1.039 0.059 0795 3.937 30.4 1.197 BASE QTY BULK QTY 1000 1000 STB185N55F3 - STP185N55F3 6 Revision history Revision history Table 6. Revision history Date Revision Changes 31-Jan-2007 1 First version 28-Jun-2007 2 Complete version 13/14 STB185N55F3 - STP185N55F3 Please Read Carefully: Information in this document is provided solely in connection with ST products. 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